Abstract: The present disclosure discloses a manufacturing method for a semiconductor apparatus, and relates to the field of semiconductor technologies. Forms of the method include: providing a semiconductor structure, where the semiconductor structure includes: a substrate and an interlayer dielectric layer on the substrate, where the interlayer dielectric layer has an opening for forming a gate; depositing a gate metal layer on the semiconductor structure to fill the opening, where the gate metal layer contains impurity; forming an impurity adsorption layer on the gate metal layer; performing a first annealing treatment on a semiconductor structure on which the impurity adsorption layer has been formed, to make the impurity in the gate metal layer enter the impurity adsorption layer; and removing the impurity adsorption layer after the first annealing treatment is performed.

Abstract: The present disclosure discloses a manufacturing method for a semiconductor apparatus, and relates to the field of semiconductor technologies. Forms of the method include: providing a semiconductor structure, where the semiconductor structure includes: a substrate and an interlayer dielectric layer on the substrate, where the interlayer dielectric layer has an opening for forming a gate; depositing a gate metal layer on the semiconductor structure to fill the opening, where the gate metal layer contains impurity; forming an impurity adsorption layer on the gate metal layer; performing a first annealing treatment on a semiconductor structure on which the impurity adsorption layer has been formed, to make the impurity in the gate metal layer enter the impurity adsorption layer; and removing the impurity adsorption layer after the first annealing treatment is performed.