Patents by Inventor Jin Hyeok KIM

Jin Hyeok KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240137511
    Abstract: Disclosed herein are a video decoding method and apparatus and a video encoding method and apparatus. In video encoding and decoding, multiple partition blocks are generated by splitting a target block. A prediction mode is derived for at least a part of the multiple partition blocks, among the multiple partition blocks, and prediction is performed on the multiple partition blocks based on the derived prediction mode. When prediction is performed on the partition blocks, information related to the target block may be used, and information related to an additional partition block, which is predicted prior to the partition block, may be used.
    Type: Application
    Filed: January 4, 2024
    Publication date: April 25, 2024
    Applicants: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, INDUSTRY-UNIVERSITY COOPERATION FOUNDATION KOREA AEROSPACE UNIVERSITY, HANBAT NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Jin-Ho LEE, Jung-Won KANG, Hyunsuk KO, Sung-Chang LIM, Dong-San JUN, Ha-Hyun LEE, Seung-Hyun CHO, Hui-Yong KIM, Hae-Chul CHOI, Dae-Hyeok GWON, Jae-Gon KIM, A-Ram BACK
  • Publication number: 20240136510
    Abstract: A positive electrode active material including a first lithium composite oxide particle including a secondary particle formed by aggregation of one or more primary particles, and a coating oxide occupying at least a part of at least one of surfaces of the secondary particle, grain boundaries between the primary particles, or surfaces of the primary particles, the positive electrode active material satisfying an equation of 1.3?a/b?3.0, wherein a represents a max peak intensity at 2theta=44.75° to 44.80° and b represents a max peak intensity at 2theta=45.3° to 45.6° in X-ray diffraction (XRD) analysis using Cu K? radiation.
    Type: Application
    Filed: May 21, 2023
    Publication date: April 25, 2024
    Inventors: Yu Gyeong CHUN, Moon Ho CHOI, Yoon Young CHOI, Jong Seung SHIN, Yong Hwan GWON, Jin Ho BAE, Ji Won KIM, Sang Hyeok KIM
  • Publication number: 20240099157
    Abstract: Variable resistance elements and semiconductor devices including the variable resistance elements are disclosed. In some implementations, a variable resistance element may include a variable resistance element may include a free layer having a variable magnetization direction that switches between different magnetization directions upon application of a magnetic field, a pinned layer having a fixed magnetization direction, and a tunnel barrier layer interposed between the free layer and the pinned layer and including a metal chalcogenide having a cubic crystal structure.
    Type: Application
    Filed: April 19, 2023
    Publication date: March 21, 2024
    Inventors: Jung Hyeok KWAK, Tae Yup KIM, Ku Youl JUNG, Jin Won JUNG
  • Patent number: 11936773
    Abstract: An encryption key management method includes: receiving a data registration request from a supplier terminal, determining a data identifier associated with the content data, encrypting a master key with a public key of the supplier terminal, and providing the supplier terminal with the master key encrypted with the public key of the supplier terminal, the data identifier, and a key update count value; receiving a subscription application related to the data identifier from a first subscriber terminal, encrypting the master key with a public key of the first subscriber terminal, and providing the first subscriber terminal with the master key encrypted with the public key of the first subscriber terminal and the key update count value; receiving encrypted content data encrypted with the symmetric key and a hash for the content data from the supplier terminal; and transmitting the encrypted content data and the hash to the first subscriber terminal.
    Type: Grant
    Filed: November 18, 2021
    Date of Patent: March 19, 2024
    Assignee: Penta Security Inc.
    Inventors: Jin Hyeok Oh, Sang Jun Lee, Myong Cheol Lim, Sang Gyoo Sim, Duk Soo Kim, Seok Woo Lee
  • Publication number: 20240072267
    Abstract: A separator assembly for a fuel cell and a fuel cell stack including the same, is uniformly capable of forming a surface pressure of a region where a reaction gas flows when a stack is stacked by adjusting a height and shape of a gasket line for each region in which the reaction gas flows.
    Type: Application
    Filed: April 17, 2023
    Publication date: February 29, 2024
    Applicants: Hyundai Motor Company, Kia Corporation
    Inventors: Jin Hyeok Yoo, Sun Do Shin, Kyeong Min Kim, Byung Gun Song
  • Patent number: 11917148
    Abstract: Disclosed herein are a video decoding method and apparatus and a video encoding method and apparatus. In video encoding and decoding, multiple partition blocks are generated by splitting a target block. A prediction mode is derived for at least a part of the multiple partition blocks, among the multiple partition blocks, and prediction is performed on the multiple partition blocks based on the derived prediction mode. When prediction is performed on the partition blocks, information related to the target block may be used, and information related to an additional partition block, which is predicted prior to the partition block, may be used.
    Type: Grant
    Filed: February 8, 2022
    Date of Patent: February 27, 2024
    Assignees: Electronics And Telecommunications Research Institute, Industry-University Cooperation Foundation Korea Aerospace University, Hanbat National University Industry-Academic Cooperation Foundation
    Inventors: Jin-Ho Lee, Jung-Won Kang, Hyunsuk Ko, Sung-Chang Lim, Dong-San Jun, Ha-Hyun Lee, Seung-Hyun Cho, Hui-Yong Kim, Hae-Chul Choi, Dae-Hyeok Gwon, Jae-Gon Kim, A-Ram Back
  • Patent number: 11914564
    Abstract: A Merkle tree-based data management method may comprise: aligning data into two-dimensional square matrix; calculating a hash value of each node of the two-dimensional square matrix; calculating hash values of each row of the two-dimensional square matrix; generating an additional column with nodes having the hash values of each row; calculating hash values of each column of the two-dimensional square matrix; generating an additional row with nodes having hash values of each column; and calculating a Merkle root by concatenating the hash values of the additional column and the hash values of the additional row.
