Patents by Inventor Jin Bock Lee
Jin Bock Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10333023Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.Type: GrantFiled: May 30, 2018Date of Patent: June 25, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Pun Jae Choi, Yu Seung Kim, Jin Bock Lee
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Publication number: 20180351033Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.Type: ApplicationFiled: May 30, 2018Publication date: December 6, 2018Inventors: Pun Jae CHOI, Yu Seung KIM, Jin Bock LEE
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Patent number: 10121939Abstract: A semiconductor light-emitting device may include an emission structure, a protection pattern layer on a limited region of the emission structure, and an insulating pattern layer on the emission structure. The protection pattern layer may expose a separate remaining region of the emission structure, and the first insulating pattern layer may cover at least the remaining region of the emission structure. The insulating layer may include an opening that exposes at least a portion of a surface of the protection pattern layer, such that the emission structure remains covered by at least one of the insulating layer and the protection pattern layer.Type: GrantFiled: June 19, 2017Date of Patent: November 6, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seong-seok Yang, Jin-bock Lee, Jung-hee Kwak, Jung-kyu Park, Jung-sung Kim
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Patent number: 9997663Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.Type: GrantFiled: May 24, 2017Date of Patent: June 12, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Pun Jae Choi, Yu Seung Kim, Jin Bock Lee
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Publication number: 20170365745Abstract: A semiconductor light-emitting device may include an emission structure, a protection pattern layer on a limited region of the emission structure, and an insulating pattern layer on the emission structure. The protection pattern layer may expose a separate remaining region of the emission structure, and the first insulating pattern layer may cover at least the remaining region of the emission structure. The insulating layer may include an opening that exposes at least a portion of a surface of the protection pattern layer, such that the emission structure remains covered by at least one of the insulating layer and the protection pattern layer.Type: ApplicationFiled: June 19, 2017Publication date: December 21, 2017Applicant: Samsung Electronics Co., Ltd.Inventors: Seong-seok YANG, Jin-bock LEE, Jung-hee KWAK, Jung-kyu PARK, Jung-sung KIM
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Publication number: 20170323999Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.Type: ApplicationFiled: May 24, 2017Publication date: November 9, 2017Inventors: Pun Jae CHOI, Yu Seung KIM, Jin Bock LEE
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Patent number: 9680050Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.Type: GrantFiled: February 2, 2015Date of Patent: June 13, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Pun Jae Choi, Yu Seung Kim, Jin Bock Lee
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Patent number: 9601665Abstract: A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.Type: GrantFiled: August 17, 2015Date of Patent: March 21, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung Hyun Sim, Geon Wook Yoo, Mi Hyun Kim, Dong Hoon Lee, Jin Bock Lee, Je Won Kim, Hye Seok Noh, Dong Kuk Lee
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Publication number: 20170040515Abstract: A semiconductor light emitting device is provided. The device includes a semiconductor stack, insulating layers, a current spreading layer, and first and second finger electrodes. The semiconductor stack includes a first and second conductivity-type semiconductor layers, an active layer between the first and second conductivity-type semiconductor layers, and a trench penetrating through the second conductivity-type semiconductor layer and the active layer to expose a portion of the first conductivity-type semiconductor layer. A first insulating layer is disposed on an inner sidewall of the trench. The current spreading layer is disposed on the second conductivity-type semiconductor layer. The first finger electrode is disposed on the exposed portion of the first conductivity-type semiconductor layer. The second insulating layer is disposed on the exposed portion of the first conductivity-type semiconductor layer to cover the first finger electrode.Type: ApplicationFiled: June 16, 2016Publication date: February 9, 2017Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin Bock LEE, Su Yeol LEE, Dong Hyuk JOO
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Patent number: 9537051Abstract: A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructureType: GrantFiled: August 28, 2015Date of Patent: January 3, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Nam Goo Cha, Jin Bock Lee, Dong Kuk Lee, Dong Hyun Cho, Min Wook Choi
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Patent number: 9312249Abstract: In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure.Type: GrantFiled: July 22, 2014Date of Patent: April 12, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Pun Jae . Choi, Sang Bum Lee, Jin Bock Lee, Yu Seung Kim, Sang Yeob Song
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Patent number: 9305906Abstract: In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure.Type: GrantFiled: July 21, 2014Date of Patent: April 5, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Pun Jae Choi, Sang Bum Lee, Jin Bock Lee, Yu Seung Kim, Sang Yeob Song
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Publication number: 20160064609Abstract: A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructureType: ApplicationFiled: August 28, 2015Publication date: March 3, 2016Inventors: Nam Goo CHA, Jin Bock LEE, Dong Kuk LEE, Dong Hyun CHO, Min Wook CHOI
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Publication number: 20160049553Abstract: A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.Type: ApplicationFiled: August 17, 2015Publication date: February 18, 2016Inventors: Sung Hyun SIM, Geon Wook YOO, Mi Hyun KIM, Dong Hoon LEE, Jin Bock LEE, Je Won KIM, Hye Seok NOH, Dong Kuk LEE
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Patent number: 9105762Abstract: A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.Type: GrantFiled: January 28, 2015Date of Patent: August 11, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae Yoon Kim, Jin Bock Lee, Seok Min Hwang, Su Yeol Lee
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Patent number: 9076928Abstract: A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.Type: GrantFiled: May 30, 2013Date of Patent: July 7, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seong Seok Yang, Ki Seok Kim, Je Won Kim, Ju Bin Seo, Sang Seok Lee, Joon Sub Lee, Jin Bock Lee
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Publication number: 20150147835Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.Type: ApplicationFiled: February 2, 2015Publication date: May 28, 2015Inventors: Pun Jae CHOI, Yu Seung KIM, Jin Bock LEE
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Publication number: 20150140707Abstract: A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.Type: ApplicationFiled: January 28, 2015Publication date: May 21, 2015Inventors: Jae Yoon KIM, Jin Bock LEE, Seok Min HWANG, Su Yeol LEE
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Publication number: 20150084537Abstract: In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure.Type: ApplicationFiled: July 22, 2014Publication date: March 26, 2015Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Pun Jae . CHOI, Sang Bum LEE, Jin Bock LEE, Yu Seung KIM, Sang Yeob SONG
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Patent number: 8975653Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.Type: GrantFiled: November 14, 2013Date of Patent: March 10, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Pun Jae Choi, Seung Yu Kim, Jin Bock Lee