Abstract: A pattern identification system is disclosed. The pattern identification system includes a memory configured to store instructions and a processor coupled to the memory and configured to execute the instructions to perform a process. The process includes receiving measurement data associated with the wafer pattern. The process may also include determining a similarity value between the wafer pattern and a reference pattern associated with a reference wafer based on the measurement data. The process may further include determining whether the similarity value satisfies a similarity condition. Responsive to the similarity value satisfying the similarity condition, the process may additionally include identifying a failure mode associated with the wafer pattern based on the reference pattern of the reference wafer.

Abstract: A display device includes a bank including an opening defining a plurality of pixels; a plurality of light emitting elements disposed in the plurality of pixels; a color conversion layer disposed on the plurality of light emitting elements in the opening; and a low refractive layer disposed on the color conversion layer in the opening.

Abstract: A light emitting display device comprises a substrate, a first pixel electrode disposed on the substrate, a pixel defining film disposed on the first pixel electrode and having a first opening at least partially exposing the first pixel electrode, a first organic light emitting layer disposed on the pixel defining film and overlapping with the first opening of the pixel defining film, and a black matrix disposed on the first organic light emitting layer and having a first opening overlapping with the first organic light emitting layer. Light having passed through the first opening of the black matrix is one of red light, green light, and blue light. The first opening of the black matrix may have a shape with a curved portion.

Abstract: A light emitting display device comprises a substrate, a first pixel electrode disposed on the substrate, a pixel defining film disposed on the first pixel electrode and having a first opening at least partially exposing the first pixel electrode, a first organic light emitting layer disposed on the pixel defining film and overlapping with the first opening of the pixel defining film, and a black matrix disposed on the first organic light emitting layer and having a first opening overlapping with the first organic light emitting layer. Light having passed through the first opening of the black matrix is one of red light, green light, and blue light. The first opening of the black matrix may have a shape with a curved portion.

Abstract: A display device includes a bank including an opening defining a plurality of pixels; a plurality of light emitting elements disposed in the plurality of pixels; a color conversion layer disposed on the plurality of light emitting elements in the opening; and a low refractive layer disposed on the color conversion layer in the opening.

Abstract: A display device includes a display substrate, a light emitting element layer disposed on a surface of the display substrate and including display pixels, a sensing substrate having a surface attached to another surface of the display substrate, a sensing element layer disposed on another surface of the sensing substrate and including sending pixels that each sense light of a color, and a photorefractive layer disposed on the sensing element layer and including micro lenses.

Abstract: A light emitting display device comprises a substrate, a first pixel electrode disposed on the substrate, a pixel defining film disposed on the first pixel electrode and having a first opening at least partially exposing the first pixel electrode, a first organic light emitting layer disposed on the pixel defining film and overlapping with the first opening of the pixel defining film, and a black matrix disposed on the first organic light emitting layer and having a first opening overlapping with the first organic light emitting layer. Light having passed through the first opening of the black matrix is one of red light, green light, and blue light. The first opening of the black matrix may have a shape with a curved portion.

Abstract: A memory device, a system, and a method for operating the memory device are provided. The memory device includes a first memory string and a peripheral circuit. The first memory string includes a first drain, a first drain select gate (DSG) transistor, a first drain dummy transistor between the first drain and the first DSG transistor, and a plurality of first memory cells. A first drain dummy line is coupled to the first drain dummy transistor, and a first DSG line is coupled to the first DSG transistor. The peripheral circuit is configured to, in a program operation, apply a first DSG voltage to the first DSG line and apply a first drain dummy line voltage to the first drain dummy line to turn on the first drain dummy transistor.

Abstract: In certain aspects, a memory device includes a first memory string including a first drain, a first drain select gate (DSG) transistor, first memory cells, and a first drain dummy transistor between the first drain and the first DSG transistor. The memory device also includes a first bit line coupled to the first drain, a first drain dummy line coupled to the first drain dummy transistor, a first DSG line coupled to the first DSG transistor, word lines respectively coupled to the first memory cells, and a peripheral circuit configured to perform a program operation on a target memory cell of the first memory cells coupled to a selected word line of the word lines.

Abstract: A light emitting display device comprises a substrate, a first pixel electrode disposed on the substrate, a pixel defining film disposed on the first pixel electrode and having a first opening at least partially exposing the first pixel electrode, a first organic light emitting layer disposed on the pixel defining film and overlapping with the first opening of the pixel defining film, and a black matrix disposed on the first organic light emitting layer and having a first opening overlapping with the first organic light emitting layer. Light having passed through the first opening of the black matrix is one of red light, green light, and blue light. The first opening of the black matrix may have a shape with a curved portion.

