Abstract: Disclosed herein is a video search device comprising: at least one processor configured to implement an updating unit generating event object information based on feature information on an object detected in a video; and a storage configured to store comparison object information containing feature information on a reference object, wherein the processor is further configured to implement: an object information generating/deleting unit configured to create information on an object having a predetermined degree of similarity between the event object information and the comparison object information as final object information, and storing the final object information in the storage; and a data searching unit searching the final object information for data that satisfies a search criterion entered by a user.

Abstract: Provided is a method of treating an exhaust gas including preparing a rotor provided with a zeolite-carbon composite therein, providing a mixed gas including an organic gas and an alkali gas in the rotor, adsorbing the organic gas and the alkali gas to the zeolite-carbon composite, and desorbing the organic gas and the alkali gas from the zeolite-carbon composite, and the zeolite-carbon composite includes a zeolite and a carbon layer on the zeolite.

Abstract: The present disclosure relates to an impregnation evaluation device for evaluating impregnation of an electrode plate by an electrolyte. To this end, an impregnation evaluation device includes a processor configured to calculate a theoretical mass of an electrode plate, and a mass measuring unit configured to measure an actual mass of the electrode plate, wherein the processor is configured to evaluate the impregnation of the electrode plate by comparing the theoretical mass with the actual mass.

Abstract: Provided is a method of treating an exhaust gas including preparing a rotor provided with a zeolite-carbon composite therein, providing a mixed gas including an organic gas and an alkali gas in the rotor, adsorbing the organic gas and the alkali gas to the zeolite-carbon composite, and desorbing the organic gas and the alkali gas from the zeolite-carbon composite, and the zeolite-carbon composite includes a zeolite and a carbon layer on the zeolite.

Abstract: Disclosed herein is a video search device comprising: at least one processor configured to implement an updating unit generating event object information based on feature information on an object detected in a video; and a storage configured to store comparison object information containing feature information on a reference object, wherein the processor is further configured to implement: an object information generating/deleting unit configured to create information on an object having a predetermined degree of similarity between the event object information and the comparison object information as final object information, and storing the final object information in the storage; and a data searching unit searching the final object information for data that satisfies a search criterion entered by a user.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device includes forming a first gate insulating film on a substrate for a first device, forming a first gate electrode on the first gate insulating film; forming a mask pattern on the first gate electrode to expose opposing end portions of the first gate electrode, wherein a length of the mask pattern is smaller than a length of the first gate electrode; performing ion implantation through the exposed opposing end portions of the first gate electrode using the mask pattern to simultaneously form first and second drift regions in the substrate; forming spacers on sidewalls of the first gate electrode, respectively; and forming a first source region and a first drain region in the first and second drift regions, respectively.

Abstract: A semiconductor device includes a first junction-gate field-effect transistor (JFET) having a first pinch-off voltage, and a second JFET having a second pinch-off voltage higher than the first pinch-off voltage. The first JFET includes a first top gate region disposed on a surface of a substrate, a first channel region surrounding the first top gate region, and a first bottom gate region disposed under the first channel region. The second JFET includes a second top gate region disposed on the surface and having a same depth with the first top gate region relative to the surface, a second channel region surrounding the second top gate region and disposed deeper than the first channel region relative to the surface, and a second bottom gate region disposed under the second channel region and being deeper than the first bottom gate region relative to the surface.

Abstract: A semiconductor device includes a first junction-gate field-effect transistor (JFET) having a first pinch-off voltage, and a second JFET having a second pinch-off voltage higher than the first pinch-off voltage. The first JFET includes a first top gate region disposed on a surface of a substrate, a first channel region surrounding the first top gate region, and a first bottom gate region disposed under the first channel region. The second JFET includes a second top gate region disposed on the surface and having a same depth with the first top gate region relative to the surface, a second channel region surrounding the second top gate region and disposed deeper than the first channel region relative to the surface, and a second bottom gate region disposed under the second channel region and being deeper than the first bottom gate region relative to the surface.

Abstract: A semiconductor device includes a first junction-gate field-effect transistor (JFET) having a first pinch-off voltage, and a second JFET having a second pinch-off voltage higher than the first pinch-off voltage. The first JFET includes a first top gate region disposed on a surface of a substrate, a first channel region surrounding the first top gate region, and a first bottom gate region disposed under the first channel region. The second JFET includes a second top gate region disposed on the surface and having a same depth with the first top gate region relative to the surface, a second channel region surrounding the second top gate region and disposed deeper than the first channel region relative to the surface, and a second bottom gate region disposed under the second channel region and being deeper than the first bottom gate region relative to the surface.

