Abstract: A chemical mechanical polishing pad. The pad includes a surface and a polymer matrix capable of transmitting at least a portion of incident radiation. In addition, at least one embedded structure in the polymer matrix, including a portion of the pad where the embedded structure is not present, and a window integral to the pad defined by the portion of the pad where the embedded structure is not present.

Abstract: A base substrate includes a transmissive area and a reflective area. An insulation layer is formed on the base substrate to have an embossed pattern in correspondence with the transmissive area. A first pixel electrode includes a first transmissive electrode formed on the insulation layer of the embossed pattern, and a first reflective electrode formed on the base substrate in correspondence with the reflective area. A second pixel electrode includes a second transmissive electrode formed on the insulation layer of the embossed pattern corresponding to the transmissive area, and a second reflective electrode corresponding to the reflective area.

Abstract: Provided is a method of forming a polycrystalline silicon thin film with improved electrical characteristics. The method includes forming an amorphous silicon thin film on a substrate, partially melting a portion of the amorphous silicon thin film by irradiating the portion of the amorphous silicon thin film with a laser beam having a low energy density, forming polycrystalline silicon grains with a predetermined crystalline arrangement by crystallizing the partially molten portion of the amorphous silicon thin film, completely melting a portion of the polycrystalline silicon grains and a portion of the amorphous silicon thin film by irradiation of a laser beam having a high energy density while repeatedly moving the substrate by a predetermined distance, and growing the polycrystalline silicon grains by crystallizing the completely molten silicon homogeneously with the predetermined crystalline arrangement.

Abstract: An LCD with reduced power consumption is described. The LCD includes a liquid crystal panel having a plurality of gate lines and data lines, a data driver supplying a data voltage to the plurality of data lines, a controller generating a current control signal to control an output terminal of the data driver so that the output terminal operates during a first period in which data is outputted from the data driver, and the output terminal does not operate during a second period in which data is not outputted from the data driver, and a gate driver that supplies a scan signal to the plurality of the gate lines.

Abstract: A wideband retardation layer (or film) that can perform circular polarizing so that the retardation layer can be formed with an organic light-emitting device to be relatively thin and have a relatively high contrast with no reduction in brightness, and an organic light-emitting device including the retardation layer. The retardation film includes a base and a retardation layer including an alkali oxide layer grown to be inclined on a surface of the base, wherein the alkali oxide layer is disposed by slant-angle depositing alkali oxide on the surface of the base.

Abstract: An etchant composition that allows simplification and optimization of semiconductor manufacturing process is presented, along with a method of patterning a conductive layer using the etchant and a method of manufacturing a flat panel display using the etchant. The etchant includes nitric acid, phosphoric acid, acetic acid, and an acetate compound in addition to water.

Abstract: A semiconductor device and method of fabricating a semiconductor device are provided. The method includes forming a gate trench in a semiconductor substrate to define source/drain regions. The source/drain regions are separated from each other by the gate trench, and the semiconductor substrate is exposed through the gate trench. The semiconductor substrate has impurities of a first conductivity type. The source/drain regions have impurities of a second conductivity type different from the first conductivity type. The concentration of the second conductivity type impurities increases as the impurities approach the surfaces of the source/drain regions. A differential gate dielectric layer is formed along the surfaces of the source/drain regions and the semiconductor substrate exposed through the gate trench. A gate electrode filling the gate trench is formed.

Abstract: The invention provides a method for preventing fencing during process of forming an ABS on a slider substrate includes the steps of: (a) providing a slider substrate having a photo-resist covered thereon, the photo-resist having a plurality of trenches developed thereon, the plurality of trenches collectively defining an air bearing surface pattern, the plurality of trench each having at least a non-vertical sidewall, the at least non-vertical sidewall including a zigzag-shaped edge adjoining the slider substrate; (b) etching the photo-resist by oxygen ions, such that the zigzag-shaped edge is trimmed to be a straight edge and the at least non-vertical sidewall is trimmed to be a vertical sidewall; and (c) etching the slider substrate exposed from the trenches such that a fencing-free air-bearing surface is formed on the slider substrate.

