Abstract: The present invention relates to an automatic real-time quantitative amplification system which can perform analysis of various biological samples, and more particularly to an automatic real-time quantitative amplification system in which a plurality of decks for respectively accommodating biological samples are put in a deck storing/transferring device, whereby it is possible to automatically analyze an amount or existence of a target substance containing a target nucleic acid in the biologic sample, such as a particular gene, a particular, a particular pathogenic bacterium and a particular protein, by amplifying the target nucleic acid purified by some processes of purification, purification after culture, or purification after reaction of the target substance contained in the bio-logical sample and then checking an amount of the amplified target nucleic acid.

Abstract: Example embodiments may provide phase-change material layers and a method of forming a phase-change material layer and devices using the same by generating a plasma including helium and/or argon in a reaction chamber, forming a first material layer on the object by introducing a first source gas including a first material, forming a first composite material layer on the object by introducing a second source gas including a second material into the reaction chamber, forming a third material layer on the first composite material layer by introducing a third source gas including a third material, and forming a second composite material layer on the first composite material layer by introducing a fourth source gas including a fourth material. Example embodiment phase-change material layers including carbon may be more easily and/or quickly formed at lower temperatures under the helium/argon plasma environment by providing the source gases for various feeding times.

Abstract: The phase change memory device includes a first electrode and a second electrode and a first phase change material pattern and a second phase change material pattern interposed between the first electrode and the second electrode, wherein the first and second phase change material patterns have respectively different electrical characteristics.

Abstract: Example embodiments may provide phase-change material layers and a method of forming a phase-change material layer and devices using the same by generating a plasma including helium and/or argon in a reaction chamber, forming a first material layer on the object by introducing a first source gas including a first material, forming a first composite material layer on the object by introducing a second source gas including a second material into the reaction chamber, forming a third material layer on the first composite material layer by introducing a third source gas including a third material, and forming a second composite material layer on the first composite material layer by introducing a fourth source gas including a fourth material. Example embodiment phase-change material layers including carbon may be more easily and/or quickly formed at lower temperatures under the helium/argon plasma environment by providing the source gases for various feeding times.