Abstract: Provided is a method of treating an exhaust gas including preparing a rotor provided with a zeolite-carbon composite therein, providing a mixed gas including an organic gas and an alkali gas in the rotor, adsorbing the organic gas and the alkali gas to the zeolite-carbon composite, and desorbing the organic gas and the alkali gas from the zeolite-carbon composite, and the zeolite-carbon composite includes a zeolite and a carbon layer on the zeolite.

Abstract: Disclosed herein is a video search device comprising: at least one processor configured to implement an updating unit generating event object information based on feature information on an object detected in a video; and a storage configured to store comparison object information containing feature information on a reference object, wherein the processor is further configured to implement: an object information generating/deleting unit configured to create information on an object having a predetermined degree of similarity between the event object information and the comparison object information as final object information, and storing the final object information in the storage; and a data searching unit searching the final object information for data that satisfies a search criterion entered by a user.

Abstract: A semiconductor device includes a first junction-gate field-effect transistor (JFET) having a first pinch-off voltage, and a second JFET having a second pinch-off voltage higher than the first pinch-off voltage. The first JFET includes a first top gate region disposed on a surface of a substrate, a first channel region surrounding the first top gate region, and a first bottom gate region disposed under the first channel region. The second JFET includes a second top gate region disposed on the surface and having a same depth with the first top gate region relative to the surface, a second channel region surrounding the second top gate region and disposed deeper than the first channel region relative to the surface, and a second bottom gate region disposed under the second channel region and being deeper than the first bottom gate region relative to the surface.

Abstract: Disclosed herein is a video search device comprising: at least one processor configured to implement an updating unit generating event object information based on feature information on an object detected in a video; and a storage configured to store comparison object information containing feature information on a reference object, wherein the processor is further configured to implement: an object information generating/deleting unit configured to create information on an object having a predetermined degree of similarity between the event object information and the comparison object information as final object information, and storing the final object information in the storage; and a data searching unit searching the final object information for data that satisfies a search criterion entered by a user.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device includes forming a first gate insulating film on a substrate for a first device, forming a first gate electrode on the first gate insulating film; forming a mask pattern on the first gate electrode to expose opposing end portions of the first gate electrode, wherein a length of the mask pattern is smaller than a length of the first gate electrode; performing ion implantation through the exposed opposing end portions of the first gate electrode using the mask pattern to simultaneously form first and second drift regions in the substrate; forming spacers on sidewalls of the first gate electrode, respectively; and forming a first source region and a first drain region in the first and second drift regions, respectively.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device includes forming a first gate insulating film on a substrate for a first device, forming a first gate electrode on the first gate insulating film; forming a mask pattern on the first gate electrode to expose opposing end portions of the first gate electrode, wherein a length of the mask pattern is smaller than a length of the first gate electrode; performing ion implantation through the exposed opposing end portions of the first gate electrode using the mask pattern to simultaneously form first and second drift regions in the substrate; forming spacers on sidewalls of the first gate electrode, respectively; and forming a first source region and a first drain region in the first and second drift regions, respectively.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device includes forming a first gate insulating film on a substrate for a first device, forming a first gate electrode on the first gate insulating film; forming a mask pattern on the first gate electrode to expose opposing end portions of the first gate electrode, wherein a length of the mask pattern is smaller than a length of the first gate electrode; performing ion implantation through the exposed opposing end portions of the first gate electrode using the mask pattern to simultaneously form first and second drift regions in the substrate; forming spacers on sidewalls of the first gate electrode, respectively; and forming a first source region and a first drain region in the first and second drift regions, respectively.

Abstract: Disclosed herein is a video search device comprising: at least one processor configured to implement an updating unit generating event object information based on feature information on an object detected in a video; and a storage configured to store comparison object information containing feature information on a reference object, wherein the processor is further configured to implement: an object information generating/deleting unit configured to create information on an object having a predetermined degree of similarity between the event object information and the comparison object information as final object information, and storing the final object information in the storage; and a data searching unit searching the final object information for data that satisfies a search criterion entered by a user.

Abstract: A cathode for an all solid-state lithium sulfur battery includes a porous conductive material, which is manufactured from a precursor containing sulfur, and contains the sulfur in a backbone and a sulfur active material, which is injected into pores of the porous conductive material.