Publication number: 20230257907
Abstract: Herein provided are cubic boron arsenide (c-BAs) single crystals having an unexpectedly high ambipolar mobility at room temperature, µa, at one or more locations thereof that is greater than or equal to 1500, 1600, 1700, 1800, 1900, 2000, 2100, 2200, 2300, 2400, 2500, 2600, 3000, 4000, 5000, 6000, 7000, 8000, 9000, or 10000 cm2V-1s-1, wherein the ambipolar mobility is defined as: µa = 2µeµh/(µe + µh), wherein µe is electron mobility and µh is hole mobility, and having a room temperature thermal conductivity at the one or more locations thereof that is greater than or equal to 1000 Wm-1K-1. Methods of making and using the c-BAs single crystals are also provided.
Type:
Application
Filed:
January 23, 2023
Publication date:
August 17, 2023
Applicant:
University of Houston System
Inventors:
Zhifeng REN, Jiming BAO, Shuai YUE, Fei TIAN, Geethal Amila Udalamatta GAMAGE, Gang CHEN, Jungwoo SHIN