Abstract: Provided is a method of manufacturing a semiconductor package, the method including providing an insulating substrate having a conductive via pattern, forming a first anti-scratch protection layer on a bottom surface of the insulating substrate, forming a first plated pattern and a first passivation pattern on a top surface of the insulating substrate, removing the first anti-scratch protection layer, forming a second anti-scratch protection layer on the top surface of the insulating substrate to cover the first plated pattern and the first passivation pattern, forming a second plated pattern and a second passivation pattern on the bottom surface of the insulating substrate, and removing the second anti-scratch protection layer.

Abstract: A doorbell apparatus and a method of controlling power supply to a doorbell apparatus are provided. The doorbell apparatus may include a power supplier, a battery device charged with power from the power supplier device, a doorbell controller driven using the power from the power supplier device or the power charged in the battery device, and a power supply controller configured to control supply of power to the doorbell controller according to whether the power is input from the power supplier device.

Abstract: Provided is an interfacial polymerization process for preparation of a highly permeable thin film composite membrane, which can be used for nanofiltration, forward osmosis, or reverse osmosis, particularly for use with brackish water or seawater. The process includes contacting a porous support membrane with an aqueous phase containing a polyamine to form a coated support membrane, and applying an organic phase containing a polyfunctional acid halide to the coated support membrane to interfacially polymerize the polyamine and the polyfunctional acid halide to form a discrimination layer of a thin film composite membrane, where the aqueous and/or organic phases include a flux-enhancing additive and a boron rejection-enhancing additive that includes a biguanide compound, dicarbonate compound, pentathiodicarbonate compound, or salts thereof. Also provided are the membranes prepared by the methods and reverse osmosis modules containing the membranes.

Abstract: Provided is an interfacial polymerization process for preparation of a highly permeable thin film composite membrane, which can be used for nanofiltration, forward osmosis, or reverse osmosis, particularly for use with brackish water or seawater. The process includes contacting a porous support membrane with an aqueous phase containing a polyamine to form a coated support membrane, and applying an organic phase containing a polyfunctional acid halide to the coated support membrane to interfacially polymerize the polyamine and the polyfunctional acid halide to form a discrimination layer of a thin film composite membrane, where the aqueous and/or organic phases include a flux-enhancing additive and a boron rejection-enhancing additive that includes a biguanide compound, dicarbonate compound, pentathiodicarbonate compound, or salts thereof. Also provided are the membranes prepared by the methods and reverse osmosis modules containing the membranes.

Abstract: An aromatic ring-containing polymer, an underlayer composition including the same, and associated methods, the aromatic ring-containing polymer including a group represented by one of the following Chemical Formulae 1-1, 1-2, 2-1, and 2-2:

Abstract: A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formulae 1, 2 and 3:

Abstract: An aromatic ring-containing polymer, a polymer mixture, an antireflective hardmask composition, and a method for patterning a material on a substrate, the aromatic ring-containing polymer including at least one aromatic ring-containing polymer represented by Formulae 1, 2, or 3.

Abstract: An antireflective hardmask composition includes an organic solvent, an initiator, and at least one polymer represented by Formulae A, B, or C as set forth in the specification.

Abstract: A polymer composition includes an aromatic ring-containing polymer represented by Formula 1: wherein m and n satisfy the relations 1?m<190, 0?n<190, and 1?m+n<190.

Abstract: A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formulae 1, 2 and 3:

Abstract: An aromatic ring-containing polymer, an underlayer composition including the same, and associated methods, the aromatic ring-containing polymer including a group represented by one of the following Chemical Formulae 1-1, 1-2, 2-1, and 2-2:

Abstract: A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formula 1, 2 and 3:

Abstract: An antireflective hardmask composition includes an organic solvent, an initiator, and at least one polymer represented by Formulae A, B, or C as set forth in the specification.

Abstract: Provided herein are hardmask compositions for resist underlayer films, wherein according to some embodiments of the invention, hardmask compositions include a polymer prepared by the reaction of a compound of Formula 1 with a compound of Formula 2 (R)m—Si—(OCH3)4-m??(2) in the presence of a catalyst, wherein R is a monovalent organic group, n is an integer from 3 to 20, and m is 1 or 2; and an organic solvent. Also provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the invention. Further provided are semiconductor integrated circuit devices produced by a method embodiment of the invention.

Abstract: An antireflective hardmask composition includes an organic solvent, an initiator, and at least one polymer represented by Formulae A, B, or C as set forth in the specification.

Abstract: Provided herein, according to some embodiments of the invention, are organosilane polymers prepared by reacting organosilane compounds including (a) at least one compound of Formula I Si(OR1)(OR2)(OR3)R4??(I) wherein R1, R2 and R3 may each independently be an alkyl group, and R4 may be —(CH2)nR5, wherein R5 may be an aryl or a substituted aryl, and n may be 0 or a positive integer; and (b) at least one compound of Formula II Si(OR6)(OR7)(OR8)R9??(II) wherein R6, R7 and R8 may each independently an alkyl group or an aryl group; and R9 may be an alkyl group. Also provided are hardmask compositions including an organosilane compound according to an embodiment of the invention, or a hydrolysis product thereof. Methods of producing semiconductor devices using a hardmask compostion according to an embodiment of the invention, and semiconductor devices produced therefrom, are also provided.

Abstract: Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided.

Abstract: A naphthalene-backbone polymer represented by Formula 1: wherein n and m are independently at least 1 and less than about 190, R1 is a hydrogen, a hydroxyl, a hydrocarbon group of about 10 carbons or less, or a halogen, R2 is methylene or includes an aryl linking group, R3 is a conjugated diene group, and R4 is an unsaturated dienophile group.

Abstract: An antireflective hardmask composition includes an organic solvent, and at least one polymer represented by Formulae A, B or C: In Formulae A and B, the fluorene group is unsubstituted or substituted, in Formula C, the naphthalene group is unsubstituted or substituted, n is at least 1 and is less than about 750, m is at least 1, and m+n is less than about 750, G is an aromatic ring-containing group having an alkoxy group, and R1 is methylene or includes a non-fluorene-containing aryl linking group.

Abstract: An aromatic ring-containing polymer, a polymer mixture, an antireflective hardmask composition, and a method for patterning a material on a substrate, the aromatic ring-containing polymer including at least one aromatic ring-containing polymer represented by Formulae 1, 2, or 3.