Patents by Inventor Jin Hyuk OH

Jin Hyuk OH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10474263
    Abstract: A display device and a method of manufacturing the same are disclosed. In one aspect, the display device includes a display area and a non-display area adjacent to the display area, a first substrate including a touch sensor in the display area and a touch sensor pad in the non-display area, and a second substrate opposing the first substrate, the second substrate including a pixel in the display area and a connection pad in the non-display area. An interlayer in the display area is provided between the first substrate and the second substrate, a plurality of conductive balls electrically connects the touch sensor pad and the connection pad, and an inter-bar in the non-display area is provided between the first substrate and the second substrate. The inter-bar is disposed adjacent to the connection pad, and the conductive balls have an average diameter that is greater than the height of the inter-bar.
    Type: Grant
    Filed: January 11, 2017
    Date of Patent: November 12, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Hyun Soo Jung, Jin Woo Park, Ho Youn Kim, Hyun Chul Oh, Ung Soo Lee, Jun Young Lee, Su Hyuk Choi
  • Publication number: 20190341358
    Abstract: A method of forming a semiconductor device, includes: forming a design pattern on a substrate, wherein the design pattern protrudes from the substrate; forming a filling layer on the substrate, wherein the filling layer at least partially covers the design pattern; forming a polishing resistance pattern adjacent to the design pattern in the filling layer using a laser irradiation process and/or an ion implantation process; and removing the filling layer using a chemical mechanical polishing (CMP) process to expose the design pattern.
    Type: Application
    Filed: January 21, 2019
    Publication date: November 7, 2019
    Inventors: YANG HEE LEE, Jong Hyuk Park, Jin Woo Bae, Choong Seob Shin, Hyo Jin Oh, Bo Un Yoon, Il Young Yoon, Hee Sook Cheon
  • Publication number: 20190319195
    Abstract: The present application provides a hetero-cyclic compound capable of significantly enhancing lifespan, efficiency, electrochemical stability and thermal stability of an organic light emitting device, and an organic light emitting device containing the hetero-cyclic compound in an organic compound layer.
    Type: Application
    Filed: July 6, 2017
    Publication date: October 17, 2019
    Applicant: Heesung Material Ltd.
    Inventors: Gi-Back LEE, Han-Kook OH, Yong-Geun JUNG, Jun-Tae MO, Won-Jang JEONG, Jin-Seok CHOI, Dae-Hyuk CHOI, Joo-Dong LEE
  • Publication number: 20190273123
    Abstract: A display device includes a first substrate, a second substrate comprising a pixel portion configured to display an image, and a dummy portion spaced from the pixel portion, a side of the dummy portion being exposed to the outside, and an interlayer between the first substrate and the second substrate, wherein the pixel portion and the dummy portion each include multiple layers, and at least one layer of the pixel portion and at least one layer of the dummy portion include a same material.
    Type: Application
    Filed: May 17, 2019
    Publication date: September 5, 2019
    Inventors: Ung Soo Lee, Ho Youn Kim, Jin Woo Park, Hyun Chul Oh, Jun Young Lee, Hyun Soo Jung, Su Hyuk Choi
  • Patent number: 10392344
    Abstract: The present invention relates to a method for labelling fluorine-18, which is a radioisotope, and more specifically, to a method for labelling a [18F]fluoride in a method for preparing an organic [18F]fluoro compound by reacting an alkyl halide or an alkyl sulfonate with a [18F]fluoride, wherein a [18F]fluoride supported on a quaternary alkyl ammonium polymer support is eluted using a solution containing a metal salt or a quaternary ammonium salt with an adjusted pH, and a base is not additionally used. The present invention enables a labeling reaction without an additional base after precisely reflecting the concentration of a base absolutely necessary for the nucleophilic substitution of a [18F]fluoride or eluting a [18F]fluoride using a [18F]fluoride eluent with an adjusted pH, thereby stably obtaining a [18F]fluoride-labelled compound in a high yield, and is thus useful for production of fluorine-18-labelled radioactive medical supplies.
