Abstract: A method of fabricating a semiconductor device includes providing a substrate having first areas and second areas, forming first metal wires on the first areas of the substrate, forming second metal wires on the second areas of the substrate, forming an interlayer insulation layer to cover the first and second metal wires, forming pad patterns on the first metal wires, forming a passivation layer to cover the pad patterns on the interlayer insulation layer, and forming a wrapping layer on the passivation layer. The wrapping layer includes first openings that are vertically aligned with the pad patterns, and second openings that are disposed on the second areas and that horizontally connect the first openings with each other.

Abstract: A semiconductor device comprises a substrate, a plurality of bonding pads formed on the substrate, a reference pad comprising a plurality of sensing lines located in a reference pad area of the substrate, and a plurality of detection wirings electrically connected to the respective sensing lines. The bonding pads are configured to make contact with a plurality of probe pins of a test apparatus to receive electrical test signals for an electrical test of the semiconductor device. The reference pad is configured to make contact with a reference pin of the test apparatus, and the reference pad area has substantially the same shape and size as the bonding pads such that positions in the reference pad area correspond one-to-one with positions in each of the bonding pads.

Abstract: A semiconductor device includes a lower structure, an insulation layer, metal contacts, a bridge and a metal pad. The lower structure has a metal wiring. An insulation layer is formed on the lower structure. The metal contacts penetrate the insulation layer to be connected to the metal wiring. The bridge is provided in the insulation layer, the bridge connecting the metal contacts to one another. The metal pad is provided on the insulation layer, the metal pad making contact with the metal contacts.

Abstract: A wiring structure may include a first wiring having a first width that extends in a first direction, and a second wiring intersecting the first wiring, the second wiring extending in a second direction and having a second width that is equal to or less than the first width. Furthermore, the first wiring may have a third width that is smaller than the first width and the second wiring may have a fourth width that is smaller than the second width. Portions of the first and second wirings having the third and fourth widths may extend from an intersecting region in which the first wiring and the second wiring intersect each other.

Abstract: A semiconductor device comprises a substrate, a plurality of bonding pads formed on the substrate, a reference pad comprising a plurality of sensing lines located in a reference pad area of the substrate, and a plurality of detection wirings electrically connected to the respective sensing lines. The bonding pads are configured to make contact with a plurality of probe pins of a test apparatus to receive electrical test signals for an electrical test of the semiconductor device. The reference pad is configured to make contact with a reference pin of the test apparatus, and the reference pad area has substantially the same shape and size as the bonding pads such that positions in the reference pad area correspond one-to-one with positions in each of the bonding pads.

Abstract: A semiconductor device includes a lower structure, an insulation layer, metal contacts, a bridge and a metal pad. The lower structure has a metal wiring. An insulation layer is formed on the lower structure. The metal contacts penetrate the insulation layer to be connected to the metal wiring. The bridge is provided in the insulation layer, the bridge connecting the metal contacts to one another. The metal pad is provided on the insulation layer, the metal pad making contact with the metal contacts.