    Type: Grant
    Filed: November 29, 2022
    Date of Patent: February 27, 2024
    Assignee: Penta Security Inc.
    Inventors: Jin Hyeok Oh, Keon Yun, Sun Woo Yun, Sang Min Lee, Jun Yong Lee, Sang Gyoo Sim, Tae Gyun Kim
  • Patent number: 9653655
    Abstract: A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.
    Type: Grant
    Filed: November 3, 2010
    Date of Patent: May 16, 2017
    Assignee: The Regents of the University of California
    Inventors: Daniel B. Thompson, Jacob J. Richardson, Steven P. DenBaars, Jin Hyeok Kim, MaryAnn E. Lange
  • Patent number: 8747706
    Abstract: A Cu—In—Zn—Sn—(Se,S)-based thin film for a solar cell and a preparation method thereof, and more particularly, to a Cu—In—Zn—Sn—(Se,S)-based thin film for a solar cell which can reduce an amount of In to be used and exhibit an excellent conversion efficiency and a preparation method thereof.
    Type: Grant
    Filed: November 8, 2010
    Date of Patent: June 10, 2014
    Assignee: Korea Institute of Energy Research
    Inventors: Jae-Ho Yun, Kyung-Hoon Yoon, Sejin Ahn, Jihye Gwak, Kee-Shik Shin, Kyoo-Ho Kim, Jin-Hyeok Kim
  • Publication number: 20130237085
    Abstract: Provided is a USB connector capable of sensing the insertion of USB devices such as a mobile phone, PDA, MP3 player and the like into the USB connector. The USB connector includes: a fixing body which is shaped as a quadrangle and made of metal material; an insulating member which is inserted and fixed within the fixing body, and one side of which has a power terminal and a data terminal connected to respective lead pins; and a switching pin which is elastically coupled to one side of the insulating member such that the switching pin is insulated from the fixing body, and which senses the insertion of a USB device by being brought into contact with the USB device inserted into the fixing body.
    Type: Application
    Filed: November 23, 2011
    Publication date: September 12, 2013
    Applicant: SMART POWER SOLUTIONS, INC.
    Inventors: Hyun-Jun Kim, Dae-Young Youn, Sang-Min Kim, Jin-Hyeok Kim
  • Publication number: 20130029450
    Abstract: The present invention provides a method for manufacturing a solar cell capable of suppressing volatilization of selenium and deformation of a substrate during a manufacturing process. According to the present invention, the method for manufacturing the solar cell comprises the steps of: providing a substrate; forming a rear electrode on the substrate; forming a precursor film for a light absorption film on the rear electrode; forming a light absorption film by progressing a crystallization process for the precursor film for the light absorption film; forming a buffer film on the light absorption film; forming a window film on the buffer film, and forming an anti-reflection film on the window film; and partially patterning the anti-reflection film, and forming a grid electrode in a patterned area. Said precursor film for the light absorption film includes Cu—Zn—Sn—S (Cu2ZnSnS4), CuInSe2, CuInS2, Cu(InGa)Se2, or Cu(InGa)S2.
    Type: Application
    Filed: April 19, 2011
    Publication date: January 31, 2013
    Applicant: Korea Institute of Industrial Technology
    Inventors: Chae Hwan Jeong, Jong Ho Lee, Ho Sung Kim, Jin Hyeok Kim, Suk Ho Lee
  • Publication number: 20120103420
    Abstract: A Cu-In-Zn-Sn-(Se,S)-based thin film for a solar cell and a preparation method thereof, and more particularly, to a Cu-In-Zn-Sn-(Se,S)-based thin film for a solar cell which can reduce an amount of In to be used and exhibit an excellent conversion efficiency and a preparation method thereof.
    Type: Application
    Filed: November 8, 2010
    Publication date: May 3, 2012
    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Jae-Ho Yun, Kyung-Hoon Yoon, Sejin Ahn, Jihye Gwak, Kee-Shik Shin, Kyoo-Ho Kim, Jin-Hyeok Kim
  • Publication number: 20110101414
    Abstract: A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.
    Type: Application
    Filed: November 3, 2010
    Publication date: May 5, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Daniel B. Thompson, Jacob J. Richardson, Steven P. DenBaars, Frederick F. Lange, MaryAnn E. Lange, Jin Hyeok Kim
  • Publication number: 20100206367
    Abstract: A method for fabricating a silicon nano wire, a solar cell including the silicon nano wire and a method for fabricating the solar cell. The solar cell includes a substrate, a first++-type poly-Si layer formed on the substrate, a first-type silicon nano wire layer including a first-type silicon nano wire grown from the first++-type poly-Si layer, an intrinsic layer formed on the substrate having the first-type silicon nano wire layer, and a second-type doping layer formed on the intrinsic layer.
    Type: Application
    Filed: October 23, 2009
    Publication date: August 19, 2010
    Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
    Inventors: Chaehwan JEONG, Minsung JEON, Jin Hyeok KIM, Hang Ju KO, Suk Ho LEE