Abstract: A semiconductor device having a super junction and a method of manufacturing the semiconductor device capable of obtaining a high breakdown voltage are provided, whereby charge balance of the super junction is further accurately controlled in the semiconductor device that is implemented by an N-type pillar and a P-type pillar. The semiconductor device includes a semiconductor substrate; and a blocking layer including a first conductive type pillar and a second conductive type pillar that extend in a vertical direction on the semiconductor substrate and that are alternately arrayed in a horizontal direction, wherein, in the blocking layer, a density profile of a first conductive type dopant may be uniform in the horizontal direction, and the density profile of the first conductive type dopant may vary in the vertical direction.

Abstract: A semiconductor device having a super junction and a method of manufacturing the semiconductor device capable of obtaining a high breakdown voltage are provided, whereby charge balance of the super junction is further accurately controlled in the semiconductor device that is implemented by an N-type pillar and a P-type pillar. The semiconductor device includes a semiconductor substrate; and a blocking layer including a first conductive type pillar and a second conductive type pillar that extend in a vertical direction on the semiconductor substrate and that are alternately arrayed in a horizontal direction, wherein, in the blocking layer, a density profile of a first conductive type dopant may be uniform in the horizontal direction, and the density profile of the first conductive type dopant may vary in the vertical direction.

Abstract: The present invention relates to a security surveillance microwave sensor having a reduced false report rate by means of biological signal detection, which monitors and determines a malfunction state or a false alarm generated by environmental factors by detecting humans, animals or objects approaching within a predetermined distance using a microwave signal. The present invention may extend the monitoring distance of security surveillance, set an IF frequency band disturbed by a human body, amplify the IF frequency or use a change in the voltage level to extend the monitoring distance, manage a monitoring state by double-checking transmission and reception of security signals, and reduce the false report rate by distinguishing the false alarms or the malfunction state of the sensor.

Abstract: The present invention relates to a method of effectively removing various vibration noises using microwave Doppler radar, and an apparatus therefor. The method comprises the steps of: (a) generating and transmitting an oscillation frequency to a dynamic target, and receiving a signal reflected from the dynamic target and various signals generated around the dynamic target; (b) generating a Doppler IF signal from each of n received signals; (c) converting each Doppler IF signal into digital data; (d) configuring digital signals into a data set, and converting the data set into a frequency component symbol set; (e) calculating a value by adding index symbols and dividing by n reception antennas; and (f) classifying deviation between spectrum components of a commonly-generated periodic signal and an uncommon aperiodic signal, and obtaining only a periodic signal through filtering. The present invention can improve accuracy of sensing a biometric signal.

Abstract: A semiconductor device having a super junction and a method of manufacturing the semiconductor device capable of obtaining a high breakdown voltage are provided, whereby charge balance of the super junction is further accurately controlled in the semiconductor device that is implemented by an N-type pillar and a P-type pillar. The semiconductor device includes a semiconductor substrate; and a blocking layer including a first conductive type pillar and a second conductive type pillar that extend in a vertical direction on the semiconductor substrate and that are alternately arrayed in a horizontal direction, wherein, in the blocking layer, a density profile of a first conductive type dopant may be uniform in the horizontal direction, and the density profile of the first conductive type dopant may vary in the vertical direction.

Abstract: A semiconductor device having a super junction and a method of manufacturing the semiconductor device capable of obtaining a high breakdown voltage are provided, whereby charge balance of the super junction is further accurately controlled in the semiconductor device that is implemented by an N-type pillar and a P-type pillar. The semiconductor device includes a semiconductor substrate; and a blocking layer including a first conductive type pillar and a second conductive type pillar that extend in a vertical direction on the semiconductor substrate and that are alternately arrayed in a horizontal direction, wherein, in the blocking layer, a density profile of a first conductive type dopant may be uniform in the horizontal direction, and the density profile of the first conductive type dopant may vary in the vertical direction.

