Abstract: A semiconductor device includes a substrate with a conductive pattern. A semiconductor die is electrically connected to the substrate and both the semiconductor die and the substrate are at least partially covered by a package body. In some examples, through-mold vias are formed in the package body to provide electrical signal paths from an exterior surface thereof to the conductive pattern of the substrate. In some examples, through-mold vias are included in the package body to provide electrical signal paths between the semiconductor die and an exterior surface of the package body. In some examples, an interposer is electrically connected to the through-mold vias and may be covered by the package body and/or disposed in spaced relation thereto. In some examples, the interposer may not be electrically connected to the through-mold vias but may have one or more semiconductor dies of the semiconductor device electrically connected thereto.

Abstract: Disclosed is a miniaturized battery module in which a space except for a space of a battery cell is minimized and the number of components is reduced. The miniaturized battery module includes a cell assembly configured by assembling a plurality of battery cells, an upper frame inserted into an outer upper surface of the cell assembly, a lower frame inserted into an outer lower surface of the cell assembly and fastened to the upper frame, and first and second endplates fastened to two opposite ends of the cell assembly and configured to fix the plurality of battery cells. In this case, at least two or more of the plurality of the battery cells are arranged side by side, and the upper frame and the lower frame are fastened by welding.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 ?m or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.

Abstract: A semiconductor manufacturing equipment may include a process chamber for treating a substrate; a front-end module including a first transfer robot, wherein the first transfer robot may be configured to transport the substrate received in a container; a transfer chamber between the front-end module and the process chamber, wherein the transfer chamber may be configured to load or unload the substrate into or out of the process chamber; and a cassette capable of receiving a replaceable component capable of being used in the process chamber. The front-end module may include a seat plate configured to move in a sliding manner so as to retract or extend into or from the front-end module. The cassette may be configured to be loaded into the front-end module while the cassette is seated on the seat plate.

Abstract: An optical imaging system includes a first lens, a second lens, a third lens, a fourth lens, and a fifth lens sequentially disposed along an optical axis from an object-side surface of the first lens toward an imaging plane of an image sensor, wherein 3.5?TTL/IMG HT, f1+f2|<2.0 mm, and 0.7?L1S1es/L1S1el<1.0 are satisfied, where TTL is a distance along the optical axis from the object-side surface of the first lens to the imaging plane of the image sensor, IMG HT is one-half of a diagonal length of the imaging plane of the image sensor, f1 is a focal length of the first lens, f2 is a focal length of the second lens, L1S1el is a maximum effective radius of the object-side surface of the first lens, and L1S1es is a minimum effective radius of the object-side surface of the first lens.

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

Abstract: An optical imaging system includes a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, and a seventh lens, disposed in order from an object side to an imaging plane. One or any combination of the first lens to the seventh lens are formed of glass. One or both surfaces of one or more of the first lens to the seventh lens are aspherical. A pair of lenses, among the first lens to the seventh lens, allows paraxial areas opposing each other to be bonded to each other.

Abstract: A display device comprises a first pixel including a first emission area, a second pixel including a second emission area spaced apart from the first emission area in a first direction, and a bank partitioning the first emission area and the second emission area, wherein the first pixel includes a first alignment electrode, a second alignment electrode, and a third alignment electrode sequentially located, spaced apart from each other in the first direction, and overlapping with the first emission area, first light-emitting elements above, and overlapping with, the first alignment electrode and the second alignment electrode, second light-emitting elements above, and overlapping with, the second alignment electrode and the third alignment electrode, and a dummy electrode between the first emission area and the second emission area, and overlapping with the bank.

Abstract: Disclosed is an organic light emitting diode (OLED) comprising at least one emitting unit that includes a first compound, which may have a bipolar property, a second compound, which may have a delayed fluorescent property, and a third compound, which may have narrow FWHM (full width at half maximum) and a fluorescent property, and an organic light emitting device including the OLED. Further the compounds have defined relative LUMO and HOMO energies. The OLED and the organic light emitting device has enhanced luminous efficiency, color purity and luminous life span as well as low driving voltage.

