Patents by Inventor Jin-Feng Zhang

Jin-Feng Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SRAM and method of controlling the SRAM
    Patent number: 7876600
    Abstract: An SRAM and a forming method and a controlling method thereof are provided. The above-mentioned SRAM includes a tracking column, a normal column, a cell voltage control circuit and a cell voltage pull-down circuit. Each of the tracking column and the normal column includes a plurality of memory cells. The cell voltage control circuit is coupled to the tracking column and the normal column for connecting an operation voltage to the two columns before a write operation of the SRAM starts and for disconnecting the operation voltage from the two columns after the write operation starts. The cell voltage pull-down circuit is coupled to the two columns for pulling down the cell voltages of the two columns after the write operation starts and for ceasing pulling down the cell voltage of the normal column when the cell voltage of the tracking column drops down to a predetermined voltage.
    Type: Grant
    Filed: November 17, 2008
    Date of Patent: January 25, 2011
    Assignee: Aicestar Technology (SuZhou) Corporation
    Inventors: Jin-Feng Zhang, Jian-Bin Zheng, Zhao-Yong Zhang, Qi-Shuang Yao
  • SRAM AND FORMING METHOD AND CONTROLLING METHOD THEREOF
    Publication number: 20100124098
    Abstract: An SRAM and a forming method and a controlling method thereof are provided. The above-mentioned SRAM includes a tracking column, a normal column, a cell voltage control circuit and a cell voltage pull-down circuit. Each of the tracking column and the normal column includes a plurality of memory cells. The cell voltage control circuit is coupled to the tracking column and the normal column for connecting an operation voltage to the two columns before a write operation of the SRAM starts and for disconnecting the operation voltage from the two columns after the write operation starts. The cell voltage pull-down circuit is coupled to the two columns for pulling down the cell voltages of the two columns after the write operation starts and for ceasing pulling down the cell voltage of the normal column when the cell voltage of the tracking column drops down to a predetermined voltage.
    Type: Application
    Filed: November 17, 2008
    Publication date: May 20, 2010
    Applicant: AICESTAR TECHNOLOGY(SUZHOU) CORPORATION
    Inventors: Jin-Feng Zhang, Jian-Bin Zheng, Zhao-Yong Zhang, Qi-Shuang Yao