    Type: Grant
    Filed: December 21, 2012
    Date of Patent: August 27, 2019
    Assignee: THE ASAN FOUNDATION
    Inventors: Sang Ju Lee, Seung Jun Oh, Dae Hyuk Moon, Jin Sook Ryu, Jae Seung Kim, Jong Jin Lee
  • Patent number: 10381577
    Abstract: The present application provides a hetero-cyclic compound which may significantly improve the lifetime, efficiency, electrochemical stability, and thermal stability of an organic light emitting device, and an organic light emitting device in which the hetero-cyclic compound is contained in an organic compound layer.
    Type: Grant
    Filed: July 27, 2016
    Date of Patent: August 13, 2019
    Assignee: HEESUNG MATERIAL LTD.
    Inventors: Geon-Yu Park, Han-Kook Oh, Yun-Ji Lee, Jae-Yeol Ma, Dong-Jun Kim, Jin-Seok Choi, Dae-Hyuk Choi, Joo-Dong Lee
  • Publication number: 20190233398
    Abstract: The present application provides a hetero-cyclic compound capable of significantly enhancing lifespan, efficiency, electrochemical stability and thermal stability of an organic light emitting device, and an organic light emitting device containing the hetero-cyclic compound in an organic compound layer.
    Type: Application
    Filed: July 6, 2017
    Publication date: August 1, 2019
    Applicant: HEESUNG MATERIAL LTD.
    Inventors: Han-Kook OH, Jun-Tae MO, Yong-Geun JUNG, Won-Jang JEONG, Jin-Seok CHOI, Dae-Hyuk CHOI, Joo-Dong LEE
  • Patent number: 10340316
    Abstract: A display device includes a first substrate, a second substrate comprising a pixel portion configured to display an image, and a dummy portion spaced from the pixel portion, a side of the dummy portion being exposed to the outside, and an interlayer between the first substrate and the second substrate, wherein the pixel portion and the dummy portion each include multiple layers, and at least one layer of the pixel portion and at least one layer of the dummy portion include a same material.
    Type: Grant
    Filed: September 12, 2016
    Date of Patent: July 2, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Ung Soo Lee, Ho Youn Kim, Jin Woo Park, Hyun Chul Oh, Jun Young Lee, Hyun Soo Jung, Su Hyuk Choi
  • Patent number: 10312301
    Abstract: A display device includes a first substrate including a first area and a second area, light emitting elements arranged in the first area, connecting pads arranged in the second area, a thin film encapsulation layer arranged on the light emitting elements, a second substrate including a third area and a fourth area, sensing pads arranged in the fourth area, a touch sensor layer including sensing electrodes arranged in the third area and sensing lines connected between the sensing electrodes and the sensing pads, an interlayer arranged between the thin film encapsulation layer and the touch sensor layer, and a conductive member connected between the connecting pads and the sensing pads.
    Type: Grant
    Filed: April 9, 2018
    Date of Patent: June 4, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Su Hyuk Choi, Jin Woo Park, Ho Youn Kim, Hyun Chul Oh, Ung Soo Lee, Jun Young Lee, Hyun Soo Jung
  • Publication number: 20190134234
    Abstract: The present disclosure relates to a composition for stabilizing the radiochemical purity of [18F]fluoro-dopa by inhibiting the formation of impurities during a predetermined time period, and a method for preparing the same. The composition according to the present disclosure includes: [18F]fluoro-dopa; ethanol in a concentration of 5% to 30%(v/v) relative to the total composition; and a buffer having a pKa value of 6 to 8.1 at 25° C., in which the composition stabilizes the radiochemical purity of the [18F]fluoro-dopa by inhibiting the formation of impurities during a predetermined time period.
    Type: Application
    Filed: July 22, 2016
    Publication date: May 9, 2019
    Applicant: CI-CO HEALTHCARE Co., Ltd.
