Abstract: The present disclosure relates to a movable protector for fixing a high-voltage wire used for a vehicle, which improves an operation of fastening a high-voltage connector using a movable clip absorbing a wiring slack length of, and maintaining a path for, the high-voltage wire.

Abstract: A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.

Abstract: A Cu—In—Zn—Sn—(Se,S)-based thin film for a solar cell and a preparation method thereof, and more particularly, to a Cu—In—Zn—Sn—(Se,S)-based thin film for a solar cell which can reduce an amount of In to be used and exhibit an excellent conversion efficiency and a preparation method thereof.

Abstract: Provided is a USB connector capable of sensing the insertion of USB devices such as a mobile phone, PDA, MP3 player and the like into the USB connector. The USB connector includes: a fixing body which is shaped as a quadrangle and made of metal material; an insulating member which is inserted and fixed within the fixing body, and one side of which has a power terminal and a data terminal connected to respective lead pins; and a switching pin which is elastically coupled to one side of the insulating member such that the switching pin is insulated from the fixing body, and which senses the insertion of a USB device by being brought into contact with the USB device inserted into the fixing body.

Abstract: The present invention provides a method for manufacturing a solar cell capable of suppressing volatilization of selenium and deformation of a substrate during a manufacturing process. According to the present invention, the method for manufacturing the solar cell comprises the steps of: providing a substrate; forming a rear electrode on the substrate; forming a precursor film for a light absorption film on the rear electrode; forming a light absorption film by progressing a crystallization process for the precursor film for the light absorption film; forming a buffer film on the light absorption film; forming a window film on the buffer film, and forming an anti-reflection film on the window film; and partially patterning the anti-reflection film, and forming a grid electrode in a patterned area. Said precursor film for the light absorption film includes Cu—Zn—Sn—S (Cu2ZnSnS4), CuInSe2, CuInS2, Cu(InGa)Se2, or Cu(InGa)S2.

Abstract: A Cu-In-Zn-Sn-(Se,S)-based thin film for a solar cell and a preparation method thereof, and more particularly, to a Cu-In-Zn-Sn-(Se,S)-based thin film for a solar cell which can reduce an amount of In to be used and exhibit an excellent conversion efficiency and a preparation method thereof.

Abstract: A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.

Abstract: A method for fabricating a silicon nano wire, a solar cell including the silicon nano wire and a method for fabricating the solar cell. The solar cell includes a substrate, a first++-type poly-Si layer formed on the substrate, a first-type silicon nano wire layer including a first-type silicon nano wire grown from the first++-type poly-Si layer, an intrinsic layer formed on the substrate having the first-type silicon nano wire layer, and a second-type doping layer formed on the intrinsic layer.