Abstract: The present invention relates to a communication device that automatically searches for wireless local area network (WLAN) access points, and to a method thereof. The communication device includes a GPS receiving module (12) for receiving position information of the connection device from a GPS satellite; a WLAN module (11) for connecting with the WLAN access point; a storage unit (13) for storing position information of the WLAN access point; and a controller (14) for selectively operating the WLAN module based on the position information of the communication device output from the GPS receiving module (12) and the position information of the WLAN access point stored in the storage unit (13). According to the present invention, a user terminal receiving data services through WLAN efficiently utilizes power. Also, the searching of the WLAN access points is performed automatically without the need for user manipulation.

Abstract: Disclosed is a method for automatically searching a wireless LAN AP (access point) in a terminal having a wireless LAN module, a mobile communication module, and a GPS receiving module installed therein. The method comprises: (a) acquiring location information of the wireless LAN AP provided in a service area of a base station from the base station connected through the mobile communication module; (b) consecutively tracking a current location of the terminal through the GPS receiving module; (c) determining a driving start time of the wireless LAN module through the location information of the wireless LAN AP acquired in (a) and the current location information of the terminal tracked in (b); and (d) driving the wireless LAN module to detect a beacon signal periodically output by the wireless LAN AP.

Abstract: Disclosed is an apparatus and method for searching an access point (AP) of a wireless LAN based on broadcasting information of a base station in a mobile communication network. In case that a dual mode mobile station having a wireless LAN module and a mobile communication module wants to use a data service through the AP of the wireless. LAN, the apparatus and method for automatically searching an access point (AP) of a wireless LAN drives the wireless LAN module only when there is the AP of the wireless LAN, thereby reducing power consumption.

Abstract: A high voltage semiconductor device including a semiconductor substrate on which a semi-insulating polycrystalline silicon layer is formed to alleviate electric field concentration in a field region, is disclosed. A thermal oxide layer is formed on the semi-insulating polycrystalline silicon layer to serve as a protective layer. The thermal oxide layer forms a good interface with the semi-insulating polycrystalline silicon layer compared to a wet etched oxide layer or a chemical vapor deposition (CVD) oxide layer, thereby decreasing the amount of leakage current. In addition, compared to a dual semi-insulating polycrystalline silicon layer, the thermal oxide layer exhibits a high surface protection effect and a high resistance against dielectric breakdown. It also allows a great reduction in fabrication time.

Abstract: A video decoding system is disclosed with a increased efficiency by allowing a parallel processing when high speed is required and/or a serial processing when high speed is not required, and by effectively managing memory requests from different system blocks. The video decoding system according to the present invention includes a variable length decoder, an inverse quantizer, an inverse scanner, an inverse discrete cosine transform unit, a motion compensation unit, a half pel prediction unit, and a memory controller, allowing control of the processing time depending upon a video bit stream compression method.

Abstract: A high voltage semiconductor device including a semiconductor substrate on which a semi-insulating polycrystalline silicon layer is formed to alleviate electric field concentration in a field region, is disclosed. A thermal oxide layer is formed on the semi-insulating polycrystalline silicon layer to serve as a protective layer. The thermal oxide layer forms a good interface with the semi-insulating polycrystalline silicon layer compared to a wet etched oxide layer or a chemical vapor deposition (CVD) oxide layer, thereby decreasing the amount of leakage current. In addition, compared to a dual semi-insulating polycrystalline silicon layer, the thermal oxide layer exhibits a high surface protection effect and a high resistance against dielectric breakdown. It also allows a great reduction in fabrication time.

Abstract: A power semiconductor device having an improved high breakdown voltage and improved productivity, and a fabrication method thereof are provided. The power semiconductor includes a collector region of a first conductivity type formed in a semiconductor substrate, a base region of second conductivity type formed in the collector region, and an emitter region of the first conductivity type formed in the base region. A channel stop region is formed being spaced a predetermined distance from the base region. An insulative film, a semi-insulating polycrystalline silicon (SIPOS) film, and a nitride film patterned respectively to expose the emitter region, the base region, and the channel stop region are sequentially deposited on the semiconductor substrate. A base electrode, an emitter electrode, and an equipotential electrode connected respectively to the base region, the emitter region, and the channel stop region are formed.

Abstract: A digital audio/video system and method is disclosed. The digital audio/video system of the present invention integrates the operations of several digital devices into one simplified system by eliminating duplicative elements required in each digital device. The combination of operations allowed by the digital audio/video system and device generally includes simultaneously viewing two TV programs, viewing one TV program while recording the other TV program, simultaneously viewing two TV programs while recording one program, viewing one TV program and another program received from a storage device such as a video tape or a DVD disc, or viewing two programs received from a storage device.

Abstract: A power semiconductor device having an improved high breakdown voltage and improved productivity, and a fabrication method thereof are provided. The power semiconductor includes a collector region of a first conductivity type formed in a semiconductor substrate, a base region of second conductivity type formed in the collector region, and an emitter region of the first conductivity type formed in the base region. A channel stop region is formed being spaced a predetermined distance from the base region. An insulative film, a semi-insulating polycrystalline silicon (SIPOS) film, and a nitride film patterned respectively to expose the emitter region, the base region, and the channel stop region are sequentially deposited on the semiconductor substrate. A base electrode, an emitter electrode, and an equipotential electrode connected respectively to the base region, the emitter region, and the channel stop region are formed.

Abstract: A system and method of controlling a memory of an HDTV video decoder is disclosed which has a video bit stream write buffer, a bit stream read buffer, a motion compensate buffer, a store buffer and a display buffer and outputs request signals to read/write a data from/into an external memory every time it is needed in order to decode an input video bit stream. The method includes the steps of prioritizing the request signals output and sending an authorization signal in response to each of the request signals.

Abstract: A video decoder for high definition television includes a variable length decoder decoding codes corresponding to discrete cosine transform (DCT) coefficients of an applied video bit stream, and produces a run-level pair for each code. An index decoder stores run-level pairs produced from the variable length decoder, and produces the position information indicating the number of a level value of a corresponding run-level pair among 64 DCT coefficients. An inverse quantizer obtains an added value corresponding to the position information of the index decoder from a quantization matrix, and performs an inverse quantization by multiplying a quantizer level for determining a quantization step and DCT coefficient to the added value. An inverse scanner includes a plurality of memories, and inversely scanning the DCT coefficient inversely quantized and applied serially from the inverse quantizer and produces the DCT coefficient in parallel at the same time.

Abstract: The motion vector decoder includes a parameter delay block which delays transmissions of various input signals necessary for motion vector decoding; a motion vector residual block which extracts a motion residual value and outputs a positive number of the motion residual value; a motion vector code table block which searches for a motion code, a condition of a sign of the motion code, and a zero condition of the motion code using a variable length decoding table and outputting the searched values; a motion vector delta block which calculates a difference of motion vectors from the motion vector residual block and the motion vector code table block; a MV adder which adds the difference value received from the motion vector delta block and a motion vector of a preceding macroblock to output a new motion vector; and a register which updates a flip-flop corresponding to a current (r, s, t) of a new motion vector.