Abstract: A semiconductor device includes bonded circuit and cell regions. The cell region includes a substrate, a base memory portion, and a bonding memory portion. Here, base memory portion includes a first gate stacking structure on the substrate and having first and second surfaces, a first channel structure penetrating the first gate stacking structure, and a base bonding pad on the second surface and connected to the first channel structure. The bonding memory portion includes a second gate stacking structure having a third surface bonded to the base memory portion and a fourth surface bonded to the circuit region, a second channel structure penetrating the second gate stacking structure, a first bonding pad connected to the second channel structure in the third surface and bonded to the base bonding pad, and a second bonding pad connected to the second channel structure in the fourth surface and bonded to the circuit region.

Abstract: A semiconductor device includes gate electrode structures, a first division pattern, a second division pattern, and a memory channel structure. Each gate electrode structure includes gate electrodes spaced apart from each other on a substrate in a first direction substantially perpendicular to an upper surface of the substrate. Each gate electrode extends in a second direction substantially parallel to the upper surface of the substrate. The gate electrode structures are spaced apart from each other in a third direction substantially parallel to the upper surface and crossing the second direction. The first division pattern extends in the second direction between the gate electrode structures on the substrate. The second division pattern extends in the third direction on the substrate, and is on sidewalls of end portions in the second direction of the gate electrode structures. The memory channel structure extends in the first direction through each gate electrode structure.

Abstract: Provided is a method of producing a composite solid electrolyte. The method includes step S10 of producing an oxide-based solid electrolyte membrane by electrospinning a mixture including an oxide-based solid electrolyte precursor and a polymer, step S20 of producing an oxide-based solid electrolyte support by removing the polymer inside the oxide-based solid electrolyte membrane, and step S30 of causing the oxide-based solid electrolyte support to be impregnated with a sulfide-based solid electrolyte using a sulfide-based solid electrolyte precursor solution including a sulfide-based solid electrolyte precursor and a solvent.

Abstract: The present invention provides copolymers of polyethylene oxide methacrylate and alkenyl group-containing methacrylate, method for preparing the same and use thereof. The copolymers may be used for preparing solid phase electrolytes having high ionic conductivity and enhanced physical properties.

Abstract: The present invention provides copolymers of polyethylene oxide methacrylate and alkenyl group-containing methacrylate, method for preparing the same and use thereof. The copolymers may be used for preparing solid phase electrolytes having high ionic conductivity and enhanced physical properties.