Abstract: In certain aspects, a system includes a first filter, a second filter, a dummy load, and a switching circuit coupled to the first filter, the second filter, and the dummy load, and coupled to a first antenna and a second antenna. In a first mode, the switching circuit couples the first filter and the second filter to the first antenna, and, in a second mode, the switching circuit couples the first filter and the third filter to the first antenna and couples the second filter to the second antenna. In certain aspects, the dummy load includes a third filter.

Abstract: A nanocrystal-sized cerium-zirconium-aluminum mixed oxide material includes at least 20% by mass zirconium oxide; between 5% to 55% by mass cerium oxide; between 5% to 60% by mass aluminum oxide; and a total of 25% or less by mass of at least one oxide of a rare earth metal selected from the group of lanthanum, neodymium, praseodymium, or yttrium. The nanocrystal-sized cerium-zirconium-aluminum mixed oxide exhibits hierarchically ordered aggregates having a dso particle size less than 1.5 ?m, and retains at least 80% of surface area and pore volume after ageing at temperature higher than 1000° C. for at least 6 hours. The nanocrystal-sized cerium-zirconium-aluminum mixed oxide material is prepared using a co-precipitation method followed by milling the dried and calcined oxide material. The nanocrystal-sized cerium-zirconium-aluminum mixed oxide material forms a particulate filter that may be used in an exhaust system arising from a gas or diesel engine.

Abstract: A nanocrystal-sized cerium-zirconium mixed oxide material includes at least 30% by mass zirconium oxide; between 5% to 55% by mass cerium oxide; and a total of 25% or less by mass of at least one oxide of a rare earth metal selected from the group of lanthanum, neodymium, praseodymium, or yttrium. The nanocrystal-sized cerium-zirconium mixed oxide exhibits hierarchically ordered aggregates having a d50 particle size less than 1.5 ?m and a total pore volume after calcination at a temperature of 600° C. or more that is at least 0.7 cm3/g with a fraction of pores between 2 nm to 10 nm being less than 15%. The nanocrystal-sized cerium-zirconium mixed oxide material is prepared using a co-precipitation method followed by milling the dried and calcined oxide material. The nanocrystal-sized cerium-zirconium mixed oxide material forms a particulate filter that may be used in an exhaust system arising from a gas or diesel engine.

Abstract: In certain aspects, a system includes a first filter, a second filter, a dummy load, and a switching circuit coupled to the first filter, the second filter, and the dummy load, and coupled to a first antenna and a second antenna. In a first mode, the switching circuit couples the first filter and the second filter to the first antenna, and, in a second mode, the switching circuit couples the first filter and the third filter to the first antenna and couples the second filter to the second antenna. In certain aspects, the dummy load includes a third filter.

Abstract: A method of making an oxygen storage material (OSM) with developed mesoporosity having a small fraction of pores <10 nm (fresh or aged), and resistance to thermal sintering is provided. This OSM is suitable for use as a catalyst and catalyst support. The method of making this oxygen storage material (OSM) includes the preparation of a solution containing pre-polymerized zirconium oligomers, cerium, rare earth and transition metal salts; the interaction of this solution with a complexing agent that has an affinity towards zirconium; the formation of a zirconium-based precursor; and the co-precipitation of all constituent metal hydroxide with abase.

Abstract: A nanocrystal-sized cerium-zirconium-aluminum mixed oxide material includes at least 20% by mass zirconium oxide; between 5% to 55% by mass cerium oxide; between 5% to 60% by mass aluminum oxide; and a total of 25% or less by mass of at least one oxide of a rare earth metal selected from the group of lanthanum, neodymium, praseodymium, or yttrium. The nanocrystal-sized cerium-zirconium-aluminum mixed oxide exhibits hierarchically ordered aggregates having a dso particle size less than 1.5 ?m, and retains at least 80% of surface area and pore volume after ageing at temperature higher than 1000° C. for at least 6 hours. The nanocrystal-sized cerium-zirconium-aluminum mixed oxide material is prepared using a co-precipitation method followed by milling the dried and calcined oxide material.

Abstract: An oxygen storage material (OSM) that exhibits enhanced redox properties, developed mesoporosity, and a resistance to sintering. The oxygen storage material (OSM) has a high oxygen storage capacity (i.e., OSC>1.5 mmol H2/g) and enhanced reducibility (i.e., bimodal TPR-H2 profile with two Tmax in the temperature range from 150° C. to 550° C.). The OSM is suitable for use as a catalyst and a catalyst support. The method of making the oxygen storage material comprises the preparation of a solution containing zirconium, cerium, rare earth and transition metal salts, followed by the co-precipitation of all constituent metal hydroxides with a base.

Abstract: A nanocrystal-sized cerium-zirconium mixed oxide material includes at least 30% by mass zirconium oxide; between 5% to 55% by mass cerium oxide; and a total of 25% or less by mass of at least one oxide of a rare earth metal selected from the group of lanthanum, neodymium, praseodymium, or yttrium. The nanocrystal-sized cerium-zirconium mixed oxide exhibits hierarchically ordered aggregates having a d50 particle size less than 1.5 ?m and a total pore volume after calcination at a temperature of 600° C. or more that is at least 0.7 cm3/g with a fraction of pores between 2 nm to 10 nm being less than 15%. The nanocrystal-sized cerium-zirconium mixed oxide material is prepared using a co-precipitation method followed by milling the dried and calcined oxide material. The nanocrystal-sized cerium-zirconium mixed oxide material forms a particulate filter that may be used in an exhaust system arising from a gas or diesel engine.

