Abstract: An alternating current (AC) light emitting assembly and an AC light emitting device are disclosed. The AC light emitting assembly includes a substrate; a rectifier unit comprising a plurality of rectifier components arranged in a Wheatstone Bridge, for rectifying an AC signal into a direct current (DC) signal, each of the rectifier components having a high breakdown voltage and a low forward voltage; a light emitting unit electrically connected to the rectifier unit and comprising a plurality of light emitting components formed on the substrate, for emitting light when receiving the DC signal outputted by the rectifier unit; and two conductive electrodes electrically connected to the rectifier unit for receiving and transmitting the AC signal to the rectifier unit. The AC light emitting device includes two stacked and electrically connected AC light emitting assemblies.

Abstract: A light-emitting device comprises a substrate, at least one light-emitting structure configured to emit light beams and positioned on the substrate, and a ring-shaped photonic crystal structure positioned in the light-emitting structure. The ring-shaped photonic crystal structure includes a plurality of pillars positioned in the light-emitting structure and a plurality of ring-shaped openings surrounding the pillars. The distance between the ring-shaped openings is preferably between 0.2? and 10?, and ? represents the wavelength of the light beam.

Abstract: The EM polarizing structure contains a two dimensional planar variation structure, having medium nodes regularly distributed as a two dimensional planar photonic unit lattice cell array on a plane. Each of the photonic unit lattice cells has an operation axis and is identical at each lattice point, which passes a diagonal of photonic unit lattice cell. The medium nodes within each planar photonic unit lattice cell are distributed asymmetrical with respect to the operation axis direction and identical at each lattice point. The EM polarizing structure is used to modulate an input EM wave around an operation frequency of the photonic band associated with the EM wave polarizing structure. Thus a corresponding output EM wave becomes polarized. Moreover, the EM wave polarizing structure can be integrated with an EM wave emitting source. Thus an output EM wave from the device is polarized.

Abstract: A light emitting apparatus at least includes a light emitting device, a connecting wire structure, and a space-occupation body. The light emitting device is disposed in the space-occupation body, electrically coupled with the connecting wire structure, and emits a first-frequency-range light under a suitable driving voltage. A light emitting surface of the light emitting device structure is covered by a first anti-reflection layer with respect to the first-frequency-range light. A packaging material is filled into the space-occupation body. The packaging material at least includes a luminescent material. The luminescent material is excited by the first-frequency-range light, so as to generate at least a second-frequency-range light.

Abstract: The EM polarizing structure, which contains a two dimensional planar variation structure, having medium nodes regularly distributed as a two dimensional planar photonic unit lattice cell array on a plane. Each of said unit photonic lattice cells has an operation axis and is identical at each lattice point, which passes a diagonal of said unit photonic lattice cell. The medium nodes within each said planar photonic unit lattice cell are distributed asymmetrical with respect to said operation axis direction and identical at each lattice point. The said EM polarizing structure is used to modulate an input EM wave around an operation frequency of the photonic band associated with said EM wave polarizing structure. Thus a corresponding output EM wave becomes polarized. Moreover, said electromagnetic (EM) wave polarizing structure can be integrated with an EM wave emitting source. Thus an output EM) wave from said device is polarized.

Abstract: A light-emitting device comprises a substrate, at least one light-emitting structure configured to emit light beams and positioned on the substrate, and a ring-shaped photonic crystal structure positioned in the light-emitting structure. The ring-shaped photonic crystal structure includes a plurality of pillars positioned in the light-emitting structure and a plurality of ring-shaped openings surrounding the pillars. The distance between the ring-shaped openings is preferably between 0.2? and 10?, and ? represents the wavelength of the light beam.

Abstract: A light-emitting device of high light extraction efficiency comprises a first substrate, a light-emitting chip positioned on the first substrate and configured to emit light beams, a fluorescent material positioned on the light-emitting chip, a photonic crystal positioned on the fluorescent material and a reflector positioned on the photonic crystal and configured to reflect the light beam to the fluorescent material. The first substrate is preferably a metallic cup, and the light-emitting chip is positioned at the bottom of the metallic cup. The photonic crystal includes a second substrate and a plurality of protrusions positioned on the second substrate. Each of the protrusions includes a bottom end positioned on the second substrate and a tip portion smaller than the bottom end. The plurality of protrusions can be triangular pillars, semicircular pillars, sinusoid pillars, pyramids, or cones.

Abstract: A light emitting diode (LED). The LED comprises a LED chip comprising an n-type semiconductor layer, a active layer and a p-type semiconductor layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode electrically contact the n-type semiconductor layer and the p-type semiconductor layer respectively. An AlGaInN thick film is on the LED chip, and the AlGaInN thick film has an oblique side and a textured top surface.

Abstract: A light emitting apparatus includes at least including a light emitting device structure, a connecting wire structure, and a space-occupation body. The light emitting device structure is disposed in the space-occupation body, electrically coupled with the connecting wire structure, and emits a first-frequency-range light under a suitable driving voltage. A light emitting surface of the light emitting device structure is covered by a first anti-reflection layer with respect to the first-frequency-range light. A packaging material is filled into the space-occupation body. The packaging material at least includes a luminescent material. The luminescent material is excited by the first-frequency-range light, so as to generate at least a second-frequency-range light.

Abstract: A light-emitting device includes a substrate, a semiconductor stacked structure positioned on the substrate, a transparent electrode positioned on a first region of the semiconductor stacked structure, and at least one photonic crystal positioned in a second region of the semiconductor stacked structure. Preferably, the first region surrounds the second region, the area of the first region is larger than that of the second region, and the width of the second region is smaller than 40 micrometers. The structure of photonic crystals can be holes, pillars, continuous protrusions or depressions, discontinuous protrusions or depressions or the combination thereof, and the lattice of photonic crystals can be square, hexagonal, rectangular, periodic, multi-periodic, quasi-periodic or non-periodic.

