Patents by Inventor Jin-kwon Bok

Jin-kwon Bok has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10678117
    Abstract: An optical phased array (OPA) may be included in a light detection and ranging (LiDAR) system and may be configured to perform beam steering. The OPA may include a cascading structure of splitters configured to enable a branch operation to be performed M times. Each splitter may split an input optical signal in a ratio of 1:1 and output the split input optical signal. The OPA may include a plurality of sets of first phase shifters (PSs), each set of first PSs located exclusively on one output end of a separate splitter, each set of first PSs including a particular quantity of first PSs based on a branch position at which the separate splitter is located. The OPA may be included in a LiDAR system that is further included in a vehicle that is configured to enable navigation of the vehicle, including autonomous navigation, through an environment.
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: June 9, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-jae Shin, Hyun-il Byun, Kyoung-ho Ha, Seong-gu Kim, Jin-kwon Bok, Jung-ho Cha, Dong-hyun Kim, Yong-sang Park, Min-kyung Kim
  • Patent number: 10230473
    Abstract: An optical transmitter includes photonic integrated circuits configured to respectively output optical transmission signals in different wavelength ranges. A photonic integrated circuit may include emitters configured to emit beams having different wavelengths; drivers configured to respectively provide power to the emitters, and a wavelength division multiplexer configured to transmit the beams emitted by the emitters. A photonic integrated circuit may include a switch device that controls the drivers, and light detectors configured to detect intensities of the beams emitted from the emitters. The switch device may selectively operate at least one driver of the plurality of drivers based on information associated with intensities of the beams. The switch device may selectively operate a driver connected to an emitter, based on a determination that an intensity of a beam emitted by another emitter is less than a threshold intensity value.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: March 12, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-jae Shin, Kyoung-ho Ha, Seong-gu Kim, Jin-kwon Bok, Jung-ho Cha, Dong-hyun Kim
  • Publication number: 20180052378
    Abstract: An optical phased array (OPA) may be included in a light detection and ranging (LiDAR) system and may be configured to perform beam steering. The OPA may include a cascading structure of splitters configured to enable a branch operation to be performed M times. Each splitter may split an input optical signal in a ratio of 1:1 and output the split input optical signal. The OPA may include a plurality of sets of first phase shifters (PSs), each set of first PSs located exclusively on one output end of a separate splitter, each set of first PSs including a particular quantity of first PSs based on a branch position at which the separate splitter is located. The OPA may be included in a LiDAR system that is further included in a vehicle that is configured to enable navigation of the vehicle, including autonomous navigation, through an environment.
    Type: Application
    Filed: March 17, 2017
    Publication date: February 22, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dong-jae SHIN, Hyun-il Byun, Kyoung-ho Ha, Seong-gu Kim, Jin-kwon Bok, Jung-ho Cha, Dong-hyun Kim, Yong-sang Park, Min-kyung Kim
  • Patent number: 9897753
    Abstract: An optical device includes a substrate; a trench in a portion of the substrate; a clad layer arranged in the trench; a first structure arranged on the clad layer to have a first depth; and a second structure arranged on the clad layer to have a second depth different from the first depth.
    Type: Grant
    Filed: December 22, 2016
    Date of Patent: February 20, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-Kwon Bok, Kyoung-Ho Ha, Dong-Jae Shin, Seong-Gu Kim, Kwan-Sik Cho, Beom-Suk Lee, Jung-Ho Cha, Hyun-Il Byun, Dong-Hyun Kim, Yong-Hwack Shin, Jung-Hye Kim
  • Publication number: 20170366272
    Abstract: An optical transmitter includes photonic integrated circuits configured to respectively output optical transmission signals in different wavelength ranges. A photonic integrated circuit may include emitters configured to emit beams having different wavelengths; drivers configured to respectively provide power to the emitters, and a wavelength division multiplexer configured to transmit the beams emitted by the emitters. A photonic integrated circuit may include a switch device that controls the drivers, and light detectors configured to detect intensities of the beams emitted from the emitters. The switch device may selectively operate at least one driver of the plurality of drivers based on information associated with intensities of the beams. The switch device may selectively operate a driver connected to an emitter, based on a determination that an intensity of a beam emitted by another emitter is less than a threshold intensity value.
    Type: Application
    Filed: February 8, 2017
    Publication date: December 21, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dong-jae SHIN, Kyoung-ho HA, Seong-gu KIM, Jin-kwon BOK, Jung-ho CHA, Dong-hyun KIM
  • Publication number: 20170184786
    Abstract: An optical device includes a substrate; a trench in a portion of the substrate; a clad layer arranged in the trench; a first structure arranged on the clad layer to have a first depth; and a second structure arranged on the clad layer to have a second depth different from the first depth.
    Type: Application
    Filed: December 22, 2016
    Publication date: June 29, 2017
    Inventors: JIN-KWON BOK, KYOUNG-HO HA, DONG-JAE SHIN, SEONG-GU KIM, KWAN-SIK CHO, BEOM-SUK LEE, JUNG-HO CHA, HYUN-IL BYUN, DONG-HYUN KIM, YONG-HWACK SHIN, JUNG-HYE KIM
  • Publication number: 20160178847
    Abstract: An optical coupler includes a tapered portion and a grating portion. The tapered portion has a width in a second direction increasing along a first direction substantially perpendicular to the second direction. The tapered portion includes first and second ends opposed to each other in the first direction. The first end has a first width, and the second end has a second width greater than the first width. The grating portion is connected to the second end of the tapered portion, and has a curvature radius greater than a distance to the first end of the tapered portion.
