Patents by Inventor Jin Guang CHENG

Jin Guang CHENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Wafer bonding methods and wafer-bonded structures
    Patent number: 10446519
    Abstract: A wafer bonding method includes providing a first wafer including a first wafer surface, forming a first metal layer on the first wafer surface, and forming a first annular retaining wall structure including a first annular retaining wall and a second annular retaining wall surrounded by the first annular retaining wall. The first metal layer is formed between the first annular retaining wall and the second annular retaining wall. The method includes providing a second wafer including a second wafer surface, forming a second metal layer on the second wafer surface, and forming a second annular retaining wall structure including a third annular retaining wall and a fourth annular retaining wall surrounded by the third annular retaining wall. The second metal layer is formed between the third annular retaining wall and the fourth annular retaining wall. The method further includes bonding the first metal layer to the second metal layer.
    Type: Grant
    Filed: March 13, 2018
    Date of Patent: October 15, 2019
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Jin Guang Cheng, Lin Bo Shi, Fu Cheng Chen
  • WAFER BONDING METHODS AND WAFER-BONDED STRUCTURES
    Publication number: 20180269178
    Abstract: A wafer bonding method includes providing a first wafer including a first wafer surface, forming a first metal layer on the first wafer surface, and forming a first annular retaining wall structure including a first annular retaining wall and a second annular retaining wall surrounded by the first annular retaining wall. The first metal layer is formed between the first annular retaining wall and the second annular retaining wall. The method includes providing a second wafer including a second wafer surface, forming a second metal layer on the second wafer surface, and forming a second annular retaining wall structure including a third annular retaining wall and a fourth annular retaining wall surrounded by the third annular retaining wall. The second metal layer is formed between the third annular retaining wall and the fourth annular retaining wall. The method further includes bonding the first metal layer to the second metal layer.
    Type: Application
    Filed: March 13, 2018
    Publication date: September 20, 2018
    Inventors: Jin Guang CHENG, Lin Bo SHI, Fu Cheng CHEN