Abstract: A light-emitting device of high light extraction efficiency comprises a first substrate, a light-emitting chip positioned on the first substrate and configured to emit light beams, a fluorescent material positioned on the light-emitting chip, a photonic crystal positioned on the fluorescent material and a reflector positioned on the photonic crystal and configured to reflect the light beam to the fluorescent material. The first substrate is preferably a metallic cup, and the light-emitting chip is positioned at the bottom of the metallic cup. The photonic crystal includes a second substrate and a plurality of protrusions positioned on the second substrate. Each of the protrusions includes a bottom end positioned on the second substrate and a tip portion smaller than the bottom end. The plurality of protrusions can be triangular pillars, semicircular pillars, sinusoid pillars, pyramids, or cones.

Abstract: An alternating current (AC) light emitting assembly and an AC light emitting device are disclosed. The AC light emitting assembly includes a substrate; a rectifier unit comprising a plurality of rectifier components arranged in a Wheatstone Bridge, for rectifying an AC signal into a direct current (DC) signal, each of the rectifier components having a high breakdown voltage and a low forward voltage; a light emitting unit electrically connected to the rectifier unit and comprising a plurality of light emitting components formed on the substrate, for emitting light when receiving the DC signal outputted by the rectifier unit; and two conductive electrodes electrically connected to the rectifier unit for receiving and transmitting the AC signal to the rectifier unit. The AC light emitting device includes two stacked and electrically connected AC light emitting assemblies.

Abstract: A light emitting diode (LED). The LED comprises a LED chip comprising an n-type semiconductor layer, a active layer and a p-type semiconductor layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode electrically contact the n-type semiconductor layer and the p-type semiconductor layer respectively. An AlGaInN thick film is on the LED chip, and the AlGaInN thick film has an oblique side and a textured top surface.

Abstract: A white-light LED with omni-directional reflectors includes an LED chip for emitting white-light. A light transmitting material surrounding the LED and phosphor grains is dispersed in order to excite fluorescence via emission of LED. Two omni-directional reflectors are implemented on the top and/or bottom of the LED symmetrically surrounding the light transmitting material and the LED chip. The light from the LED was reflected omni-directionally, via the dielectric omni-directional reflectors, to increasing the efficiency and/or spectral characteristics and uniformity of the visible light emission.

Abstract: A white-light LED with omni-directional reflectors includes an LED chip for emitting white-light. A light transmitting material surrounding the LED and phosphor grains is dispersed in order to excite fluorescence via emission of LED. Two omni-directional reflectors are implemented on the top and/or bottom of the LED symmetrically surrounding the light transmitting material and the LED chip. The light from the LED was reflected omni-directionally, via the dielectric omni-directional reflectors, to increasing the efficiency and/or spectral characteristics and uniformity of the visible light emission.

Abstract: This specification discloses a VCSEL (Vertical Cavity Surface-Emitting Laser) device with single-mode output. This device is given by coating a layer of antireflection-coating (AR-coating) film on a normal VCSEL device with multiple transverse mode output and forming a light-emitting window on the AR-coating film. Since the AR-coating film can lower the reflectivity of the VCSEL device with multiple transverse mode output and the Bragg reflector at the bottom of the AR-coating film, it is easier to form single-mode laser light when the current flows through areas not covered by the AR-coating film, outputting a single-mode laser beam. Through the power-current character curve and the spectrum properties, one can find an optimal electrical current value for controlling single-mode light output.

Abstract: A substrate, preferably silicon, or other suitable material has a layer of glass material disposed thereon. The glass material of the present disclosure has a substantially increased uniformity due to the reduction in bubbles as well as a relatively smooth top surface. By virtue of the reduction in the number and size of the bubbles in the glass the dielectric properties of the glass are more uniform. Additionally, the fact that the surface of the glass is much more smooth reduces the potential of prior structures to have an unacceptably thin glass layer due to the need to grind the surface smooth.

Abstract: A method of forming a glass layer on a substrate of material, for example, silicon, with the glass layer having a coefficient of thermal expansion which substantially matches the substrate. A slurry comprising glass powder and a solvent is applied to the substrate, as for example, by pouring, and a multi-step heating process is carried out with over-pressures of a highly diffusive gas such as hydrogen first, followed by a non-diffusive gas such as nitrogen to thereby create a glass layer having reduced bubbles and fewer bubbles than has heretofore been achieved.

Abstract: Method of producing a silicon structure for fabricating integrated circuit devices therein by forming a plurality of regions of N-type single crystal silicon of high resistivity inset in the surface of silicon of either P-type conductivity or of N-type conductivity of low resistivity. The silicon contiguous with the regions of high resistivity N-type silicon is converted to porous silicon by anodically treating in an aqueous solution of HF. Then, conductivity type imparting material is diffused through the porous silicon into portions of the regions of N-type conductivity to alter their electrical characteristics to P-type or to low resistivity N-type. The porous silicon is then oxidized to silicon oxide, electrically isolating each of the N-type regions and its associated portion.

Abstract: Submicron silicon structures are fabricated by repeat oxidation and stripping the walls of a U-groove leaving thin silicon fingers.This method may be used to fabricate a silicon transistor having an emitter and a collector separated by a channel. The channel is formed in a silicon finger by a Schottky base, which at zero bias pinches off conduction of the channel. A bias voltage on the Schottky base causes conduction. The channel has a very short length making the transistor capable of high frequency operation.