Abstract: The present invention relates to a phosphor monomolecular compound, an organic transistor using same, and a water splitting and hydrogen production photocatalytic system using same. More specifically, the present invention comprises a water-soluble monomolecular compound including 1,5-naphtyridine-2,6-dione structure as a phosphor monomolecular compound.

Abstract: The present invention relate to an antenna apparatus, and more particularly, to an antenna apparatus including an antenna housing part formed in a form of an enclosure opened at a front side thereof, a board assembly disposed to be tightly attached to an internal space defined by the antenna housing part, and a plurality of antenna RF modules arranged on a front surface of the board assembly, in which the antenna housing part is divided into at least three components, and the components are manufactured and then coupled to one another to prevent distortion caused by thermal stress between upper and lower ends due to a difference in heat generation amount between heating elements mounted on the board assembly, thereby preventing the antenna housing part from being distorted by thermal stress caused by imbalance of heat generated from the heating elements, and solving a PIMD problem by preventing an unintended movement and clearance of the internal antenna RF modules.

Abstract: The present invention relates to an RF module for an antenna, and an antenna apparatus comprising same. In particular, the RF module comprises: a unit RF filter body arranged on the front surface of a main board; a radiating element unit disposed on the front surface of the unit RF filter body; and a reflector panel which is formed to be wider than the area of the vertical cross-section of the unit RF filter body while forming the front surface of the unit RF filter body, and grounds (GND) the radiating element unit, wherein a plurality of cavities opened outward to the left and right are respectively formed on the left and right sides of the unit RF filter body, each cavity comprises a left filter unit and a right filter unit which have a built-in resonator so as to perform different frequency filtering, and the left filter unit and the right filter unit are electrically connected to the radiating element unit by passing through the reflector panel.

Abstract: An exterior camera system and a cleaning method thereof are provided. The exterior camera system includes a base unit that is fixed to a vehicle, a housing rotatably coupled with the base unit, and an imaging device including a camera module and having at least a portion inserted into the housing to move in a longitudinal direction of the housing. A wiper is disposed on an inside surface of the housing to face the camera module, and a washer fluid nozzle is disposed adjacent to the wiper. A controller receives a video from the camera module to set a rotation angle of the housing based upon driving conditions of the vehicle and to adjust extension of the imaging device.

Abstract: A coating composition comprising a crosslinkable polyester polymer comprising an isocyanurate group and a crosslinkable group; a crosslinker; and an acid catalyst, wherein at least one of the crosslinkable polyester polymer and the crosslinker comprises an iodine-containing polymer.

Abstract: A super-steep switching device is provided. The super-steep switching device may include a substrate, a semiconductor channel on the substrate, a source electrode and a drain electrode, which are disposed on the semiconductor channel and spaced apart from each other, a gate electrode overlapping a portion of the semiconductor channel and not overlapping a remaining portion of the semiconductor channel, and an insulating layer disposed between the gate electrode and the semiconductor channel and covering an entire surface of the semiconductor channel.

Abstract: What is discussed is an interconnection member including (a) a main cable made of a flexible flat cable (FFC) including copper wires, (b) terminal parts branched from the main cable and electrically connected to at least one of the copper wires of the main cable, (c) a connecting part formed on one-side end of the main cable, and electrically and mechanically connected to a PCB and (d) at least one temperature sensing part branched from the main cable, wherein the at least one temperature sensing part comprises a first extending part extending from the main cable while sharing at least one copper wire of the copper wires of the main cable and a ceramic thermistor disposed on an end of the first extending part while being electrically connected to the first extending part.

Abstract: A super-steep switching device and an inverter device using the same are disclosed. The super-steep switching device includes a semiconductor channel disposed on a substrate and made of a semiconductor material having impact ionization characteristic; a source electrode and a drain electrode in contact with the semiconductor channel, wherein the source electrode and the drain electrode are disposed on the substrate and are spaced apart from each other; and a gate electrode disposed on the semiconductor channel so as to overlap only a portion of the semiconductor channel, wherein a top surface of the semiconductor channel includes a first area overlapping the gate electrode, and a second area non-overlapping the gate electrode, wherein a ratio of a length of the first area and a length of the second area is in a range of 1:0.1 to 0.4.

Abstract: A semiconductor device includes a substrate. A first channel pattern is disposed on the substrate. The first channel pattern includes a first side and a second side opposite to each other in a first direction. A first gate electrode is disposed on the first side of the first channel pattern. A first source/drain electrode is disposed on the first side of the first channel pattern. A second source/drain electrode is disposed on the second side of the first channel pattern. The first gate electrode overlaps the second source/drain electrode in the first direction.

