Patents by Inventor Jin-Hyuck Yu

Jin-Hyuck Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10009030
    Abstract: An integrated circuit embedded in a plug of a universal serial bus (USB) 3.1 type-C cable assembly is disclosed. The integrated circuit includes a first pin connected to an operation transmission line through which an operation voltage is transmitted, a second pin connected to a configuration channel (CC) line, a first resistor connected to the first pin, a ground line, and a switching circuit configured to connect the first resistor and the ground line using a channel voltage supplied to the second pin when the operation voltage is not applied, and disconnect the first resistor from the ground line based on the operation voltage.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: June 26, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Je Kook Kim, Jin Hyuck Yu, You So Cheon
  • Publication number: 20180123594
    Abstract: An integrated circuit embedded in a plug of a universal serial bus (USB) 3.1 type-C cable assembly is disclosed. The integrated circuit includes a first pin connected to an operation transmission line through which an operation voltage is transmitted, a second pin connected to a configuration channel (CC) line, a first resistor connected to the first pin, a ground line, and a switching circuit configured to connect the first resistor and the ground line using a channel voltage supplied to the second pin when the operation voltage is not applied, and disconnect the first resistor from the ground line based on the operation voltage.
    Type: Application
    Filed: December 28, 2017
    Publication date: May 3, 2018
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Je Kook KIM, Jin Hyuck YU, You So CHEON
  • Patent number: 9871524
    Abstract: An integrated circuit embedded in a plug of a universal serial bus (USB) 3.1 type-C cable assembly is disclosed. The integrated circuit includes a first pin connected to an operation transmission line through which an operation voltage is transmitted, a second pin connected to a configuration channel (CC) line, a first resistor connected to the first pin, a ground line, and a switching circuit configured to connect the first resistor and the ground line using a channel voltage supplied to the second pin when the operation voltage is not applied, and disconnect the first resistor from the ground line based on the operation voltage.
    Type: Grant
    Filed: March 23, 2016
    Date of Patent: January 16, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Je Kook Kim, Jin Hyuck Yu, You So Cheon
  • Publication number: 20160308527
    Abstract: An integrated circuit embedded in a plug of a universal serial bus (USB) 3.1 type-C cable assembly is disclosed. The integrated circuit includes a first pin connected to an operation transmission line through which an operation voltage is transmitted, a second pin connected to a configuration channel (CC) line, a first resistor connected to the first pin, a ground line, and a switching circuit configured to connect the first resistor and the ground line using a channel voltage supplied to the second pin when the operation voltage is not applied, and disconnect the first resistor from the ground line based on the operation voltage.
    Type: Application
    Filed: March 23, 2016
    Publication date: October 20, 2016
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Je Kook KIM, Jin Hyuck YU, You So CHEON
  • Patent number: 8710818
    Abstract: A power converter includes a power converting unit and a driving circuit. The power converting unit generates a DC output voltage based on a pull up driving signal, a pull down driving signal, and a DC input voltage. The driving circuit compensates for an inductor peak current, and performs in a pulse-frequency-modulation (PFM) mode and a pulse-width-modulation (PWM) mode to generate the pull-up driving signal and the pull-down driving signal based on the DC output voltage and the compensated inductor peak current. The power converter performs a mode transition between the PFM and PWM modes at a uniform load current, even when a magnitude of the DC output voltage varies.
    Type: Grant
    Filed: June 16, 2011
    Date of Patent: April 29, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-Hyuck Yu, Dong-Jin Keum
  • Patent number: 8624573
    Abstract: A power converter includes a zero-current detector having an adjustable offset voltage. The power converter includes a power converting unit and a switch driving circuit. The power converting unit generates a DC output voltage based on a pull-up driving signal, a pull-down driving signal and a DC input voltage. The switch driving circuit generates a first detection voltage signal based on the DC output voltage. The switch driving circuit includes a zero-current detector configured to adjust an offset voltage based on the first detection voltage signal and generate a zero-current detecting signal based on the offset voltage. The offset voltage and the zero-current detecting signal are associated with a current in the power converting unit. The switch driving circuit also includes a pulse-frequency modulating circuit configured to perform a pulse-frequency modulation (PFM) to generate the pull-up driving signal and the pull-down driving signal based on the zero-current detecting signal.
