Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: A display device includes: a first substrate including a pixel area and a transmissive area; a thin-film transistor on the first substrate; a planarization layer on the thin-film transistor; a first light emitting electrode on the planarization layer; a bank covering a part of the first light emitting electrode; a light emitting layer on the first light emitting electrode; and a second light emitting electrode on the light emitting layer and the bank. The transmissive area includes a transmissive hole penetrating the bank and the planarization layer.

Abstract: A pellicle cleaning apparatus includes a stage to support a pellicle, a particle remover above the stage, the particle remover being configured to remove a particle from a first surface of a pellicle, and the particle remover including a cantilever, and an adhesive material on a bottom surface of the cantilever, and a pressure controller adjacent to the stage, the pressure controller being configured to control a pressure of a fluid on a second surface of the pellicle.

Abstract: A PVA brush cleaning method includes immersing a PVA brush in a cleaning solution containing an organic matter, thereby removing a siloxane compound in the PVA brush; and applying vibration to the PVA brush, thereby removing impurities in the PVA brush.

Abstract: A PVA brush cleaning method includes immersing a PVA brush in a cleaning solution containing an organic matter, thereby removing a siloxane compound in the PVA brush; and applying vibration to the PVA brush, thereby removing impurities in the PVA brush.

Abstract: Provided is a vapor phase self-assembled monolayer (SAM) coating apparatus having a small volume and reduced manufacturing costs. The apparatus includes: a chamber for providing space in which at least one substrate is mounted; one or more injection apparatuses, installed at a side of the chamber and in the form of an injector; and one or more supply units for supplying a liquid precursor into the precursor injection apparatus.

Abstract: A slurry for polishing a ruthenium layer comprises distilled water, sodium periodate (NaIO4), an abrasive and a pH controlling agent.

Abstract: A microsystem for separating serum from blood using a centrifuge is provided. The microsystem includes various chambers and channels. When blood is injected into the channels and centrifuged, serum and blood cells in the injected blood are distributed into different chambers. Thus, the serum can be separated from the blood.

Abstract: The present invention relates to a slurry for use in metal chemical-mechanical polishing (CMP) and a preparation method thereof. More particularly, the invention relates to a slurry for use in metal CMP, in which iron ions or divalent or higher valent metal ions are physico-chemically adsorbed on colloidal silica particles in the form of particles by a reduction, hydrolysis, impregnation or precipitation method, as well as a preparation method thereof. The slurry useful for metal CMP prepared according to the present invention has a uniform particle size distribution, and shows increased efficiencies as an oxidation catalyst and polishing slurry chemically adsorbed with metal particles, as compared to the prior metal CMP slurry distributed with metal ions. Also, the inventive slurry has long-term storage stability, since it does not show coagulation and precipitation phenomena even after it is stored for more than one year without a dispersant or a dispersion stabilizer.

Abstract: A slurry recycling system for use in a chemical mechanical polishing (CMP) apparatus for polishing a workpiece by using a slurry containing an abrasive, a pH agent and a deionized water is provided. The slurry recycling system includes a slurry collection tank for storing the slurry used in the CMP apparatus as a recyclable slurry; an ultra filter for separating, from the recyclable slurry, a fluid ingredient containing the pH agent and the deionized water and the abrasive to allow the abrasive to be reintroduced into the slurry collection tank; and a reverse osmosis filter for separating, from the fluid ingredient, the pH agent and the deionized water to allow the pH agent to be reintroduced into the slurry collection tank and to allow the deionized water to be discharged out.

Abstract: A slurry recycling system for use in a chemical mechanical polishing (CMP) apparatus for polishing a workpiece by using a slurry containing an abrasive, a pH agent and a deionized water is provided. The slurry recycling system includes a slurry collection tank for storing the slurry used in the CMP apparatus as a recyclable slurry; an ultra filter for separating, from the recyclable slurry, a fluid ingredient containing the pH agent and the deionized water and the abrasive to allow the abrasive to be reintroduced into the slurry collection tank; and a reverse osmosis filter for separating, from the fluid ingredient, the pH agent and the deionized water to allow the pH agent to be reintroduced into the slurry collection tank and to allow the deionized water to be discharged out.

Abstract: A semiconductor cleaning apparatus and a method of cleaning a wafer surface using the semiconductor cleaning apparatus are provided. In the semiconductor cleaning apparatus, wastewater is easily treated, the consumption of chemical usage is considerably reduced, and a contaminant removal efficiency on the wafer surface is maximized even at a room temperature or a low temperature by using a mixed chemical solution composed of an aqueous ammonium hydroxide and ozone as a cleaning solution in cleaning the wafer surface. In the method of cleaning the wafer surface, a cleaning solution is formed in a mixing tank by adding ozone to aqueous ammonium hydroxide. The cleaning solution is supplied into a cleaning bath through a filter for removing ozone bubble. Megasonic power is applied to the cleaning solution in the cleaning bath using a megasonic transducer. A wafer dipped in the cleaning solution which is at a room temperature to remove the contaminants on wafer surface.

Abstract: One embodiment of the instant invention is a method of preventing the formation of silicic acid on exposed silicon of an electronic device formed on a silicon wafer and having silicon features, the method comprising: removing a portion of oxide (step 302) formed on the silicon wafer thereby exposing at least some portion of the silicon substrate or the silicon features; cleaning the silicon wafer by subjecting the silicon wafer to an ozonated solution (step 304), preferably deionized water; and drying the silicon wafer (step 306). Preferably, a thin oxide is formed on the silicon wafer during the step of subjecting the wafer to the ozonated solution. The thin oxide is, preferably, on the order of approximately 6 to 20 .ANG. thick. After removing said portions of oxide and thereby exposing portions of said silicon wafer and/or silicon feature, the exposed silicon becomes hydrophobic.