Abstract: A charger includes: a charging circuit which receives an electric power from external equipment and charges a secondary battery; a control device which determines a power supply capability of the external equipment on the basis of the electric power that is supplied to the charging circuit from the external equipment; and a display device that displays the power supply capability of the external equipment, which has been determined by the control device.

Abstract: A charger includes: a charging circuit which receives an electric power from external equipment and charges a secondary battery; a control device which determines a power supply capability of the external equipment on the basis of the electric power that is supplied to the charging circuit from the external equipment; and a display device that displays the power supply capability of the external equipment, which has been determined by the control device.

Abstract: The present invention concerns a high vacuum in-situ refining method for high-purity and superhigh-purity materials and the apparatus thereof, characterized in heating the upper part and lower part of crucible separately using double-heating-wires diffusion furnace under vacuum, thereby forming the temperature profile which is high at upper part and low at lower part of crucible, or in reverse during different stages; then heating the crucible in two steps to remove impurities with high saturation vapor pressure and low saturation vapor pressure respectively in efficiency; and obtaining high-purity materials eventually. The whole procedure is isolated from atmosphere, reducing contamination upon stuff remarkably. The present invention could provide products with high-quality and high production capacity, which are stable in performance, therefore is reliable and free from contamination.

Abstract: There is provided a method of manufacturing high quality ZnO manufacturing film on silicon (111) substrate, including the following steps: removing silicon oxide on the surface of silicon (111) substrate; depositing metal monocrystal film having 1-10 nm thickness, such as Mg, Ca, Sr, Cd etc, at low temperature; oxiding the metal film at low temperature to obstain metal oxide monocrystal layer; depositing ZnO buffer layer at low temperature; depositing ZnO epitaxial layer at high temperature. The ZnO film is suitable for fabrication of high performance of photoelectron device.

Abstract: The present invention concerns a high vacuum in-situ refining method for high-purity and superhigh-purity materials and the apparatus thereof, characterized in heating the upper part and lower part of crucible separately using double-heating-wires diffusion furnace under vacuum, thereby forming the temperature profile which is high at upper part and low at lower part of crucible, or in reverse during different stages; then heating the crucible in two steps to remove impurities with high saturation vapor pressure and low saturation vapor pressure respectively in efficiency; and obtaining high-purity materials eventually. The whole procedure is isolated from atmosphere, reducing contamination upon stuff remarkably. The present invention could provide products with high-quality and high production capacity, which are stable in performance, therefore is reliable and free from contamination.