Abstract: A method for determining phase locking of critical arc light includes: step 1: monitoring and collecting light radiation intensity of an arc inside a switch cabinet in real time, and converting the collected light radiation intensity into an electrical signal; step 2: extracting a power-frequency fundamental wave of the electrical signal, comparing an amplitude of the power-frequency fundamental wave of the electrical signal with a first threshold, and generating a pre-warning signal based on a comparison result of the first threshold; step 3: comparing the amplitude of the power-frequency fundamental wave of the electrical signal with a second threshold voltage, and generating a control signal based on a comparison result of the second threshold voltage and a protection time threshold; and step 4: protecting the switch cabinet under the critical arc light environment based on the pre-warning signal and the control signal.

Abstract: The present disclosure provides a method and device for intelligent control of heating furnace combustion based on a big data cloud platform, which relates to the technical field of artificial intelligence control. The method includes: construction of big data cloud platform based on production and operation parameters of the heating furnace; identification of key factors in the production process of the heating furnace by using big data mining technology; independent deployment of traditional heating furnace combustion control systems based on the mechanism model; and integration of cloud platform big data expert knowledge base and the heating furnace combustion intelligent control system.

Abstract: A partial discharge (PD) detection apparatus for gas-insulated equipment includes a photon collector, an optical splitter, a first photoelectric conversion module, an ultraviolet fluorescent crystal, a second photoelectric conversion module, and a signal processing module, where the ultraviolet fluorescent crystal is configured to convert a second optical radiation signal into an optical radiation signal of an ultraviolet fluorescence band, and the signal processing module is configured to calculate first apparent intensity based on a first voltage signal output by the first photoelectric conversion module, calculate second apparent intensity based on a second voltage signal output by the second photoelectric conversion module, and determine discharge intensity of the optical radiation based on a ratio of the second apparent intensity to the first apparent intensity. Technical solutions of the present disclosure are not affected by an unknown distance between a discharge position and a detection point.

Abstract: A method for determining phase locking of critical arc light includes: step 1: monitoring and collecting light radiation intensity of an arc inside a switch cabinet in real time, and converting the collected light radiation intensity into an electrical signal; step 2: extracting a power-frequency fundamental wave of the electrical signal, comparing an amplitude of the power-frequency fundamental wave of the electrical signal with a first threshold, and generating a pre-warning signal based on a comparison result of the first threshold; step 3: comparing the amplitude of the power-frequency fundamental wave of the electrical signal with a second threshold voltage, and generating a control signal based on a comparison result of the second threshold voltage and a protection time threshold; and step 4: protecting the switch cabinet under the critical arc light environment based on the pre-warning signal and the control signal.

Abstract: A partial discharge (PD) detection apparatus for gas-insulated equipment includes a photon collector, an optical splitter, a first photoelectric conversion module, an ultraviolet fluorescent crystal, a second photoelectric conversion module, and a signal processing module, where the ultraviolet fluorescent crystal is configured to convert a second optical radiation signal into an optical radiation signal of an ultraviolet fluorescence band, and the signal processing module is configured to calculate first apparent intensity based on a first voltage signal output by the first photoelectric conversion module, calculate second apparent intensity based on a second voltage signal output by the second photoelectric conversion module, and determine discharge intensity of the optical radiation based on a ratio of the second apparent intensity to the first apparent intensity. Technical solutions of the present disclosure are not affected by an unknown distance between a discharge position and a detection point.

Abstract: A metal-to-metal antifuse having a lower metal electrode, a lower thin adhesion promoting layer disposed over the lower metal electrode, an amorphous carbon antifuse material layer disposed over the thin adhesion promoting layer, an upper thin adhesion promoting layer disposed over said antifuse material layer, and an upper metal electrode. The thin adhesion promoting layers are about 2 angstroms to 20 angstroms in thickness, and are from a material selected from the group comprising SixCy and SixNy. The ratio of x to y in SixCy is in a range of about 1±0.4, and the ratio of x to y in SixNy is in a range of about 0.75±0.225.

Abstract: A metal-to-metal antifuse having a lower metal electrode, a lower thin adhesion promoting layer disposed over the lower metal electrode, an amorphous carbon antifuse material layer disposed over the thin adhesion promoting layer, an upper thin adhesion promoting layer disposed over said antifuse material layer, and an upper metal electrode. The thin adhesion promoting layers are about 2 angstroms to 20 angstroms in thickness, and are from a material selected from the group comprising SixCy and SixNy. The ratio of x to y in SixCy is in a range of about 1+/?0.4, and the ratio of x to y in SixNy is in a range of about 0.75+/?0.225.

Abstract: A method for forming a semiconductor device (10) includes forming an organic anti-reflective coating (OARC) layer (18) over the semiconductor device (10). A tetra-ethyl-ortho-silicate (TEOS) layer (20) is formed over the OARC layer (18). The TEOS layer (20) is exposed to oxygen-based plasma at a temperature of at most about 300 degrees Celsius. In an alternative embodiment, the TEOS layer (20) is first exposed to a nitrogen-based plasma before being exposed to the oxygen-based plasma. A photoresist layer (22) is formed over the TEOS layer (20) and patterned. By applying oxygen based plasma and nitrogen based plasma to the TEOS layer (20) before applying photoresist, pattern defects are reduced.

Abstract: A metal-to-metal antifuse having a lower metal electrode, a lower thin adhesion promoting layer disposed over the lower metal electrode, an amorphous carbon antifuse material layer disposed over the thin adhesion promoting layer, an upper thin adhesion promoting layer disposed over said antifuse material layer, and an upper metal electrode. The thin adhesion promoting layers are about 2 angstroms to 20 angstroms in thickness, and are from a material selected from the group comprising SixCy and SixNy. The ratio of x to y in SixCy is in a range of about 1+/?0.4, and the ratio of x to y in SixNy is in a range of about 0.75+/?0.225.