Abstract: A ring-type wearable device is disclosed. The disclosed ring-type wearable device comprises: an outer ring member; an inner ring member separably inserted into the outer ring member; a sensor unit disposed in the outer ring member; and a control unit disposed in the outer ring member so as to be electrically connected to the sensor unit, wherein the sensor unit can maintain constant sensitivity in correspondence to the thickness of the inner ring member.

Abstract: A ring-type wearable device is disclosed. The disclosed ring-type wearable device comprises: an outer ring member; an inner ring member separably inserted into the outer ring member; a sensor unit disposed in the outer ring member; and a control unit disposed in the outer ring member so as to be electrically connected to the sensor unit, wherein the sensor unit can maintain constant sensitivity in correspondence to the thickness of the inner ring member.

Abstract: A lens actuating unit is provided. The lens actuating unit includes: a bobbin configured to accommodate a lens module at an inner side of the bobbin; a first coil unit disposed at the bobbin; a housing disposed at an outer side of the bobbin; and a magnet unit configured to move the first coil unit through electromagnetic interaction with the first coil unit, wherein the housing includes a hole formed by being recessed from an inner side to an outer side to accommodate the magnet unit.

Abstract: A tray includes a bottom portion including a plurality of protrusion patterns and a sidewall portion protruded from the bottom portion. The sidewall portion includes a first side portion provided with a groove defined therein and extending from the bottom portion, an upper surface extending from the first side portion to a direction away from the bottom portion in a plan view, and a second side portion extending from the upper surface and facing the first side portion.

Abstract: Provided is a semiconductor image sensor device. The image sensor device includes a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon nitride. The image sensor device includes a metal shield formed on the compressively-stressed layer. The metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a second compressively-stressed layer formed on the metal shield and the first compressively-stressed layer. The second compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the second compressively-stressed layer.

Abstract: Provided is a semiconductor image sensor device. The image sensor device includes a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon nitride. The image sensor device includes a metal shield formed on the compressively-stressed layer. The metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a second compressively-stressed layer formed on the metal shield and the first compressively-stressed layer. The second compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the second compressively-stressed layer.

Abstract: Provided is a semiconductor image sensor device. The image sensor device includes a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon nitride. The image sensor device includes a metal shield formed on the compressively-stressed layer. The metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a second compressively-stressed layer formed on the metal shield and the first compressively-stressed layer. The second compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the second compressively-stressed layer.

Abstract: Provided is a semiconductor image sensor device. The image sensor device includes a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon nitride. The image sensor device includes a metal shield formed on the compressively-stressed layer. The metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a second compressively-stressed layer formed on the metal shield and the first compressively-stressed layer. The second compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the second compressively-stressed layer.