Abstract: A negative differential resistance device includes a dielectric layer having a first surface and a second surface opposing the first surface, a first semiconductor layer that includes a first degenerated layer that is on the first surface of the dielectric layer and has a first polarity, a second semiconductor layer that includes a second degenerated layer that has a region that overlaps the first semiconductor layer and has a second polarity, a first electrode electrically connected to the first semiconductor layer, a second electrode electrically connected to the second semiconductor layer, and a third electrode on the second surface of the dielectric layer and which has a region overlapping at least one of the first semiconductor layer or the second semiconductor layer.

Abstract: A method of manufacturing a semiconductor device includes forming a channel layer on a substrate, forming a mask on the channel layer, surface-treating an exposed surface of the channel layer exposed from the mask, forming an electrode on the exposed surface of the channel layer, and removing the mask. The channel layer includes a two-dimensional material, and the surface-treating of the exposed surface of the channel layer includes surface-treating the exposed surface of the channel layer with HCl.

Abstract: Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that in a first aspect comprise a crosslinker component that comprises a structure of the following Formula (I):

Abstract: Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that in a first aspect comprise a crosslinker component that comprises a structure of the following Formula (I):

Abstract: Disclosed are methods of forming PN junction structures, methods of fabricating semiconductor devices using the same, and semiconductor devices fabricated by the same. The method of forming a PN junction structure includes: forming on a substrate a first material layer that includes first transition metal atoms and first chalcogen atoms, loading the first material layer into a process chamber and supplying a gas of second chalcogen atoms, and forming a second material layer by substituting the second chalcogen atoms for the first chalcogen atoms on a selected portion of the first material layer. The first material layer has one of n-type conductivity and p-type conductivity. The second material layer has the other of the n-type conductivity and the p-type conductivity.

Abstract: A negative differential resistance device includes a dielectric layer having a first surface and a second surface opposing the first surface, a first semiconductor layer that includes a first degenerated layer that is on the first surface of the dielectric layer and has a first polarity, a second semiconductor layer that includes a second degenerated layer that has a region that overlaps the first semiconductor layer and has a second polarity, a first electrode electrically connected to the first semiconductor layer, a second electrode electrically connected to the second semiconductor layer, and a third electrode on the second surface of the dielectric layer and which has a region overlapping at least one of the first semiconductor layer or the second semiconductor layer.

Abstract: Tandem solar cell configurations are provided where at least one of the cells is a metal chalcogenide cell. A four-terminal tandem solar cell configuration has two electrically independent solar cells stacked on each other. A two-terminal solar cell configuration has two electrically coupled solar cells (same current through both cells) stacked on each other. Carrier selective contacts can be used to make contact to the metal chalcogenide cell (s) to alleviate the troublesome Fermi level pinning issue. Carrier-selective contacts can also remove the need to provide doping of the metal chalcogenide. Doping of the metal chalcogenide can be provided by charge transfer. These two ideas can be practiced independently or together in any combination.

Abstract: A polymer comprising a first repeating unit including an amino group protected by an alkoxycarbonyl group; a second repeating unit including a nucleophilic group; and a third repeating unit including a crosslinkable group, wherein the first repeating unit, the second repeating unit, and the third repeating unit are different from each other.

Abstract: A photoresist underlayer composition, comprising: a first polymer comprising a crosslinkable group; a second polymer comprising: a first repeating unit comprising a repeating unit comprising a photoacid generator, and a second repeating unit comprising a hydroxy-substituted C1-30 alkyl group, a hydroxy-substituted C3-30 cycloalkyl group, or a hydroxy-substituted C6-30 aryl group; an acid catalyst; and a solvent.

Abstract: A photodetector includes a gate electrode extending in a first direction, a ferroelectric layer on the gate electrode and maintaining a state of polarization formed by a gate voltage applied to the gate electrode, a light absorbing layer on the ferroelectric layer and extending in a second direction intersecting the gate electrode, the light absorbing layer including a two-dimensional (2D) material of a layered structure, a source electrode on the ferroelectric layer and connected to a first end of the light absorbing layer, and a drain electrode on the ferroelectric layer and connected to the a second end of the light absorbing layer.

Abstract: New composition and methods are provided that include antireflective compositions that can exhibit enhanced etch rates in standard plasma etchants. Preferred antireflective coating compositions of the invention have decreased carbon content relative to prior compositions.