Abstract: Provided is a substrate treating apparatus including: a chamber housing; a substrate support in the chamber housing and configured to support a substrate, wherein the substrate support includes a focus ring surrounding a space configured to support the substrate; a process gas supply configured to supply a process gas into the chamber housing; and a plasma generator configured to generate plasma using an electrode in the chamber housing, wherein the focus ring includes: a second partial ring; a first partial ring on the second partial ring, the first partial ring including an inclined surface; and a third partial ring on the second partial ring and spaced apart from the first partial ring.

Abstract: A substrate processing device comprises a process chamber which forms an internal space; a substrate support disposed inside the process chamber and configured to support a substrate; a first electrode configured to generate a plasma in the internal space; an electromagnet configured to generate a magnetic field in the internal space to control a distribution of the plasma; and a DC power supply unit configured to supply a first DC pulse signal to the electromagnet. The first DC pulse signal is repeated at a first period to include a plurality of cycles, each cycle including a first section and a second section subsequent to the first section, the first DC pulse signal has a first level during the first section, a second level different from the first level during the second section, and the first and second sections each have a duration of 0.1 to 10 seconds.

Abstract: A substrate treating apparatus includes a process chamber for treating a substrate, a magnetic field generator spaced apart from an outer surface of the process chamber and applying a first magnetic field to the process chamber, and a magnetic field mask disposed in a space between the process chamber and the magnetic field generator and applying a second magnetic field interfering with the first magnetic field. The magnetic field mask includes a ferromagnetic material.

Abstract: A substrate processing method is provided. The substrate processing method comprises loading a substrate onto a substrate support inside a chamber, forming a plasma inside the chamber, providing a first DC pulse signal to an electromagnet that generates a magnetic field inside the chamber and processing the substrate with the plasma, wherein the first DC pulse signal is repeated at a first period including a first section and a second section subsequent to the first section, the first DC pulse signal has a first level during the first section, and the first DC pulse signal has a second level different from the first level during the second section.

Abstract: A substrate processing apparatus includes: a chamber configured to process a substrate; a first electrode configured to form plasma in an internal space of the chamber; a second electrode facing the first electrode and configured to form plasma in the internal space of the chamber; and a magnetic body to control the plasma formed in the internal space of the chamber. The magnetic body includes a magnetic field generator, an electrode structure, and a mimic structure. The magnetic field generator includes a coil formed by stacked turns of a wire having two ends. The electrode structure is formed by both ends of the wire. The mimic structure is attached to the magnetic field generator and spaced apart from the electrode structure. The electrode structure has a length and the mimic structure has a length substantially the same as the length of the electrode structure.

Abstract: A plasma processing apparatus includes: a plasma chamber; a radio frequency (RF) power supply configured to generate plasma in the plasma chamber; an electromagnet configure to apply a magnetic field to the plasma; and a pulse current generator configured to provide a pulse current to the electromagnet, wherein each period of the pulse current includes a first section and a second section subsequent to the first section, and the pulse current generator is further configured to: provide, at the first section, the pulse current to the electromagnet in a first direction to generate the magnetic field, and provide, at the second section, the pulse current to the electromagnet in a second direction opposite to the first direction to reduce intensity of the magnetic field generated at the first section.

Abstract: A substrate processing method is provided. The substrate processing method comprises loading a substrate onto a substrate support inside a chamber, forming a plasma inside the chamber, providing a first DC pulse signal to an electromagnet that generates a magnetic field inside the chamber and processing the substrate with the plasma, wherein the first DC pulse signal is repeated at a first period including a first section and a second section subsequent to the first section, the first DC pulse signal has a first level during the first section, and the first DC pulse signal has a second level different from the first level during the second section.

Abstract: The objective of the present disclosure is to provide a method of expanding the sheath and bulk of plasma using dual high frequencies, in which the sheath and bulk of microwave-generated plasma are expanded. The method of expanding the sheath and bulk of plasma using dual high frequencies according to one embodiment of the present disclosure includes: a generation step of generating plasma by a microwave plasma generator; and an expansion step of expanding the sheath and bulk of the plasma by applying a radio-frequency (RF) bias to a radio-frequency electrode disposed at a predetermined distance from the microwave plasma generator.

Abstract: The objective of the present disclosure is to provide a method of expanding the sheath and bulk of plasma using dual high frequencies, in which the sheath and bulk of microwave-generated plasma are expanded. The method of expanding the sheath and bulk of plasma using dual high frequencies according to one embodiment of the present disclosure includes: a generation step of generating plasma by a microwave plasma generator; and an expansion step of expanding the sheath and bulk of the plasma by applying a radio-frequency (RF) bias to a radio-frequency electrode disposed at a predetermined distance from the microwave plasma generator.