Abstract: A transistor comprises a drain, a gate, a source, a body terminal and a body resistance. The drain is connected to a supply voltage line to receive a supply voltage. The gate is connected to a control voltage line to receive a control voltage. The source is connected to a input line to receive a input radio frequency signal. The body terminal is connected to the drain. The body resistance is disposed between the drain and the body terminal. By the foregoing configuration, the leakage current of the substrate is reduced and the threshold voltage of the transistor is reduced to conform to the present low power design.

Abstract: A transistor comprises a drain, a gate, a source, a body terminal and a body resistance. The drain is connected to a supply voltage line to receive a supply voltage. The gate is connected to a control voltage line to receive a control voltage. The source is connected to a input line to receive a input radio frequency signal. The body terminal is connected to the drain. The body resistance is disposed between the drain and the body terminal. By the foregoing configuration, the leakage current of the substrate is reduced and the threshold voltage of the transistor is reduced to conform to the present low power design.

Abstract: An input buffer is provided, which may include a noise sensor, a first follower and a subtractor. The common terminal of the first follower may be coupled to the noise sensor; a first bias current source may be coupled to the output of the first follower to generate a first noise current. The subtractor may be coupled to the first follower and the noise sensor. The noise sensor may sense the first noise current and then generate a noise cancellation current via the subtractor in order to cancel the noise generated by the first noise current.