Abstract: A display device according to an embodiment includes a light emitting unit including a first light emitting diode to emit first blue light, a second light emitting diode to emit second blue light, the second blue light being different from the first blue light in central wavelength, and a quantum dot color conversion unit including a quantum dot color conversion layer on and overlapping the second light emitting diode.

Abstract: A display device includes a bank including an opening defining a plurality of pixels; a plurality of light emitting elements disposed in the plurality of pixels; a color conversion layer disposed on the plurality of light emitting elements in the opening; and a low refractive layer disposed on the color conversion layer in the opening.

Abstract: Provided are a wavelength conversion layer and a display device. A color conversion element comprises: a wavelength conversion layer; one or more low refractive layers which are disposed on and/or under the wavelength conversion layer and have a lower refractive index than the wavelength conversion layer; and one or more capping layers which are disposed between the wavelength conversion layer and the low refractive layers and/or on a surface opposite to a surface of each of the low refractive layers which faces the wavelength conversion layer.

Abstract: A three-dimensional (3D) memory device is provided and includes a substrate, an alternating stack and a channel structure. The alternating stack is disposed on the substrate, and the alternating stack includes a plurality of conductive layers and a plurality of air gap layers alternately stacked. The channel structure is disposed on the substrate and extends vertically through the conductive layers and the air gap layers. The alternating stack further includes a plurality of etching stop blocks between the air gap layers and the channel structure.

Abstract: An operation method for a 3D NAND flash having a plurality of bit lines, wherein the plurality of bit lines comprises a plurality of layers, the operation method includes defining a plurality of upper layers of the plurality of bit lines of the 3D NAND flash as a plurality of upper select gates and a top layer of the plurality of bit lines of the 3D NAND flash as a top dummy layer; and applying a first voltage on a first top dummy layer of a select bit line of the plurality of bit lines to turn on the first top dummy layer of the select bit line of the plurality of bit lines when programming.

Abstract: Provided are a wavelength conversion layer and a display device. A color conversion element comprises: a wavelength conversion layer; one or more low refractive layers which are disposed on and/or under the wavelength conversion layer and have a lower refractive index than the wavelength conversion layer; and one or more capping layers which are disposed between the wavelength conversion layer and the low refractive layers and/or on a surface opposite to a surface of each of the low refractive layers which faces the wavelength conversion layer.

Abstract: A three-dimensional (3D) memory device is provided and includes a substrate, an alternating stack and a channel structure. The alternating stack is disposed on the substrate, and the alternating stack includes a plurality of conductive layers and a plurality of air gap layers alternately stacked. The channel structure is disposed on the substrate and extends vertically through the conductive layers and the air gap layers. The alternating stack further includes a plurality of etching stop blocks between the air gap layers and the channel structure.

Abstract: A liquid crystal display device and a method of manufacturing a liquid crystal display device are provided. The liquid crystal display device includes: a base; an alignment inducing layer on the base and including a first compound represented by formula A1 or a polymer of the first compound; and a liquid crystal layer on the alignment inducing layer that includes liquid crystals: where R1 may be hydrogen or a polymerizable group, R2 may be a hydrophilic group, SP1 and SP2 may each independently be a single bond, a C1-C12 alkylene group, or a C1-C12 alkoxylene group, Z may be a single bond, an ester group, or an ether group, and X1, X2 and X3 may each independently be hydrogen, a methyl group, fluorine, or chlorine.

Abstract: In certain aspects, a memory device includes a first memory string including a first drain, a first drain select gate (DSG) transistor, first memory cells, and a first drain dummy transistor between the first drain and the first DSG transistor. The memory device also includes a first bit line coupled to the first drain, a first drain dummy line coupled to the first drain dummy transistor, a first DSG line coupled to the first DSG transistor, word lines respectively coupled to the first memory cells, and a peripheral circuit configured to perform a program operation on a target memory cell of the first memory cells coupled to a selected word line of the word lines.

Abstract: An operation method for a 3D NAND flash having a plurality of bit lines, wherein the plurality of bit lines comprises a plurality of layers, the operation method includes defining a plurality of upper layers of the plurality of bit lines of the 3D NAND flash as a plurality of upper select gates and a top layer of the plurality of bit lines of the 3D NAND flash as a top dummy layer; and applying a first voltage on a first top dummy layer of a select bit line of the plurality of bit lines to turn on the first top dummy layer of the select bit line of the plurality of bit lines when programming.