Abstract: A memory system according to the present embodiment includes a memory controller including a first data bus and a first address bus. A memory part includes a second data bus and a second address bus. A bridge part is capable of receiving an address from the memory controller via the first data bus, and outputs the address via the first address bus to the memory part.

Abstract: A memory system according to the present embodiment includes a memory controller including a first data bus and a first address bus. A memory part includes a second data bus and a second address bus. A bridge part is capable of receiving an address from the memory controller via the first data bus, and outputs the address via the first address bus to the memory part.

Abstract: A semiconductor storage device according to the present embodiment comprises a memory cell array comprising a plurality of memory cells, the memory cell array including a first region and a second region. An internal controller is configured to perform writing of data to the memory cells or reading of data from the memory cells. An input/output part is configured to receive the data written to the memory cells or to output the data read from the memory cells. A mode controller is configured to operate a first region in a first mode and a second region in a second mode.

Abstract: A semiconductor storage device according to the present embodiment comprises a memory cell array including a plurality of memory cells. An output part is configured to output data based on a strobe signal. An error correction part is configured to correct an error in first data read from the memory cell array. The output part fixes level of the strobe signal when outputting the first data, if the number of error bits of the first data exceeds a first number, he error correction part being capable of correcting error of the first number in the first data.

Abstract: A nonvolatile semiconductor memory comprises a memory cell array in which a plurality of memory cell transistors capable of storing data according to a threshold voltage; a row decoder having a plurality of transfer MOS transistors connected at first ends to a plurality of word lines which are respectively connected to control gate electrodes of the plurality of memory cell transistors; and a word line driver which selects supplied voltages and supplies the selected voltages to second ends of the plurality of transfer MOS transistors. The nonvolatile semiconductor memory further comprises a voltage generation circuit which supplies voltages to the word line driver; and a control circuit which controls operation of the row decoder, the word line driver and the voltage generation circuit.

Abstract: According to one embodiment, a semiconductor device comprises a circuit portion, wells, and dummy wells. A circuit portion is formed on an upper surface of a semiconductor substrate of a first conductivity type. The wells are of a second conductivity type different from the first conductivity type. Each of wells is formed in the semiconductor substrate on an upper surface side, constitutes the circuit portion, and functions as an element. The dummy wells are of the second conductivity type. Each of the dummy wells is formed in the semiconductor substrate on the upper surface side, does not constitute the circuit portion, and does not function as an element.

Abstract: A memory system includes: a plurality of banks each including a memory cell array and a sense amplifier; a buffer circuit electrically connected to the plurality of banks; a switch circuit configured to switch on and off an electrical connection between the buffer circuit and each of the plurality of banks an interface electrically connected to the buffer circuit; and a controller configured to control the plurality of banks, the buffer circuit, the switch circuit and the interface, wherein for reading data held in the memory cell array by outputting the data to the interface in 5 clock cycles, the controller is configured to control the switch circuit in order that the switch circuit electrically connects a selected one of the banks to the buffer circuit upon the lapse of 1.5 clock cycles after a clock is inputted into the selected bank.

Abstract: A memory system includes a memory cell array including a plurality of memory cells electrically connected to pairs of bit lines once a word line is activated; latch portions connected to respective pairs of bit lines; a sense amplifier connected to the latch portions; and a control circuit configured to control the latch portions for a reading operation in order that data in all memory cells connected to the word line, once selected, come to be held in the corresponding latch portions as a group.

Abstract: A nonvolatile semiconductor memory comprises a memory cell array in which a plurality of memory cell transistors capable of storing data according to a threshold voltage; a row decoder having a plurality of transfer MOS transistors connected at first ends to a plurality of word lines which are respectively connected to control gate electrodes of the plurality of memory cell transistors; and a word line driver which selects supplied voltages and supplies the selected voltages to second ends of the plurality of transfer MOS transistors. The nonvolatile semiconductor memory further comprises a voltage generation circuit which supplies voltages to the word line driver; and a control circuit which controls operation of the row decoder, the word line driver and the voltage generation circuit.

