Abstract: A semiconductor device includes an active pattern including a lower pattern extending in a first direction, and a plurality of sheet patterns spaced apart from the lower pattern in a second direction. The sheet patterns include an uppermost sheet pattern and a plurality of gate structures on the lower pattern and spaced apart from each other in the first direction. Each of the plurality of gate structures includes a gate electrode and a gate insulating film and a source/drain pattern between adjacent ones of the plurality of gate structures. Each of inner gate structures includes a gate electrode and a gate insulating film. A semiconductor liner film includes silicon-germanium, and contacts the gate insulating film of each of the inner gate structures. A portion of the semiconductor liner film protrudes upwardly in the first direction beyond an upper surface of the uppermost sheet pattern.

Abstract: Provided is method of providing a conversation service in an electronic apparatus, including receiving a conversation input from a user terminal, identifying conversation history information associated with a user of the user terminal, obtaining score information corresponding to the user based on the conversation input and the conversation history information, obtaining response information based on the conversation input and the conversation history information, and providing the user terminal with at least one of the score information and the response information.

Abstract: The present disclosure relates to a two-vane pump for wastewater and a design method of a two-vane pump for wastewater using machine learning, and more particularly, a design method of a two-vane pump using machine learning capable of having efficiency of a target head and performing optimal design for sizes of solids that can pass through and a two-vane pump for wastewater according to the machine learning.

Abstract: A sensor device includes: a sensor panel including sensors arranged in a matrix form and sensor lines electrically connected to the sensors one-to-one; and a sensor driver configured to receive sensing signals from the sensors through the sensor lines, wherein the sensor driver is configured to simultaneously receive a first sensing signal from a first sensor using a first reference signal and a second sensing signal from a second sensor using a second reference signal, wherein the first reference signal and the second reference signal have a same waveform, a phase of the second reference signal is different from a phase of the first reference signal, and wherein a phase of the second sensing signal is different from a phase of the first sensing signal.

Abstract: A negative voltage switching device includes a first switching circuit configured to transmit a first negative voltage, a second switching circuit configured to transmit a second negative voltage, and a switching selection circuit configured to select one of the first switching circuit or the second switching circuit for transmitting one of the first negative voltage and the second negative voltage to an output terminal.

Abstract: A display device includes light transmitting areas including a first light transmitting area and light emitting areas around the light transmitting areas and including a first light emitting area disposed around the first light transmitting area, wherein the first light emitting area includes a first-first light emitting area adjacent to a first portion of each of the light transmitting areas, a first-second light emitting area adjacent to a second portion of each of the light transmitting areas, a first-third light emitting area adjacent to a third portion of each of the light transmitting areas, and a first-fourth light emitting area disposed adjacent to a fourth portion of each of the light transmitting areas. The first-first to first-fourth light emitting areas each include at least one of first to third light emitting portions to emit light of first to third colors, respectively.

Abstract: A display device includes a substrate, a first electrode and a second electrode which are spaced apart from each other in a second direction, light-emitting elements spaced apart from each other in the first direction, a first contact electrode electrically contacting the light-emitting elements, and a second contact electrode electrically contacting the light-emitting elements. The first contact electrode electrically contacts the first electrode through a first contact portion disposed on the first electrode, the second contact electrode electrically contacts the second electrode through a second contact portion disposed on the second electrode, the first contact portion is disposed on an end portion in the first direction of the first contact electrode, and the second contact portion is disposed on an end portion in the first direction of the second contact electrode.

Abstract: A semiconductor device includes a lower pattern on a substrate and protruding in a first direction, a source/drain pattern on the lower pattern and including a semiconductor liner film in contact with the lower pattern, and an epitaxial insulating liner extending along at least a portion of a sidewall of the semiconductor liner film, wherein the epitaxial insulating liner is in contact with the semiconductor liner film, wherein the semiconductor liner film includes a first portion, wherein the first portion of the semiconductor liner film includes a first point spaced apart from the lower pattern at a first height, and a second point spaced apart from the lower pattern at a second height, wherein the second height is greater than the first height, wherein a width of the semiconductor liner film in a second direction at the first point is less than a width of the semiconductor liner film in the second direction at the second point, and wherein the epitaxial insulating liner extends along at least a portion of

Abstract: There is provided a semiconductor device including an active pattern which includes a lower pattern extending in a first direction and a plurality of sheet patterns spaced apart from the lower pattern in a second direction on a substrate, the lower pattern including a protruding pattern protruding from the substrate in the second direction, and a capping pattern being in contact with the protruding pattern on the protruding pattern, a first gate structure and a second gate structure which are disposed on the lower pattern and spaced apart from each other in the first direction, and a source/drain pattern which is disposed on the lower pattern and in contact with the sheet pattern, wherein a thickness of the capping pattern in a portion that overlaps the first gate structure is different from a thickness of the capping pattern in a portion that overlaps the second gate structure.