    Inventors: Sang Ju LEE, Seung Jun OH, Jin Sook RYU, Jae Seung KIM, Dae Hyuk MOON, Jong Jin LEE
  • Patent number: 10168474
    Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: January 1, 2019
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Gyungock Kim, Hyundai Park, In Gyoo Kim, Sang Hoon Kim, Ki Seok Jang, Sang Gi Kim, Jiho Joo, Yongseok Choi, Hyuk Je Kwon, Jaegyu Park, Sun Ae Kim, Jin Hyuk Oh, myung joon Kwack
  • Publication number: 20170309589
    Abstract: Provided are a semiconductor device and a method for manufacturing the same. The semiconductor device according to an embodiment of the inventive concept includes a first semiconductor chip having a recess portion in one surface thereof; a first adhesion pattern filled within the recess portion of the first semiconductor chip; and a second semiconductor chip disposed on the first adhesion pattern. The second semiconductor chip may represent improved heat dissipation characteristics.
    Type: Application
    Filed: February 2, 2017
    Publication date: October 26, 2017
    Inventors: Myungjoon KWACK, Gyungock KIM, Jaegyu PARK, Jin Hyuk OH, Jiho JOO
  • Publication number: 20170269298
    Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
    Type: Application
    Filed: May 30, 2017
    Publication date: September 21, 2017
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Gyungock KIM, Hyundai PARK, In Gyoo KIM, Sang Hoon KIM, Ki Seok JANG, Sang Gi KIM, Jiho JOO, Yongseok CHOI, Hyuk Je KWON, Jaegyu PARK, Sun Ae KIM, Jin Hyuk OH, myung joon KWACK
  • Publication number: 20170261705
    Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
    Type: Application
    Filed: May 30, 2017
    Publication date: September 14, 2017
    Applicant: Electronics and Telecommunications Research Instit ute
    Inventors: Gyungock KIM, Hyundai PARK, In Gyoo KIM, Sang Hoon KIM, Ki Seok JANG, Sang Gi KIM, Jiho JOO, Yongseok CHOI, Hyuk Je KWON, Jaegyu PARK, Sun Ae KIM, Jin Hyuk OH, Myung Joon KWACK
  • Patent number: 9728657
    Abstract: Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: August 8, 2017
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jiho Joo, Gyungock Kim, Myungjoon Kwack, Sang Hoon Kim, Sun Ae Kim, In Gyoo Kim, Jaegyu Park, Jin Hyuk Oh, Ki Seok Jang
  • Patent number: 9690042
    Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
    Type: Grant
    Filed: October 24, 2013
    Date of Patent: June 27, 2017
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Gyungock Kim, Hyundai Park, In Gyoo Kim, Sang Hoon Kim, Ki Seok Jang, Sang Gi Kim, Jiho Joo, Yongseok Choi, Hyuk Je Kwon, Jaegyu Park, Sun Ae Kim, Jin Hyuk Oh, Myung Joon Kwack
  • Publication number: 20160211402
    Abstract: Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.
    Type: Application
    Filed: July 29, 2015
    Publication date: July 21, 2016
    Inventors: Jiho JOO, Gyungock KIM, Myungjoon KWACK, Sang Hoon KIM, Sun Ae KIM, In Gyoo KIM, Jaegyu PARK, Jin Hyuk OH, Ki Seok JANG
  • Patent number: 9171996
    Abstract: Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.
    Type: Grant
    Filed: July 23, 2013
    Date of Patent: October 27, 2015
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Gyungock Kim, Sang Hoon Kim, Ki Seok Jang, In Gyoo Kim, Jin Hyuk Oh, Sun Ae Kim
  • Publication number: 20140346532
    Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
    Type: Application
    Filed: October 24, 2013
    Publication date: November 27, 2014
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Gyungock KIM, Hyundai PARK, In Gyoo KIM, Sang Hoon KIM, Ki Seok JANG, Sang Gi KIM, Jiho JOO, Yongseok CHOI, Hyuk Je KWON, Jaegyu PARK, Sun Ae KIM, Jin Hyuk OH, Myung Joon KWACK
  • Publication number: 20140048772
    Abstract: Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.
    Type: Application
    Filed: July 23, 2013
    Publication date: February 20, 2014
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Gyungock KIM, Sang Hoon KIM, Ki Seok JANG, In Gyoo KIM, Jin Hyuk OH, Sun Ae KIM