Patents by Inventor Jin-Ji KIM

Jin-Ji KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FLASH MULTI-LEVEL THRESHOLD DISTRIBUTION SCHEME
    Publication number: 20120087193
    Abstract: A threshold voltage distribution scheme for multi-level Flash cells where an erase threshold voltage and at least one programmed threshold voltage lie in an erase voltage domain. Having at least one programmed threshold voltage in the erase voltage domain reduces the Vread voltage level to minimize read disturb effects, while extending the life span of the multi-level Flash cells as the threshold voltage distance between programmed states is maximized. The erase voltage domain can be less than 0V while a program voltage domain is greater than 0V. Accordingly, circuits for program verifying and reading multi-level Flash cells having a programmed threshold voltage in the erase voltage domain and the program voltage domain use negative and positive high voltages.
    Type: Application
    Filed: December 16, 2011
    Publication date: April 12, 2012
    Applicant: MOSAID TECHNOLOGIES INCORPORATED
    Inventor: Jin-Ji KIM
  • FLASH MULTI-LEVEL THRESHOLD DISTRIBUTION SCHEME
    Publication number: 20110007564
    Abstract: A threshold voltage distribution scheme for multi-level Flash cells where an erase threshold voltage and at least one programmed threshold voltage lie in an erase voltage domain. Having at least one programmed threshold voltage in the erase voltage domain reduces the Vread voltage level to minimize read disturb effects, while extending the life span of the multi-level Flash cells as the threshold voltage distance between programmed states is maximized. The erase voltage domain can be less than 0V while a program voltage domain is greater than 0V. Accordingly, circuits for program verifying and reading multi-level Flash cells having a programmed threshold voltage in the erase voltage domain and the program voltage domain use negative and positive high voltages.
    Type: Application
    Filed: September 17, 2010
    Publication date: January 13, 2011
    Applicant: MOSAID TECHNOLOGIES INCORPORATED
    Inventor: Jin-Ji KIM