    Type: Grant
    Filed: May 26, 2011
    Date of Patent: January 7, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-Hyuck Yu, Dong-Jin Keum, Hyoung-Seok Oh
  • Patent number: 8373500
    Abstract: A voltage biasing circuit includes a metal-oxide-semiconductor (MOS) transistor, a voltage control circuit controlling a voltage between a gate and a source of the MOS transistor to operate the MOS transistor in a sub-threshold range, and a capacitor connected to the MOS transistor. The voltage biasing circuit may further include a voltage buffer connected between the voltage control circuit and the MOS transistor.
    Type: Grant
    Filed: January 8, 2010
    Date of Patent: February 12, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Jin Hyuck Yu
  • Publication number: 20110309815
    Abstract: A power converter includes a power converting unit and a driving circuit. The power converting unit generates a DC output voltage based on a pull up driving signal, a pull down driving signal, and a DC input voltage. The driving circuit compensates for an inductor peak current, and performs in a pulse-frequency-modulation (PFM) mode and a pulse-width-modulation (PWM) mode to generate the pull-up driving signal and the pull-down driving signal based on the DC output voltage and the compensated inductor peak current. The power converter performs a mode transition between the PFM and PWM modes at a uniform load current, even when a magnitude of the DC output voltage varies.
    Type: Application
    Filed: June 16, 2011
    Publication date: December 22, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-Hyuck Yu, Dong-Jin Keum
  • Publication number: 20110291632
    Abstract: A power converter includes a zero-current detector having an adjustable offset voltage. The power converter includes a power converting unit and a switch driving circuit. The power converting unit generates a DC output voltage based on a pull-up driving signal, a pull-down driving signal and a DC input voltage. The switch driving circuit generates a first detection voltage signal based on the DC output voltage. The switch driving circuit includes a zero-current detector configured to adjust an offset voltage based on the first detection voltage signal and generate a zero-current detecting signal based on the offset voltage. The offset voltage and the zero-current detecting signal are associated with a current in the power converting unit.
    Type: Application
    Filed: May 26, 2011
    Publication date: December 1, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-Hyuck Yu, Dong-Jin Keum, Hyoung-Seok Oh
  • Publication number: 20100177232
    Abstract: A voltage biasing circuit includes a metal-oxide-semiconductor (MOS) transistor, a voltage control circuit controlling a voltage between a gate and a source of the MOS transistor to operate the MOS transistor in a sub-threshold range, and a capacitor connected to the MOS transistor. The voltage biasing circuit may further include a voltage buffer connected between the voltage control circuit and the MOS transistor.
    Type: Application
    Filed: January 8, 2010
    Publication date: July 15, 2010
    Inventor: Jin Hyuck YU
  • Patent number: 7626470
    Abstract: A voltage-controlled oscillator (VCO) for a multi-band receiver, and a radio-frequency (RF) communication apparatus having the same. The VCO includes at least two fine tune branches, that is, a main fine tune branch and an auxiliary fine tune branch. The main fine tune branch includes at least one variable capacitor whose capacitance varies according to a tuning voltage. The auxiliary fine tune branch includes at least one varactor that operates either as a variable capacitor whose capacitance varies according to the tuning voltage or a fixed capacitor regardless of the tuning voltage, based on an operating frequency band. Accordingly, it is possible to prevent phase noise from increasing by varying the gain of the VCO according to the frequency band of an oscillation signal from the VCO.
    Type: Grant
    Filed: April 18, 2007
    Date of Patent: December 1, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Jin-Hyuck Yu
  • Patent number: 7449973
    Abstract: A semiconductor circuit for reducing flicker noise includes a negative-conductance generator and a body bias voltage supplying circuit. The negative-conductance generator includes a pair of cross-coupled field effect transistors in order to generate negative-conductance, wherein each field effect transistor includes a body. In order to remove flicker noise generated by the pair of the field effect transistors, the body bias voltage supplying circuit supplies a body bias voltage to the body of each of the pair of the field effect transistors so that a forward bias voltage is supplied to the body and source of each of the pair of the field effect transistors. The field effect transistors are preferably NMOS transistors or CMOS transistors. The semiconductor circuit is used in a voltage controlled oscillator (VCO) or a phase-locked loop (PLL).