Abstract: Provided is a compound of Chemical Formula 1: wherein X is O or S; L1 and L2 each independently is a direct bond or a substituted or unsubstituted arylene group; X1 is N or CR1, X2 is N or CR2, X3 is N or CR3, and at least two of X1 to X3 are N; R1 to R3 each independently is hydrogen, deuterium, or a substituted or unsubstituted alkyl, aryl or heteroaryl group; Ar1 and Ar2 each independently is hydrogen, deuterium, or a substituted or unsubstituted alkyl, aryl or heteroaryl group; positions at which ?is substituted with ?are asymmetric; m1, m2, n1 and n2 each independently is 0 or 1; and m1+m2 is 1, and n1+n2 is 1, and an organic light emitting device comprising the same.

Abstract: Provided is a heterocyclic compound of Chemical Formula 1: wherein: L is a substituted or unsubstituted tricyclic or higher divalent heterocyclic group including two or more heteroatoms selected from among N, O and S; Ar is a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heteroaryl group; and R1 to R14 are the same as or different from each other, and each independently is hydrogen, a nitrile group, a halogen group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heteroaryl group, or bond to adjacent groups to form at least one substituted or unsubstituted aromatic ring; and an organic light emitting device including the same.

Abstract: The present disclosure relates to an organic compound having the following structure of Chemical Formula 1, and an organic light emitting diode (OLED) and an organic light emitting device including the organic compound. The organic compound is a bipolar organic compound having a p-type moiety and an n-type moiety. The organic compound has a high excited triplet energy level, a wide energy bandgap and excellent thermal stability. When the organic compound is introduced into an emitting material layer (EML) of the OLED, holes and electrons are recombined in the whole area of the EML, thus the OLED can improve its luminous efficiency and luminous lifetime.

Abstract: A compound of Chemical Formula 1, and an organic light emitting device including the same.

Abstract: The present application relates to a compound of Chemical Formula 1 and an organic light emitting device including the same.

Abstract: An organic compound including a carbazolyl moiety having a p-type property, a dibenzofuranyl or dibenzothiophenyl moiety having an n-type property and further substituted with a dibenzofuranyl or dibenzothiophenyl moiety is disclosed. An organic light emitting diode and an organic light emitting device including the organic compound are also disclosed. The organic compound has excellent thermal resistance and a high energy level due to the combination of fused hetero aromatic rings. Therefore, the organic light emitting diode and the organic light emitting device including the organic compound show excellent luminous efficiency and an improved luminous lifetime.

Abstract: Disclosed is an entropy generation apparatus, which includes a detector that detects particles emitted from the radiation source to generate a detection signal; a preamplifier that amplifies the detection signal to generate an amplified signal; a filter that filters the amplified signal to generate a filtered signal; and a comparator that generates a pulse based on a result of comparing the filtered signal with a threshold value.

Abstract: The present specification provides a heterocyclic compound of Chemical Formula 1, and an organic light emitting device comprising the same. The heterocyclic compound used as a material of an organic material layer of an organic light emitting device provides enhanced efficiency, low driving voltage, and enhanced lifetime properties of the organic light emitting device.

Abstract: An additive for a photoresist, a photoresist composition for a EUV including the same, and a method for manufacturing a semiconductor device using the same, the additive including a copolymer that includes a first repeating unit represented by the following Chemical Formula 1-1, and a second repeating unit represented by the following Chemical Formula 2, wherein a molar ratio of the first repeating unit to the second repeating unit is 7:3 to 2:8,

Abstract: Disclosed is an organic light emitting diode (OLED) includes a first emitting material layer, which includes a first compound and a second compound, and a second emitting material layer, which includes a third compound and a fourth compound, wherein a HOMO energy level of the first compound is higher than a HOMO energy level of the second compound and a HOMO energy level of the third compound is lower than a HOMO energy level of the fourth compound, and an organic light emitting device having the OLED. The OLED and the organic light emitting device disclosed have enhanced luminous efficiency, color purity and luminous life span as well as low driving voltage by applying the emitting material layer.