Abstract: A semiconductor package, a substrate and a manufacturing method thereof are provided. The substrate comprises a conductive carrier, a first metal layer and a second metal layer. The first metal layer is formed on the conductive carrier and comprises an lead pad having an upper surface. The second metal layer is formed on the first metal layer and comprises a bond pad. The bond pad overlaps and is in contact with the upper surface of the first metal layer. The upper surface of the lead pad is partially exposed. A part of the bond pad overhang outward from the edge of the lead pad.

Abstract: A method for forming semiconductor packages is disclosed. The method involves providing a support substrate and forming at least one conductive layer thereon. The method also includes coupling the at least one conductive layer to a support face of a film substrate for securing the at least one conductive layer to the support face and removing the support substrate from the at least one conductive layer. The at least one interconnector is adhered to the film substrate for forming an interposer. The method further involves bonding a integrated circuit chip to the at least one conductive layer of the interposer and disposing a compound over the support face to thereby encapsulate the integrated circuit chip and the least one conductive layer for forming an encapsulated package therefrom. Portions of the at least one conductive layer is then exposed by removing the film substrate from the encapsulated package.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The package element has a first insulating layer, and a plurality of holes are disposed on the first surface of the first insulating layer. Besides, a plurality of package traces are embedded in the insulating layer and connected to the other end of the holes. The holes function as a positioning setting for connecting the solder balls to the package traces, such that the signal of the semiconductor chip is connected to the package trace via conductor of the chip, and further transmitted externally via solder ball. The elastic modulus of the material of the first insulating layer is preferably larger than 1.0 GPa.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device has an active surface. The semiconductor device includes at least a connecting element and at least a bump. The connecting element is disposed on the activate surface and has a minimum dimension smaller than 100 microns. The bump is disposed on the connecting element and is electrically connected to the active surface by the connecting element. The bump includes a pillar part disposed on the connecting element and a top part disposed at the top of the pillar part. The pillar part has a first dimension and a second dimension both parallel to the active surface. The first dimension is longer than 1.2 times the second dimension. The top part is composed of solder and will melt under the determined temperature. The pillar part will not melt under a determined temperature.

Abstract: A method for coupling a semiconductor substrate to a receiving substrate is disclosed. The method comprising the step of providing a receiving substrate having at least one receiving pad formed thereon, the at least one receiving pad having a face and a portion substantially extending from the periphery of the face to the receiving substrate. The method also involves the step of providing a semiconductor substrate having at least one bonding pad formed thereon and at least one pillar extending from the at least one bonding pad towards the at least one receiving pad, the at least one pillar having a reflowable and a non-reflowable portion. The method further involves the step of positioning the semiconductor substrate over the receiving substrate for facing the at least one receiving pad towards the at least one pillar, and reflowing the reflowable portion substantially over the face and substantially onto the portion.