Abstract: The present invention is directed to methods for generating one or more genetically modified cells by using a circular single stranded DNA (CiSSD) as a donor template and targeting genome modification. These methods include transferring one or more DNA polynucleotides into the cell for site-specific nuclease-mediated DNA repair and selecting one or more cells having the transferred DNA incorporated into the cell's genome.

Abstract: The present invention relates to a composition for preventing or treating asthma comprising a Pistacia weinmannifolia J. Poiss. ex Franch extract or a fraction thereof. The Pistacia weinmannifolia J. Poiss. ex Franch extract or the fraction thereof according to the present invention does not exhibit toxicity, inhibits the generation of NO, IL-4, IL-5, and IL-13 and the generation of reactive oxygen species in the bronchial tubes, and has significantly induced the alleviation of airway hyperresponsiveness, inhibition of the infiltration of inflammatory cells into the bronchial tubes, and reduction of inflammatory cells in bronchoalveolar lavage fluid in an ovalbumin-induced asthma mouse model. In addition, the Pistacia weinmannifolia J. Poiss.

Abstract: The present invention relates to a composition for preventing or treating asthma comprising a Pistacia weinmannifolia J. Poiss. ex Franch extract or a fraction thereof. The Pistacia weinmannifolia J. Poiss. ex Franch extract or the fraction thereof according to the present invention does not exhibit toxicity, inhibits the generation of NO, IL-4, IL-5, and IL-13 and the generation of reactive oxygen species in the bronchial tubes, and has significantly induced the alleviation of airway hyperresponsiveness, inhibition of the infiltration of inflammatory cells into the bronchial tubes, and reduction of inflammatory cells in bronchoalveolar lavage fluid in an ovalbumin-induced asthma mouse model. In addition, the Pistacia weinmannifolia J. Poiss.

Abstract: A semiconductor device fabrication system for carrying out a UV-bake on a photoresist pattern in the semiconductor device pattern formation, includes a photoresist coating unit coating a wafer with a specific photoresist; a developing unit forming a photoresist pattern on the wafer coated with the photoresist; and a cross-linking and flow baking unit for cross-linking the photoresist pattern and subsequently flow baking the cross-linked photoresist pattern, wherein the cross-linking and flow baking unit thermally stabilizes the photoresist pattern prior to flow baking.

Abstract: There are provided a semiconductor device fabrication system for carrying out a UV-bake on a photoresist pattern in the semiconductor device pattern formation, a method of forming a semiconductor device pattern using the same, and a photoresist formed thereby. The semiconductor device fabrication system includes a photoresist coating unit coating a wafer with a specific photoresist; a developing unit forming a photoresist pattern on the wafer coated with the photoresist; and a cross-linking unit cross-linking the photoresist pattern to provide a stabilized flow during the flow process for the photoresist pattern. The method of forming a semiconductor device pattern includes: coating a wafer with a photoresist; aligning a photo mask on the photoresist, and carrying out an exposure; forming a photoresist pattern on the wafer; carrying out a cross-linking of the photoresist pattern; and carrying out a flow bake for the photoresist pattern after the cross-linking.

Abstract: There are provided a semiconductor device fabrication system for carrying out a UV-bake on a photoresist pattern in the semiconductor device pattern formation, a method of forming a semiconductor device pattern using the same, and a photoresist formed thereby. The semiconductor device fabrication system includes a photoresist coating unit coating a wafer with a specific photoresist; a developing unit forming a photoresist pattern on the wafer coated with the photoresist; and a cross-linking unit cross-linking the photoresist pattern to provide a stabilized flow during the flow process for the photoresist pattern. The method of forming a semiconductor device pattern includes: coating a wafer with a photoresist; aligning a photo mask on the photoresist, and carrying out an exposure; forming a photoresist pattern on the wafer; carrying out a cross-linking of the photoresist pattern; and carrying out a flow bake for the photoresist pattern after the cross-linking.

Abstract: Methods of treating surfaces of wafers to be used in forming integrated circuit devices comprise applying dihydropyrane to the surfaces of the wafers wherein hydrophobicity is imparted to the surfaces. The applying steps are carried out prior to applying photoresists to the wafers.