Patents by Inventor Jinkyu ROH

Jinkyu ROH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ETCHANT COMPOSITION FOR ETCHING SILICON AND SILICON GERMANIUM, AND PREPARATION METHOD OF PATTERN USING THE SAME
    Publication number: 20240263072
    Abstract: The present disclosure relates to an etchant composition for etching silicon and silicon germanium, and/or a preparation method of a pattern using the etchant composition. The etchant composition may include an oxidizing agent, a fluorine-based compound, a surfactant represented by Chemical Formula 1 or 2, and water. The etchant composition may include the surfactant in an amount of 5% to 40% by weight based on 100% by weight of the etchant composition.
    Type: Application
    Filed: July 18, 2023
    Publication date: August 8, 2024
    Applicants: Samsung Electronics Co., Ltd., DONGWOO FINE-CHEM CO., LTD.
    Inventors: Heesuk WOO, Kyusang AHN, Jung-Min OH, Jiwon KIM, Jinkyu ROH, Hyojoong YOON, Sang Won BAE, Kyungmo SUNG
  • Silicon layer etchant composition and method of forming pattern by using the same
    Patent number: 11168253
    Abstract: A silicon layer etchant composition and associated methods, the composition including about 1 wt % to about 20 wt % of an alkylammonium hydroxide; about 1 wt % to about 30 wt % of an amine compound; about 0.01 wt % to about 0.2 wt % of a nonionic surfactant including both a hydrophobic group and a hydrophilic group; and water, all wt % being based on a total weight of the silicon layer etchant composition.
    Type: Grant
    Filed: January 6, 2020
    Date of Patent: November 9, 2021
    Assignees: SAMSUNG ELECTRONICS CO., LTD., DONGWOO FINE-CHEM CO., LTD.
    Inventors: Changsu Jeon, Jungmin Oh, Hyosan Lee, Hoon Han, Jinkyu Roh, Hyojoong Yoon, Dongwun Shin
  • SILICON LAYER ETCHANT COMPOSITION AND METHOD OF FORMING PATTERN BY USING THE SAME
    Publication number: 20200216757
    Abstract: A silicon layer etchant composition and associated methods, the composition including about 1 wt % to about 20 wt % of an alkylammonium hydroxide; about 1 wt % to about 30 wt % of an amine compound; about 0.01 wt % to about 0.2 wt % of a nonionic surfactant including both a hydrophobic group and a hydrophilic group; and water, all wt % being based on a total weight of the silicon layer etchant composition.
    Type: Application
    Filed: January 6, 2020
    Publication date: July 9, 2020
    Applicant: Dongwoo Fine-Chem Co., Ltd.
    Inventors: Changsu JEON, Jungmin OH, Hyosan LEE, Hoon HAN, Jinkyu ROH, Hyojoong YOON, Dongwun SHIN