    Type: Grant
    Filed: May 23, 2006
    Date of Patent: November 11, 2008
    Inventor: Jin-Hyuck Yu
  • Patent number: 7449970
    Abstract: A frequency fine tuning circuit for use in a voltage-controlled oscillator is provided. The frequency tuning circuit includes a first varactor, a second varactor and a center bias unit. The second varactor is coupled to the first varactor at a first node. The center bias unit maintains a node voltage of the first node at a constant bias voltage level.
    Type: Grant
    Filed: May 2, 2006
    Date of Patent: November 11, 2008
    Assignee: Samsung Electronics, Co., Ltd.
    Inventors: Jin-Hyuck Yu, Je-Kwang Cho
  • Publication number: 20080157889
    Abstract: A voltage controlled oscillator includes an L-C tank circuit configured to have a first capacitance that increases as a power supply voltage increases, and a capacitance compensation circuit configured to be connected in parallel with both terminals of the L-C tank circuit and to have a second capacitance that decreases as the power supply voltage increases. The voltage controlled oscillator maintains the sum of the first capacitance and the second capacitance constant regardless of the fluctuation of the power supply voltage, thereby maintaining a stable oscillation frequency.
    Type: Application
    Filed: June 18, 2007
    Publication date: July 3, 2008
    Inventor: Jin Hyuck Yu
  • Publication number: 20080036550
    Abstract: A voltage-controlled oscillator (VCO) for a multi-band receiver, and a radio-frequency (RF) communication apparatus having the same. The VCO includes at least two fine tune branches, that is, a main fine tune branch and an auxiliary fine tune branch. The main fine tune branch includes at least one variable capacitor whose capacitance varies according to a tuning voltage. The auxiliary fine tune branch includes at least one varactor that operates either as a variable capacitor whose capacitance varies according to the tuning voltage or a fixed capacitor regardless of the tuning voltage, based on an operating frequency band. Accordingly, it is possible to prevent phase noise from increasing by varying the gain of the VCO according to the frequency band of an oscillation signal from the VCO.
    Type: Application
    Filed: April 18, 2007
    Publication date: February 14, 2008
    Inventor: Jin-Hyuck Yu
  • Patent number: 7298227
    Abstract: For use in a multi-band wireless communication system, a local oscillator includes a voltage-controlled oscillator that generates an oscillating signal in response to a control signal. A local oscillating signal generator includes buffers and frequency dividers for generating from the oscillating signal a plurality of frequency signals having different frequencies. A switching circuit selects one of the frequency signals, and a phase locked loop generates the control signal from the selected frequency signal.
    Type: Grant
    Filed: June 3, 2005
    Date of Patent: November 20, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Jin-Hyuck Yu
  • Publication number: 20070046386
    Abstract: A semiconductor circuit for reducing flicker noise includes a negative-conductance generator and a body bias voltage supplying circuit. The negative-conductance generator includes a pair of cross-coupled field effect transistors in order to generate negative-conductance, wherein each field effect transistor includes a body. In order to remove flicker noise generated by the pair of the field effect transistors, the body bias voltage supplying circuit supplies a body bias voltage to the body of each of the pair of the field effect transistors so that a forward bias voltage is supplied to the body and source of each of the pair of the field effect transistors. The field effect transistors are preferably NMOS transistors or CMOS transistors. The semiconductor circuit is used in a voltage controlled oscillator (VCO) or a phase-locked loop (PLL).
    Type: Application
    Filed: May 23, 2006
    Publication date: March 1, 2007
    Inventor: Jin-Hyuck Yu
  • Publication number: 20070040625
    Abstract: A frequency fine tuning circuit for use in a voltage-controlled oscillator is provided. The frequency tuning circuit includes a first varactor, a second varactor and a center bias unit. The second varactor is coupled to the first varactor at a first node. The center bias unit maintains a node voltage of the first node at a constant bias voltage level.
    Type: Application
    Filed: May 2, 2006
    Publication date: February 22, 2007
    Inventors: Jin-Hyuck Yu, Je-Kwang Cho
  • Publication number: 20050282512
    Abstract: For use in a multi-band wireless communication system, a local oscillator includes a voltage-controlled oscillator that generates an oscillating signal in response to a control signal. A local oscillating signal generator includes buffers and frequency dividers for generating from the oscillating signal a plurality of frequency signals having different frequencies. A switching circuit selects one of the frequency signals, and a phase locked loop generates the control signal from the selected frequency signal.
    Type: Application
    Filed: June 3, 2005
    Publication date: December 22, 2005
    Inventor: Jin-Hyuck Yu