Abstract: Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.

Abstract: An image sensor includes a substrate having an active pixel sensor region defined therein, a plurality of first conductivity type photodiodes formed in the active pixel sensor region and a first conductivity-type first deep well formed in the active pixel sensor region in a location which does not include the plurality of the first conductivity-type photodiodes. Moreover, the first deep well is electrically connected to a positive voltage.

Abstract: Anatomical information is identified from a medical image and/or used for controlling a medical diagnostic imaging system, such as an ultrasound system. To identify anatomical information from a medical image, a processor applies a multi-class classifier. The anatomical information is used to set an imaging parameter of the medical imaging system. The setting or identification may be used in combination or separately.

Abstract: In one aspect, an image sensor is provided which includes an interlayer insulation film formed over a substrate including a light receiving device, a color filter formed over the interlayer insulation film, a protection film having a flat top face formed over the interlayer insulation film and the color filter, a buffer film having a convex top face formed over the protection film, and a microlens formed on the convex top face of the buffer film. The microlens has a refractive index which is greater than a refractive index of the buffer film and has a convex top face and a concave bottom face, where the concave bottom face of the microlens contacts the convex top face of the buffer film.

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.

Abstract: In a photodiode and a method of formation thereof, a reflecting member that reflects light incident to a separating region toward light-absorption parts. A plurality of light-absorption parts are separated by the separating region, and the reflecting member formed on the separating region has at least one sloped surface capable of reflecting the light incident to the separating region in a concentrated manner toward the light-absorption parts.