Abstract: A semiconductor device having improved performance and reliability. The semiconductor device may include a lower pattern extending in a first direction, and a plurality of sheet patterns spaced apart from the lower pattern in a second direction perpendicular to the first direction. A plurality of gate structures may be on the lower pattern and spaced apart in the first direction, and a source/drain pattern, which may include a semiconductor liner film and a semiconductor filling film on the semiconductor liner film. A liner recess that is defined by an inner surface of the semiconductor liner film may include a plurality of width extension regions, and a width of each width extension region in the first direction may increase and then decreases, as a distance increases in the second direction from an upper surface of the lower pattern.

Abstract: A semiconductor device includes a lower pattern extending in a first direction, a first blocking structure which is on the lower pattern and includes at least one first blocking film comprising an oxygen-doped crystalline silicon film, a source/drain pattern on the first blocking structure, and a gate structure which extends in a second direction on the lower pattern and includes a gate electrode and a gate insulating film. Related fabrication methods are also discussed.

Abstract: A semiconductor device includes a substrate; an active pattern disposed on the substrate and extending in a first direction; a plurality of gate structures, wherein the plurality of gate structures is disposed on the active pattern and arranged in the first direction, wherein each of the plurality of gate structures includes a gate electrode and a gate insulating film, and wherein the gate electrode extends in a second direction; a source/drain pattern disposed between adjacent gate structures of the plurality of gate structures; a source/drain contact connected to the source/drain pattern; and a contact silicide film disposed between the source/drain pattern and the source/drain contact, wherein the contact silicide film includes a bowl region that wraps a lower portion of the source/drain contact, and a protruding region that protrudes from the bowl region of the contact silicide film.

Abstract: A semiconductor device includes a lower pattern extending in a first direction, and protruding from a substrate in a second direction, a lower insulating pattern on the lower pattern, and in contact with an upper surface of the lower pattern, a channel pattern on the lower insulating pattern, a plurality of gate structures on the lower pattern and spaced apart from each other in the first direction, wherein each of the plurality of gate structures includes a gate electrode and a gate insulating film, and a source/drain pattern disposed on the lower pattern, and connected to the channel pattern. A vertical level of a lowermost portion of the source/drain pattern is lower than a vertical level of a bottom surface of the lower insulating pattern. The gate electrode overlaps the lower insulating pattern in the second direction.

Abstract: Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.

Abstract: A semiconductor device includes a substrate, a gate electrode on the substrate, a gate spacer on a sidewall of the gate electrode, an active pattern penetrating the gate electrode and the gate spacer, and an epitaxial pattern contacting the active pattern and the gate spacer. The gate electrode extends in a first direction. The gate spacer includes a semiconductor material layer. The active pattern extends in a second direction crossing the first direction.

Abstract: The present invention relates to an edge cloud infrastructure building technology, and particularly, to a system and a method for building an edge cloud, which can simultaneously a large-scale edge cloud in parallel.

Abstract: The present invention relates to an installation technology of components of an edge cloud, and particularly, to a system and a method of edge cloud building for high-speed installation of components of an edge cloud, which can reduce generation and setting operation hours of individual components by automating installation of individual components of the edge cloud. To this end, in the edge cloud building system according to the present invention as a edge cloud building system for high-speed installation of components of an edge cloud, hierarchical components (IaaS, KaaS, PaaS) of an edge cloud are installed by using a server node image and a PaaS component image, and then detailed setting of the hierarchical components is performed by using a declarative script.

Abstract: A semiconductor device comprises an active pattern on a substrate; a plurality of nanosheets spaced apart from each other; a gate electrode surrounding each of the nanosheets; a field insulating layer surrounding side walls of the active pattern; an interlayer insulating layer on the field insulating layer; a source/drain region comprising a first doping layer on the active pattern, a second doping layer on the first doping layer, and a capping layer forming side walls adjacent to the interlayer insulating layer; a source/drain contact electrically connected to, and on, the source/drain region, and a silicide layer between the source/drain region and the source/drain contact which contacts contact with the second doping layer and extends to an upper surface of the source/drain region. The capping layer extends from an upper surface of the field insulating layer to the upper surface of the source/drain region along side walls of the silicide layer.

Abstract: A semiconductor device may include a first active fin, a plurality of second active fins, a first source/drain layer structure, and a second source/drain layer structure. The first active fin may be on a first region of a substrate. The second active fins may be on a second region of the substrate. The first and second gate structures may be on the first and second active fins, respectively. The first source/drain layer structure may be on a portion of the first active fin that is adjacent to the first gate structure. The second source/drain layer structure may commonly contact upper surfaces of the second active fins adjacent to the second gate structure. A top surface of the second source/drain layer structure may be further from the surface of the substrate than a top surface of the first source/drain layer structure is to the surface of the substrate.