Patents by Inventor Jin-hwan Hahm

Jin-hwan Hahm has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6607954
    Abstract: A capacitor for a semiconductor memory device is fabricated by forming a mold layer on a semiconductor substrate that includes a peripheral circuit area and a cell array area which includes a plug in a buried contact hole. A hard mask layer pattern is formed on the mold layer. The mold layer is etched, using the hard mask layer pattern as an etch mask, to form a mold layer pattern. The hard mask layer pattern is then removed from the mold layer pattern or only partially etched back on the mold layer pattern. A capacitor lower electrode is formed along the walls of the buried contact hole and on a surface of the mold layer pattern. A capacitor dielectric layer is formed on the capacitor lower electrode and a capacitor upper electrode is formed on the capacitor dielectric layer.
    Type: Grant
    Filed: November 26, 2002
    Date of Patent: August 19, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-sic Jeon, Kyeong-koo Chi, Chang-jin Kang, Jin-hwan Hahm
  • Publication number: 20030124796
    Abstract: A capacitor for a semiconductor memory device is fabricated by forming a mold layer on a semiconductor substrate that includes a peripheral circuit area and a cell array area which includes a plug in a buried contact hole. A hard mask layer pattern is formed on the mold layer. The mold layer is etched, using the hard mask layer pattern as an etch mask, to form a mold layer pattern. The hard mask layer pattern is then removed from the mold layer pattern or only partially etched back on the mold layer pattern. A capacitor lower electrode is formed along the walls of the buried contact hole and on a surface of the mold layer pattern. A capacitor dielectric layer is formed on the capacitor lower electrode and a capacitor upper electrode is formed on the capacitor dielectric layer.
    Type: Application
    Filed: November 26, 2002
    Publication date: July 3, 2003
    Inventors: Jeong-sic Jeon, Kyeong-koo Chi, Chang-jin Kang, Jin-hwan Hahm
  • Patent number: 6143654
    Abstract: A capping film having a lower etch rate than a tungsten film is formed thereon and a photoresist layer is formed on the capping film. Preferably, the capping film is a titanium-based layer or an aluminum-based layer. After a photoresist pattern is formed by exposing and developing the photoresist film, the tungsten film is patterned by a dry etch method. During the etching of the tungsten film, the capping film reacts with the etching material to form a polymer which serves as a hard mask for the tungsten film. Preferably, the capping film also has a lower reflectivity at the exposing wavelength for the photoresist than the tungsten film, so the exposure of the photoresist may be controlled. Alternatively, or additionally, an anti-reflective film is provided between the capping film and the photoresist to further reduce the effect of the reflection of the tungsten film. Thus, patterning failures can be prevented.
    Type: Grant
    Filed: January 13, 1999
    Date of Patent: November 7, 2000
    Assignee: Samsung Electronics Co. Ltd.
    Inventors: Jin-hwan Hahm, Chang-jin Kang
  • Patent number: 5932492
    Abstract: A method for forming a capacitor structure includes the steps of forming a conductive layer in a substrate, and forming a dielectric layer on the conductive layer opposite the substrate. An aluminum layer is formed on the dielectric layer, and this aluminum layer is patterned so that portions of the dielectric layer are exposed. The patterned aluminum layer is then oxidized to form an alumina masking layer. The alumina masking layer can then be used to selectively etch portions of the dielectric and conductive layers exposed thereby. Related systems are also disclosed.
    Type: Grant
    Filed: October 23, 1996
    Date of Patent: August 3, 1999
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-hwan Hahm, Kyeong-koo Chi