Patents by Inventor Jin Miao Shen

Jin Miao Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • AMORPHOUS CARBON METAL-TO-METAL ANTIFUSE WITH ADHESION PROMOTING LAYERS
    Publication number: 20080197450
    Abstract: A metal-to-metal antifuse having a lower metal electrode, a lower thin adhesion promoting layer disposed over the lower metal electrode, an amorphous carbon antifuse material layer disposed over the thin adhesion promoting layer, an upper thin adhesion promoting layer disposed over said antifuse material layer, and an upper metal electrode. The thin adhesion promoting layers are about 2 angstroms to 20 angstroms in thickness, and are from a material selected from the group comprising SixCy and SixNy. The ratio of x to y in SixCy is in a range of about 1±0.4, and the ratio of x to y in SixNy is in a range of about 0.75±0.225.
    Type: Application
    Filed: April 15, 2008
    Publication date: August 21, 2008
    Applicants: ACTEL CORPORATION, TEXAS TECH UNIVERSITY SYSTEM
    Inventors: Frank W. Hawley, A. Farid Issaq, John L. McCollum, Shubhra M. Gangopadhyay, Jorge A. Lubguban, Jin Miao Shen
  • Amorphous carbon metal-to-metal antifuse with adhesion promoting layers
    Patent number: 7358589
    Abstract: A metal-to-metal antifuse having a lower metal electrode, a lower thin adhesion promoting layer disposed over the lower metal electrode, an amorphous carbon antifuse material layer disposed over the thin adhesion promoting layer, an upper thin adhesion promoting layer disposed over said antifuse material layer, and an upper metal electrode. The thin adhesion promoting layers are about 2 angstroms to 20 angstroms in thickness, and are from a material selected from the group comprising SixCy and SixNy. The ratio of x to y in SixCy is in a range of about 1+/?0.4, and the ratio of x to y in SixNy is in a range of about 0.75+/?0.225.
    Type: Grant
    Filed: August 23, 2005
    Date of Patent: April 15, 2008
    Assignee: Actel Corporation
    Inventors: Frank W. Hawley, A. Farid Issaq, John L. McCollum, Shubhra M. Gangopadhyay, Jorge A. Lubguban, Jin Miao Shen
  • Plasma treatment for surface of semiconductor device
    Patent number: 7176130
    Abstract: A method for forming a semiconductor device (10) includes forming an organic anti-reflective coating (OARC) layer (18) over the semiconductor device (10). A tetra-ethyl-ortho-silicate (TEOS) layer (20) is formed over the OARC layer (18). The TEOS layer (20) is exposed to oxygen-based plasma at a temperature of at most about 300 degrees Celsius. In an alternative embodiment, the TEOS layer (20) is first exposed to a nitrogen-based plasma before being exposed to the oxygen-based plasma. A photoresist layer (22) is formed over the TEOS layer (20) and patterned. By applying oxygen based plasma and nitrogen based plasma to the TEOS layer (20) before applying photoresist, pattern defects are reduced.
    Type: Grant
    Filed: November 12, 2004
    Date of Patent: February 13, 2007
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Jin Miao Shen, Brian J. Fisher, Mark D. Hall, Kurt H. Junker, Vikas R. Sheth, Mehul D. Shroff
  • Amorphous carbon metal-to-metal antifuse with adhesion promoting layers
    Patent number: 6965156
    Abstract: A metal-to-metal antifuse having a lower metal electrode, a lower thin adhesion promoting layer disposed over the lower metal electrode, an amorphous carbon antifuse material layer disposed over the thin adhesion promoting layer, an upper thin adhesion promoting layer disposed over said antifuse material layer, and an upper metal electrode. The thin adhesion promoting layers are about 2 angstroms to 20 angstroms in thickness, and are from a material selected from the group comprising SixCy and SixNy. The ratio of x to y in SixCy is in a range of about 1+/?0.4, and the ratio of x to y in SixNy is in a range of about 0.75+/?0.225.
    Type: Grant
    Filed: December 27, 2002
    Date of Patent: November 15, 2005
    Assignees: Actel Corporation, Texas Tech University System
    Inventors: Frank W. Hawley, A. Farid Issaq, John L. McCollum, Shubhra M. Gangopadhyay, Jorge A. Lubguban, Jin Miao Shen