Abstract: The present disclosure provides a method of manufacturing a semiconductor device includes forming a first gate insulating film on a substrate for a first device, forming a first gate electrode on the first gate insulating film; forming a mask pattern on the first gate electrode to expose opposing end portions of the first gate electrode, wherein a length of the mask pattern is smaller than a length of the first gate electrode; performing ion implantation through the exposed opposing end portions of the first gate electrode using the mask pattern to simultaneously form first and second drift regions in the substrate; forming spacers on sidewalls of the first gate electrode, respectively; and forming a first source region and a first drain region in the first and second drift regions, respectively.

Abstract: A semiconductor device includes a first junction-gate field-effect transistor (JFET) having a first pinch-off voltage, and a second JFET having a second pinch-off voltage higher than the first pinch-off voltage. The first JFET includes a first top gate region disposed on a surface of a substrate, a first channel region surrounding the first top gate region, and a first bottom gate region disposed under the first channel region. The second JFET includes a second top gate region disposed on the surface and having a same depth with the first top gate region relative to the surface, a second channel region surrounding the second top gate region and disposed deeper than the first channel region relative to the surface, and a second bottom gate region disposed under the second channel region and being deeper than the first bottom gate region relative to the surface.

Abstract: A semiconductor device includes a first junction-gate field-effect transistor (JFET) having a first pinch-off voltage, and a second JFET having a second pinch-off voltage higher than the first pinch-off voltage. The first JFET includes a first top gate region disposed on a surface of a substrate, a first channel region surrounding the first top gate region, and a first bottom gate region disposed under the first channel region. The second JFET includes a second top gate region disposed on the surface and having a same depth with the first top gate region relative to the surface, a second channel region surrounding the second top gate region and disposed deeper than the first channel region relative to the surface, and a second bottom gate region disposed under the second channel region and being deeper than the first bottom gate region relative to the surface.

Abstract: Disclosed is a data recognition model construction apparatus. The data recognition model construction apparatus includes a video inputter configured to receive a video, an image composition unit configured to, based on a common area included in each of a plurality of images that form at least a portion of the video, generate a composition image by overlaying at least a portion of the plurality of images, a learning data inputter configured to receive the generated composition image, a model learning unit configured to make a data recognition model learn using the generated composition image, and a model storage configured to store the learnt data recognition model.

Abstract: A semiconductor device includes a first junction-gate field-effect transistor (JFET) having a first pinch-off voltage, and a second JFET having a second pinch-off voltage higher than the first pinch-off voltage. The first JFET includes a first top gate region disposed on a surface of a substrate, a first channel region surrounding the first top gate region, and a first bottom gate region disposed under the first channel region. The second JFET includes a second top gate region disposed on the surface and having a same depth with the first top gate region relative to the surface, a second channel region surrounding the second top gate region and disposed deeper than the first channel region relative to the surface, and a second bottom gate region disposed under the second channel region and being deeper than the first bottom gate region relative to the surface.

Abstract: Disclosed is a data recognition model construction apparatus. The data recognition model construction apparatus includes a video inputter configured to receive a video, an image composition unit configured to, based on a common area included in each of a plurality of images that form at least a portion of the video, generate a composition image by overlaying at least a portion of the plurality of images, a learning data inputter configured to receive the generated composition image, a model learning unit configured to make a data recognition model learn using the generated composition image, and a model storage configured to store the learnt data recognition model.

Abstract: Disclosed are an artificial intelligence (AI) system using a machine learning algorithm such as deep learning, and an application thereof. The present disclosure provides an electronic device comprising: an input unit for receiving content data; a memory for storing information on the content data; an audio output unit for outputting the content data; and a processor, which acquires a plurality of data keywords by analyzing the inputted content data, matches and stores time stamps, of the content data, respectively corresponding to the plurality of acquired keywords, based on a user command being inputted, searches for a data keyword corresponding to the inputted user command among the stored data keywords, and plays the content data based on the time stamp corresponding to the searched data keyword.

Abstract: Provided is a method of treating an exhaust gas including preparing a rotor provided with a zeolite-carbon composite therein, providing a mixed gas including an organic gas and an alkali gas in the rotor, adsorbing the organic gas and the alkali gas to the zeolite-carbon composite, and desorbing the organic gas and the alkali gas from the zeolite-carbon composite, and the zeolite-carbon composite includes a zeolite and a carbon layer on the zeolite.

Abstract: Disclosed herein is a video search device comprising: at least one processor configured to implement an updating unit generating event object information based on feature information on an object detected in a video; and a storage configured to store comparison object information containing feature information on a reference object, wherein the processor is further configured to implement: an object information generating/deleting unit configured to create information on an object having a predetermined degree of similarity between the event object information and the comparison object information as final object information, and storing the final object information in the storage; and a data searching unit searching the final object information for data that satisfies a search criterion entered by a user.

Abstract: The disclosure relates to an artificial intelligence (AI) system using a machine learning algorithm such as deep learning, and an application thereof. In particular, an electronic apparatus, a document displaying method thereof, and a non-transitory computer readable recording medium are provided. An electronic apparatus according to an embodiment of the disclosure includes a display unit displaying a document, a microphone receiving a user voice, and a processor configured to acquire at least one topic from contents included in a plurality of pages constituting the document, recognize a voice input through the microphone, match the recognized voice with one of the acquired at least one topic, and control the display unit to display a page including the matched topic.