    Type: Application
    Filed: December 8, 2015
    Publication date: June 23, 2016
    Inventors: Seong-Gu Kim, Dong-Hyun KIM, Jin-Kwon BOK, Dong-Jae SHIN, In-Sung JOE, Kyoung-Ho HA
  • Patent number: 8842942
    Abstract: An optical modulator comprises a bulk-silicon substrate comprising a trench having a predetermined width and a predetermined depth. A bottom cladding layer is formed in the trench, and a plurality of waveguides and a phase modulation unit are formed on the bottom cladding layer. A top cladding layer is formed on the plurality of waveguides and the phase modulation unit.
    Type: Grant
    Filed: January 24, 2011
    Date of Patent: September 23, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-jae Shin, Kyoung-won Na, Sung-dong Suh, Kyoung-ho Ha, Seong-gu Kim, Ho-chul Ji, In-sung Joe, Jin-kwon Bok, Pil-kyu Kang
  • Patent number: 8791405
    Abstract: Optical waveguide and coupler devices and methods include a trench formed in a bulk semiconductor substrate, for example, a bulk silicon substrate. A bottom cladding layer is formed in the trench, and a core region is formed on the bottom cladding layer. A reflective element, such as a distributed Bragg reflector can be formed under the coupler device and/or the waveguide device. Because the optical devices are integrated in a bulk substrate, they can be readily integrated with other devices on a chip or die in accordance with silicon photonics technology. Specifically, for example, the optical devices can be integrated in a DRAM memory circuit chip die.
    Type: Grant
    Filed: October 25, 2010
    Date of Patent: July 29, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ho-chul Ji, Ki-nam Kim, Yong-woo Hyung, Kyoung-won Na, Kyoung-ho Ha, Yoon-dong Park, Dae-lok Bae, Jin-kwon Bok, Pil-kyu Kang, Sung-dong Suh, Seong-gu Kim, Dong-jae Shin, In-sung Joe
  • Publication number: 20140144380
    Abstract: A gas supply pipe and a chemical vapor deposition (CVD) apparatus including the gas supply pipe. The gas supply pipe includes: a first pipe connected to a gas storage apparatus via a gas supply line to supply a reacting gas into a reacting furnace; and a second pipe thermally contacting the first pipe to cool the first pipe, wherein a first end of the second pipe is connected to a cooling medium supplying unit via a cooling medium line such that a cooling medium circulates inside the second pipe, and a second, opposite end of the second pipe is connected to a cooling medium collecting unit.
    Type: Application
    Filed: November 28, 2012
    Publication date: May 29, 2014
    Inventors: Sung-ho Kang, Bong-jin Kuh, Ki-chul Kim, Jin-kwon Bok, Yong-kyu Joo, Sang-cheol Ha
  • Publication number: 20140139900
    Abstract: A wavelength tunable optical transmitter includes a first waveguide receiving incident light through an input port and outputting the incident light to a first output port, a resonant modulator adjacent to the first waveguide and whose resonant wavelength is variable, and a second waveguide disposed optically in parallel to the first waveguide and outputting emitted light to a second output port. The resonant modulator includes a silicon resonator constituted by a crystallized silicon film in the form of a closed loop between the first and second waveguides, a first electrode within the silicon resonator and constituted by a silicon film of a first conductivity type, and a second electrode extending alongside part of the outer circumferential surface of the silicon resonator and constituted by a silicon film of a second conductivity type.
    Type: Application
    Filed: August 21, 2013
    Publication date: May 22, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong-Jae SHIN, Jin-Kwon BOK, Beom-Suk LEE, Kwan-Sik CHO, Ho-Chul JI, Sang-Hun CHOI, Kyoung-Ho HA
  • Publication number: 20110243492
    Abstract: A silicon based optical modulator apparatus can include a lateral slab on an optical waveguide, the lateral slab protruding beyond side walls of the optical waveguide so that a portion of the optical waveguide protrudes from the lateral slab towards a substrate.
    Type: Application
    Filed: March 16, 2011
    Publication date: October 6, 2011
    Inventors: Kyoung-won NA, Sung-dong Suh, Kyoung-ho Ha, Seong-gu Kim, Jin-kwon Bok, Dong-jae Shin, Ho-chul Ji, Pil-kyu Kang, In-sung Joe
  • Publication number: 20110194803
    Abstract: An optical modulator comprises a bulk-silicon substrate comprising a trench having a predetermined width and a predetermined depth. A bottom cladding layer is formed in the trench, and a plurality of waveguides and a phase modulation unit are formed on the bottom cladding layer. A top cladding layer is formed on the plurality of waveguides and the phase modulation unit.
    Type: Application
    Filed: January 24, 2011
    Publication date: August 11, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong-jae SHIN, Kyoung-won NA, Sung-dong SUH, Kyoung-ho HA, Seong-gu KIM, Ho-chul JI, In-sung JOE, Jin-kwon BOK, Pil-kyu KANG
  • Publication number: 20110133063
    Abstract: Optical waveguide and coupler devices and methods include a trench formed in a bulk semiconductor substrate, for example, a bulk silicon substrate. A bottom cladding layer is formed in the trench, and a core region is formed on the bottom cladding layer. A reflective element, such as a distributed Bragg reflector can be formed under the coupler device and/or the waveguide device. Because the optical devices are integrated in a bulk substrate, they can be readily integrated with other devices on a chip or die in accordance with silicon photonics technology. Specifically, for example, the optical devices can be integrated in a DRAM memory circuit chip die.
    Type: Application
    Filed: October 25, 2010
    Publication date: June 9, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ho-chul Ji, Ki-nam Kim, Yong-woo Hyung, Kyoung-won Na, Kyoung-ho Ha, Yoon-dong Park, Dae-lok Bae, Jin-kwon Bok, Pil-kyu Kang, Sung-dong Suh, Seong-gu Kim, Dong-jae Shin, In-sung Joe