Patents by Inventor Jin Hyuck Jeon

Jin Hyuck Jeon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11952442
    Abstract: The present disclosure provides a method for preparing a vinyl chloride-based polymer, the method including a step of injecting an ionizable normal salt and polymerizing a vinyl chloride monomer in the presence of one or more emulsifiers and a polymerization initiator, wherein the ionizable normal salt includes a carbonate metal salt or a sulfite metal salt, and the ionizable normal salt is continuously injected in an amount of 70 to 1200 ppm based on the total weight of the vinyl chloride monomer when a polymerization conversion rate is in a range of 0% to 20%. The method capable of preparing a vinyl chloride-based polymer suitable as an eco-friendly material, while not affecting the rate of polymerization reaction and decreasing the generation amount of total volatile organic compounds by controlling the injection time, injection amount and kind of the ionizable normal salt, is provided.
    Type: Grant
    Filed: October 28, 2019
    Date of Patent: April 9, 2024
    Assignee: LG CHEM, LTD.
    Inventors: Jin Hyuck Ju, Hyun Min Lee, Hyun Kyou Ha, Kun Ji Kim, Kwang Jin Lee, Yang Jun Jeon, Jae Hyun Park
  • Patent number: 8030158
    Abstract: Disclosed is a method for fabricating a contact in a semiconductor device, including: obtaining a pattern layout including bit lines arranged across a cell matrix region of a semiconductor substrate, cell storage node contacts arranged to pass through a portion of a first interlayer insulation layer between the bit lines, and dummy storage node contacts additionally arranged in an end of the arrangement of the cell storage node contacts; and forming the cell storage node contacts and the dummy storage node contacts using the pattern layout.
    Type: Grant
    Filed: November 23, 2009
    Date of Patent: October 4, 2011
    Assignee: Hynix Semiconductor
    Inventors: Chun Soo Kang, Jin Hyuck Jeon
  • Publication number: 20100330791
    Abstract: Disclosed is a method for fabricating a contact in a semiconductor device, including: obtaining a pattern layout including bit lines arranged across a cell matrix region of a semiconductor substrate, cell storage node contacts arranged to pass through a portion of a first interlayer insulation layer between the bit lines, and dummy storage node contacts additionally arranged in an end of the arrangement of the cell storage node contacts; and forming the cell storage node contacts and the dummy storage node contacts using the pattern layout.
    Type: Application
    Filed: November 23, 2009
    Publication date: December 30, 2010
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Chun Soo Kang, Jin Hyuck Jeon