Abstract: Disclosed are a nonvolatile memory device and a read method of the nonvolatile memory device. The nonvolatile memory device includes a memory cell array, a row decoder circuit, and a page buffer circuit including first latches and second latches. The page buffer circuit respectively latches first sensing values, which are based on data stored in adjacent memory cells, at the first latches and respectively latches second sensing values, which are based on data stored in selected memory cells, at the second latches at least two times.

Abstract: Disclosed are a nonvolatile memory device and a read method of the nonvolatile memory device. The nonvolatile memory device includes a memory cell array, a row decoder circuit, and a page buffer circuit including first latches and second latches. The page buffer circuit respectively latches first sensing values, which are based on data stored in adjacent memory cells, at the first latches and respectively latches second sensing values, which are based on data stored in selected memory cells, at the second latches at least two times.

Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.

Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.

Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.

Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.

Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.