Patents by Inventor Jin Changming

Jin Changming has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Porous dielectric material with improved pore surface properties for electronics applications
    Patent number: 6140252
    Abstract: This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28, which may be deposited, for example, between patterned conductors 24. The method may comprise providing a substrate comprising a microelectronic circuit and a porous silica layer, the porous silica layer having an average pore diameter between 2 and 80 nm; and heating the substrate to one or more temperatures between 100 and 490 degrees C. in a substantially halogen-free atmosphere, whereby one or more dielectric properties of the porous dielectric are improved. In some embodiments, the atmosphere comprises a phenyl-containing atmosphere, such as hexaphenyldisilazane.
    Type: Grant
    Filed: May 5, 1998
    Date of Patent: October 31, 2000
    Assignee: Texas Instruments Incorporated
    Inventors: Chih-Chen Cho, Bruce E. Gnade, Douglas M. Smith, Jin Changming, William C. Ackerman, Gregory C. Johnston
  • Porous dielectric material with improved pore surface properties for electronics applications
    Patent number: 5847443
    Abstract: This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28, which may be deposited, for example, between patterned conductors 24. The method may comprise providing a substrate comprising a microelectronic circuit and a porous silica layer, the porous silica layer having an average pore diameter between 2 and 80 nm; and heating the substrate to one or more temperatures between 100 and 490 degrees C. in a substantially halogen-free atmosphere, whereby one or more dielectric properties of the porous dielectric are improved. In some embodiments, the atmosphere comprises a phenyl-containing atmosphere, such as hexaphenyldisilazane.
    Type: Grant
    Filed: November 14, 1996
    Date of Patent: December 8, 1998
    Assignee: Texas Instruments Incorporated
    Inventors: Chi-Chen Cho, Bruce E. Gnade, Douglas M. Smith, Jin Changming, William C. Ackerman, Gregory C. Johnston