Abstract: A fuel cell system and a reformer for a fuel cell system prevents backfire and improves efficiency of heat transfer. The fuel cell system includes a reformer generating hydrogen gas from fuel including hydrogen by a catalytic chemical reaction using heat energy, and at least one electricity generating unit generating electrical energy by an electrochemical reaction between the hydrogen gas and oxygen. The reformer includes a case, a heat source, and a reforming reaction part. The case forms an external shape. The heat source is disposed in the case to generate heat energy by an oxidation reaction between fuel and a catalyst, and includes a mesh, an oxidation catalyst layer formed on a surface of the mesh, and at least one fuel injection nozzle supplying the fuel to the oxidation catalyst layer. The reforming reaction part is disposed in the case to generate hydrogen gas from fuel using the heat energy generated from the heat source.

Abstract: A electronic device includes a housing, a cover detachably mounted on the housing and a releasing assembly. The housing has a first surface and two latching hooks disposed on the first surface. The releasing assembly is mounted on the cover to assemble the cover to the housing and detach the cover from the housing. The releasing assembly includes a fixing base mounted on the cover, two latching pieces, an elastic piece and a releasing piece. The two latching pieces are slidably mounted on the fixing base and both includes a latching end exposing out of the fixing base. The elastic piece is elastically assembled to the fixing base to connect the two latching pieces together. The releasing piece is releasably assembled to the fixing base for releasably resisting on the two latching pieces to make the latching pieces release from the corresponding latching hooks.

Abstract: A method is provided a method for transmitting data in a MIMO communication system. The method includes receiving feedback information including channel quality information of transmission antennas from terminals; selecting one of a multi-user mode and a single user mode according to the channel quality information; extracting information for the selected mode from the feedback information; selecting at least one terminal and a preceding matrix of at least one transmission antenna through which data is transmitted according to the extracted information and the selected mode; and transmitting data using the selected precoding matrix and information of the selected terminal.

Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

Abstract: The present invention relates to a direct oxidation fuel cell system including at least one electricity generating element including at least one membrane-electrode assembly which includes an anode and a cathode on opposite sides of a polymer electrolyte membrane, and a separator. The direct oxidation fuel cell generates electricity through an electrochemical reaction of a fuel and an oxidant. An oxidant supplier supplies the electricity generating element with the oxidant. A fuel supplier supplies the anode with a combination of fuel and hydrogen to provide improved power output.

Abstract: An intermediate transfer belt that includes a conductive core shell component thereover, wherein the core is, for example, comprised of a silica, and the shell is comprised of, for example, an antimony tin oxide.

Abstract: A method for the vapor deposition of aluminum films is provided. Such method employs a dialkyl amido dihydroaluminum compound of the formula [H2AlNR1R2]n wherein R1 and R2 are the same or different alkyl groups having 1 to 3 carbons, and n is an integer of 2 or 3. The aluminum films may be thick or thin and may be aluminum films or may be mixed metal films with aluminum metal. Both CVD and ALD methods may be employed.

Abstract: Integrated circuits having combined memory and logic functions are provided. In one aspect, an integrated circuit is provided. The integrated circuit comprises: a substrate comprising a silicon layer over a BOX layer, wherein a select region of the silicon layer has a thickness of between about three nanometers and about 20 nanometers; at least one eDRAM cell comprising: at least one pass transistor having a pass transistor source region, a pass transistor drain region and a pass transistor channel region formed in the select region of the silicon layer; and a capacitor electrically connected to the pass transistor.

Abstract: A treatment solution used to prevent posterior capsular opacification is applied or introduced into the lens capsular bag before, during, or after cataract surgery. The treatment solution comprises an ion transport mechanism interference agent, which either alone or in combination with other treatment agents such as an osmotic stress agent and an agent to establish a suitable pH, selectively induces detachment and/or death of lens epithelial cells such that posterior capsular opacification is prevented. While the ion transport mechanism interference agent is capable of interfering with the cellular mechanisms and cell ion distribution of a broad range of cells, a concentration of agent is selected such that the treatment solution interferes selectively with the cellular mechanisms of lens epithelial cells while leaving other ocular cells substantially unharmed.

Abstract: A method of manufacturing a calibration apparatus for an optical scanner. The method includes reacting a substrate coated with a functional group and a molecule capable of forming an activated excimer to immobilize the molecule on the substrate.

Abstract: A photoconductor that includes, for example, a supporting substrate, a photogenerating layer, and at least one charge transport layer comprised of at least one charge transport component, and wherein at least one of the photogenerating layer and charge transport layer contains an anthracene, including derivatives thereof.