Abstract: An oxygen storage material (OSM) that exhibits enhanced redox properties, developed mesoporosity, and a resistance to sintering. The oxygen storage material (OSM) has a high oxygen storage capacity (i.e., OSC>1.5 mmol H2/g) and enhanced reducibility (i.e., bimodal TPR-H2 profile with two Tmax in the temperature range from 150° C. to 550° C.). The OSM is suitable for use as a catalyst and a catalyst support. The method of making the oxygen storage material comprises the preparation of a solution containing zirconium, cerium, rare earth and transition metal salts, followed by the co-precipitation of all constituent metal hydroxides with a base.

Abstract: A method of making an oxygen storage material (OSM) with developed mesoporosity having a small fraction of pores <10 nm (fresh or aged), and resistance to thermal sintering is provided. This OSM is suitable for use as a catalyst and catalyst support. The method of making this oxygen storage material (OSM) includes the preparation of a solution containing pre-polymerized zirconium oligomers, cerium, rare earth and transition metal salts; the interaction of this solution with a complexing agent that has an affinity towards zirconium; the formation of a zirconium-based precursor; and the co-precipitation of all constituent metal hydroxide with abase.

Abstract: Embodiments are directed to a method of forming portions of a fin-type field effect transistor (FinFET). The method includes forming at least one fin, and forming a dielectric layer over at least a portion of the at least one fin. The method further includes forming a work function layer over at least a portion of the dielectric layer. The method further includes forming a source region or a drain region adjacent the at least one fin, and performing an anneal operation, wherein the anneal operation anneals the dielectric layer and either the source region or the drain region, and wherein the work function layer provides a protection function to the at least a portion of the dielectric layer during the anneal operation.

Abstract: Embodiments are directed to a method of forming portions of a fin-type field effect transistor (FinFET). The method includes forming at least one fin, and forming a dielectric layer over at least a portion of the at least one fin. The method further includes forming a work function layer over at least a portion of the dielectric layer. The method further includes forming a source region or a drain region adjacent the at least one fin, and performing an anneal operation, wherein the anneal operation anneals the dielectric layer and either the source region or the drain region, and wherein the work function layer provides a protection function to the at least a portion of the dielectric layer during the anneal operation.

Abstract: Embodiments are directed to a method of forming portions of a fin-type field effect transistor (FinFET). The method includes forming at least one fin, and forming a dielectric layer over at least a portion of the at least one fin. The method further includes forming a work function layer over at least a portion of the dielectric layer. The method further includes forming a source region or a drain region adjacent the at least one fin, and performing an anneal operation, wherein the anneal operation anneals the dielectric layer and either the source region or the drain region, and wherein the work function layer provides a protection function to the at least a portion of the dielectric layer during the anneal operation.

Abstract: Embodiments are directed to a method of forming portions of a fin-type field effect transistor (FinFET). The method includes forming at least one fin, and forming a dielectric layer over at least a portion of the at least one fin. The method further includes forming a work function layer over at least a portion of the dielectric layer. The method further includes forming a source region or a drain region adjacent the at least one fin, and performing an anneal operation, wherein the anneal operation anneals the dielectric layer and either the source region or the drain region, and wherein the work function layer provides a protection function to the at least a portion of the dielectric layer during the anneal operation.

Abstract: A method for forming an integrated circuit having a test macro using a multiple patterning lithography process (MPLP) is provided. The method includes forming an active area of the test macro having a first and second gate region during a first step of MPLP, and forming a first and second source/drain regions in the active area during a second step of the MPLP. The method also includes forming a first contact connected to the first gate region, a second contact connected to the second gate region, a third contact connected to the first source/drain region, and a forth contact connected to the source/drain region and determining if an overlay shift occurred between the first step and the second step of the step of the MPLP by testing for a short between one or more of the first contact, the second contact, the third contact, or the fourth contact.

Abstract: Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes forming fin structures in a selected area of a semiconductor substrate. The method includes covering the fin structures and the semiconductor substrate with a mask and forming a trench in the mask to define no more than two exposed fin structures in the selected area. Further, the method includes removing the exposed fin structures to provide the selected area with a desired number of fin structures.

Abstract: Disclosed herein are various methods of forming isolation structures on FinFETs and other semiconductor devices, and the resulting devices that have such isolation structures. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate, wherein the trenches define a fin for a FinFET device, forming a layer of insulating material in the trenches, wherein the layer of insulating material covers a lower portion of the fin but not an upper portion of the fin, forming a protective material on the upper portion of the fin, and performing a heating process in an oxidizing ambient to form a thermal oxide region on the covered lower portion of the fin.

Abstract: The present invention relates to a polymer supported reagent comprising a novel crosslinked mesoporous polymer, enabling a simple and easy production of an azoxy compound or an azo compound from an aromatic nitro compound, and a method of selectively reducing an aromatic nitro compound by using the same. The polymer supported reagent comprises a certain acrylamide mesoporous crosslinked polymer.

Abstract: Methods and structures for forming fully insulated finFETs beginning with a bulk semiconductor substrate are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first epitaxial layer may be sacrificial. A final gate structure may be formed around the fin structures, and the first epitaxial layer removed to form a void between a fin and the substrate. The void may be filled with an insulator to fully insulate the fin.

Abstract: A method for forming an integrated circuit having a test macro using a multiple patterning lithography process (MPLP) is provided. The method includes forming an active area of the test macro having a first and second gate region and forming a first and second source/drain regions in the active area. The method also includes forming a first contact connected to the first gate region, a second contact connected to the second gate region, a third contact connected to the first source/drain region, and a forth contact connected to the source/drain region. The method further includes determining if an overlay shift has occurred during the formation of the active area by testing for a short between one or more of the first contact, the second contact, the third contact, or the fourth contact.