Abstract: According to one embodiment, a semiconductor device includes a NAND flash memory, an SRAM, and a controller. The NAND flash memory includes a plurality of blocks with a plurality of memory cells and a decoder which selects the blocks. The NAND flash memory is capable of erasing data in a plurality of the blocks simultaneously during a multi-block erase operation. The decoder stores bad-block information at least during a read operation and a write operation and stores information on a plurality of erase target blocks during the multi-block erase operation. The SRAM stores the information on the erase target blocks. The controller reads information on the erase target blocks from the SRAM to set the information into the decoder in a multi-block erase operation.

Abstract: 1. A semiconductor storage device has a first MOS transistor connected at a first end thereof to a power supply and diode-connected; a second MOS transistor connected in parallel with the first MOS transistor; a memory cell connected between the second end of the first MOS transistor and ground, the memory cell capable of adjusting a current flowing through the memory cell; a third MOS transistor connected at a first end thereof to the power supply, and diode-connected; a fourth MOS transistor connected in parallel with the third MOS transistor; a fifth MOS transistor connected between the second end of the fourth MOS transistor and the ground and supplied at a gate thereof with the first reference voltage; and an amplifier circuit which compares the sense voltage with the comparison voltage, and which outputs a comparison result signal depending upon a result of the comparison.

Abstract: A semiconductor memory capable of storing and reading data in a memory cell for holding the data corresponding to a threshold voltage has a reference current generating circuit having a reference current generating section and an amplifier section.

Abstract: A semiconductor memory capable of storing and reading data in a memory cell for holding the data corresponding to a threshold voltage has a reference current generating circuit having a reference current generating section and an amplifier section.

Abstract: A non-volatile semiconductor memory device comprises a redundant memory cell to store address data of a defect cell in a memory cell array. A first decoder circuit is given a first drive voltage to provide a control signal to the redundant memory cell. A dummy memory cell has a threshold voltage corresponding to the redundant memory cell. A second decoder circuit is given a second drive voltage corresponding to the first drive voltage to provide a control signal to the dummy memory cell. A comparator circuit compares data to be read out of the dummy memory cell with data actually read out of the dummy memory cell.

Abstract: A non-volatile semiconductor memory device comprises a redundant memory cell to store address data of a defect cell in a memory cell array. A first decoder circuit is given a first drive voltage to provide a control signal to the redundant memory cell. A dummy memory cell has a threshold voltage corresponding to the redundant memory cell. A second decoder circuit is given a second drive voltage corresponding to the first drive voltage to provide a control signal to the dummy memory cell. A comparator circuit compares data to be read out of the dummy memory cell with data actually read out of the dummy memory cell.

Abstract: A reference voltage generating circuit generates reference voltage and outputs the thus generated reference voltage from an output terminal thereof. A voltage generating circuit lowers external power supply voltage according to the reference voltage supplied from the reference voltage generating circuit to output internal power supply voltage from an output terminal thereof. A transistor has a current path connected between a terminal to which the external power supply voltage is supplied and the output terminal of the voltage generating circuit or between the terminal to which the external power supply voltage is supplied and the output terminal of the reference voltage generating circuit and a gate supplied with constant voltage and has negative threshold voltage.

Abstract: A reference voltage generating circuit generates reference voltage and outputs the thus generated reference voltage from an output terminal thereof. A voltage generating circuit lowers external power supply voltage according to the reference voltage supplied from the reference voltage generating circuit to output internal power supply voltage from an output terminal thereof. A transistor has a current path connected between a terminal to which the external power supply voltage is supplied and the output terminal of the voltage generating circuit or between the terminal to which the external power supply voltage is supplied and the output terminal of the reference voltage generating circuit and a gate supplied with constant voltage and has negative threshold voltage.