Abstract: A semiconductor structure for manufacturing a semiconductor package device is provided. The semiconductor structure includes a carrier and a dielectric layer. The carrier has a first surface and a second surface opposite to the first surface. The carrier includes an inner core layer and an exterior clad layer, and the inner core layer is covered by the exterior clad layer. The dielectric layer is formed on the first surface of the carrier. The carrier supports the dielectric layer.

Abstract: A semiconductor structure for manufacturing a semiconductor package device is provided. The semiconductor structure includes a carrier and a dielectric layer. The carrier has a first surface and a second surface opposite to the first surface. The carrier includes an inner core layer and an exterior clad layer, and the inner core layer is covered by the exterior clad layer. The dielectric layer is formed on the first surface of the carrier. The carrier supports the dielectric layer.

Abstract: A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a carrier. The carrier has a first surface and a second surface opposite to the first surface. The carrier includes an inner core layer and an exterior clad layer, and the inner core layer is covered by the exterior clad layer.

Abstract: A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a carrier. The carrier has a first surface and a second surface opposite to the first surface. The carrier includes an inner core layer and an exterior clad layer, and the inner core layer is covered by the exterior clad layer.

Abstract: The invention discloses a package structure including a semiconductor device, a first protection layer, a second protection layer and at least one conductive bump. The semiconductor device has at least one pad. The first protection layer is disposed on the semiconductor device and exposes the pad. The second protection layer, disposed on the first protection layer, has at least one first opening and at least one second opening. The first opening exposes a partial surface of the pad. The second opening exposes a partial surface of the first protection layer. The conductive bump, opposite to the pad, is disposed on the second protection layer and coupled to the pad through the first openings.

Abstract: A water jet handler (200) has a loading location (205), a cutting location (210), and an unloading location (215); and two movable mounts (240 and a 245). As a first movable mount (240) receives a molded substrate at the loading location (205), and transports it to the cutting location (210), a second movable mount (245) transports singulated semiconductor packages of a previously singulated molded substrate from the cutting location (210) to the unloading location (215). As the molded substrate on the first movable mount (240) is cut in the X direction (232) by a water jet, the singulated semiconductor packages are unloaded. The molded substrate is then transferred to the second movable mount (245) on which it is cut in the Y direction (272) to produce singulated semiconductor packages, as the first movable mount (240) returns to the loading location (205), when another molded substrate is loaded.

Abstract: A predetermined amount of solder (315) is deposited on the free ends of copper posts (310) extending from die pads of a semiconductor die (305). The solder (315) is coated with flux (320) and the semiconductor die (305) is placed on a leadframe (100) with the solder deposits (315) abutting interconnect locations (335) on inner lead portions (101). When reflowed, the solder deposits (315) melt and with the assistance of the flux (320) forms solder interconnects between the free ends of the copper posts (310) and the interconnect locations (335). Due to the predetermined amount of solder (315) deposited on the free ends of the copper posts (310), the molten solder (315) tends not to flow away from the interconnect location (335). Thus, advantageously allowing a substantial portion of the solder deposit (315) to remain at the interconnect locations (335) to form solder interconnects.

Abstract: A predetermined amount of solder (315) is deposited on the free ends of copper posts (310) extending from die pads of a semiconductor die (305). The solder (315) is coated with flux (320) and the semiconductor die (305) is placed on a leadframe (100) with the solder deposits (315) abutting interconnect locations (335) on inner lead portions (101). When reflowed, the solder deposits (315) melt and with the assistance of the flux (320) forms solder interconnects between the free ends of the copper posts (310) and the interconnect locations (335). Due to the predetermined amount of solder (315) deposited on the free ends of the copper posts (310), the molten solder (315) tends not to flow away from the interconnect location (335). Thus, advantageously allowing a substantial portion of the solder deposit (315) to remain at the interconnect locations (335) to form solder interconnects.