Abstract: A semiconductor device includes a first junction-gate field-effect transistor (JFET) having a first pinch-off voltage, and a second JFET having a second pinch-off voltage higher than the first pinch-off voltage. The first JFET includes a first top gate region disposed on a surface of a substrate, a first channel region surrounding the first top gate region, and a first bottom gate region disposed under the first channel region. The second JFET includes a second top gate region disposed on the surface and having a same depth with the first top gate region relative to the surface, a second channel region surrounding the second top gate region and disposed deeper than the first channel region relative to the surface, and a second bottom gate region disposed under the second channel region and being deeper than the first bottom gate region relative to the surface.

Abstract: An electronic device, a warning message providing method therefor, and a non-transitory computer-readable recording medium are provided. Disclosed is an artificial intelligence (AI) system using a machine learning algorithm such as deep learning and an application thereof.

Abstract: Disclosed herein is a video search device comprising: at least one processor configured to implement an updating unit generating event object information based on feature information on an object detected in a video; and a storage configured to store comparison object information containing feature information on a reference object, wherein the processor is further configured to implement: an object information generating/deleting unit configured to create information on an object having a predetermined degree of similarity between the event object information and the comparison object information as final object information, and storing the final object information in the storage; and a data searching unit searching the final object information for data that satisfies a search criterion entered by a user.

Abstract: Provided is an Artificial Intelligence (AI) system for simulating a human brain's functions, such as recognition, decision, etc., by using a machine learning algorithm such as deep learning, etc. and applications of the AI system. Provided is an electronic device including: a camera configured to capture an outside image of a vehicle, and a processor configured to execute one or more instructions stored in a memory, wherein the processor executes the one or more instructions to: determine, from the captured image, at least one object for estimating lane information; estimate, from the image, lane information of a road on which the vehicle is traveling, based on a distance between the determined at least one object and the vehicle and a vanishing point of the image; and output guide information for guiding driving of the vehicle based on the estimated lane information.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device includes forming a first gate insulating film on a substrate for a first device, forming a first gate electrode on the first gate insulating film; forming a mask pattern on the first gate electrode to expose opposing end portions of the first gate electrode, wherein a length of the mask pattern is smaller than a length of the first gate electrode; performing ion implantation through the exposed opposing end portions of the first gate electrode using the mask pattern to simultaneously form first and second drift regions in the substrate; forming spacers on sidewalls of the first gate electrode, respectively; and forming a first source region and a first drain region in the first and second drift regions, respectively.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device includes forming a first gate insulating film on a substrate for a first device, forming a first gate electrode on the first gate insulating film; forming a mask pattern on the first gate electrode to expose opposing end portions of the first gate electrode, wherein a length of the mask pattern is smaller than a length of the first gate electrode; performing ion implantation through the exposed opposing end portions of the first gate electrode using the mask pattern to simultaneously form first and second drift regions in the substrate; forming spacers on sidewalls of the first gate electrode, respectively; and forming a first source region and a first drain region in the first and second drift regions, respectively.

Abstract: Disclosed are an artificial intelligence (AI) system using a machine learning algorithm such as deep learning, and an application thereof. The present disclosure provides an electronic device comprising: an input unit for receiving content data; a memory for storing information on the content data; an audio output unit for outputting the content data; and a processor, which acquires a plurality of data keywords by analyzing the inputted content data, matches and stores time stamps, of the content data, respectively corresponding to the plurality of acquired keywords, based on a user command being inputted, searches for a data keyword corresponding to the inputted user command among the stored data keywords, and plays the content data based on the time stamp corresponding to the searched data keyword.

Abstract: Disclosed are an artificial intelligence (AI) system using a machine learning algorithm such as deep learning, and an application thereof. The present disclosure provides an electronic device comprising: an input unit for receiving content data; a memory for storing information on the content data; an audio output unit for outputting the content data; and a processor, which acquires a plurality of data keywords by analyzing the inputted content data, matches and stores time stamps, of the content data, respectively corresponding to the plurality of acquired keywords, based on a user command being inputted, searches for a data keyword corresponding to the inputted user command among the stored data keywords, and plays the content data based on the time stamp corresponding to the searched data keyword.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device includes forming a first gate insulating film on a substrate for a first device, forming a first gate electrode on the first gate insulating film; forming a mask pattern on the first gate electrode to expose opposing end portions of the first gate electrode, wherein a length of the mask pattern is smaller than a length of the first gate electrode; performing ion implantation through the exposed opposing end portions of the first gate electrode using the mask pattern to simultaneously form first and second drift regions in the substrate; forming spacers on sidewalls of the first gate electrode, respectively; and forming a first source region and a first drain region in the first and second drift regions, respectively.

Abstract: Disclosed is a data recognition model construction apparatus. The data recognition model construction apparatus includes a video inputter configured to receive a video, an image composition unit configured to, based on a common area included in each of a plurality of images that form at least a portion of the video, generate a composition image by overlaying at least a portion of the plurality of images, a learning data inputter configured to receive the generated composition image, a model learning unit configured to make a data recognition model learn using the generated composition image, and a model storage configured to store the learnt data recognition model.