Abstract: A semiconductor device having a super junction and a method of manufacturing the semiconductor device capable of obtaining a high breakdown voltage are provided, whereby charge balance of the super junction is further accurately controlled in the semiconductor device that is implemented by an N-type pillar and a P-type pillar. The semiconductor device includes a semiconductor substrate; and a blocking layer including a first conductive type pillar and a second conductive type pillar that extend in a vertical direction on the semiconductor substrate and that are alternately arrayed in a horizontal direction, wherein, in the blocking layer, a density profile of a first conductive type dopant may be uniform in the horizontal direction, and the density profile of the first conductive type dopant may vary in the vertical direction.

Abstract: A method of manufacturing a silicon carbide (SiC) sintered body and a SiC sintered body obtained by the method are provided. The method includes: preparing a composite powder by subjecting a SiC raw material and a sintering aid raw material to mechanical alloying; and sintering the composite powder, wherein the sintering aid is at least one selected from the group consisting of an Al—C-based material, an Al—B—C-based material, and a B—C-based material. Accordingly, a SiC sintered body that can be sintered at low temperature, can be densified, and has high strength and high electrical conductivity can be prepared.

Abstract: A power device having fast switching characteristic, while keeping EMI noise to a minimum and a method of fabricating the same are provided. The power device includes a first field stop layer having a first conductivity type, a first drift region formed on the first field stop layer and having a first conductivity type in an impurity concentration that is lower than the first field stop layer, a buried region formed on the first drift region and having the first conductivity type in an impurity concentration that is higher than the first drift region, a second drift region formed on the buried region, a power device cell formed at an upper portion of the second drift region, and a collector region formed below the first field stop layer.

Abstract: A power device having fast switching characteristic, while keeping EMI noise to a minimum and a method of fabricating the same are provided. The power device includes a first field stop layer having a first conductivity type, a first drift region formed on the first field stop layer and having a first conductivity type in an impurity concentration that is lower than the first field stop layer, a buried region formed on the first drift region and having the first conductivity type in an impurity concentration that is higher than the first drift region, a second drift region formed on the buried region, a power device cell formed at an upper portion of the second drift region, and a collector region formed below the first field stop layer.

Abstract: The present invention relates to a method of manufacturing a light transmitting yttria member by using hot-press sintering. The present invention provides a method of manufacturing light transmitting yttria by performing hot-press sintering on a molded body made of raw material powder including yttria by using a hot-press sintering apparatus, in which the hot-press sintering is performed in a state in which a spacer is interposed between the molded body and a pressing surface of the molded body, and the spacer is made of heat-resistant metal which is substantially unreactive to the molded body at a sintering temperature. According to the present invention, it is possible to manufacture highly compacted light transmitting yttria having light transmittance of 80% by using a single hot-press sintering process.

Abstract: Disclosed herein is a vehicle brake control apparatus, and a brake control method thereof.

Abstract: A semiconductor device having a super junction and a method of manufacturing the semiconductor device capable of obtaining a high breakdown voltage are provided, whereby charge balance of the super junction is further accurately controlled in the semiconductor device that is implemented by an N-type pillar and a P-type pillar. The semiconductor device includes a semiconductor substrate; and a blocking layer including a first conductive type pillar and a second conductive type pillar that extend in a vertical direction on the semiconductor substrate and that are alternately arrayed in a horizontal direction, wherein, in the blocking layer, a density profile of a first conductive type dopant may be uniform in the horizontal direction, and the density profile of the first conductive type dopant may vary in the vertical direction.

Abstract: Disclosed herein is a method of stabilizing alpha-sialon phosphor, including the steps of: mixing raw powder including Si3N4, AlN, a rare-earth metal oxide and calcium nitride (Ca3N2) as a calcium source; heat-treating the raw powder to convert the calcium source into Ca—Al—Si—N based compound comprising CaAlSiN3 or CaAl2Si4N8; and sintering the heat-treated raw powder thereby forming alpha-sialon phosphor. This method is advantageous in that a reliable alpha-sialon phosphor having high photoluminescence intensity can be manufactured regardless of weather, season, environment and the like.

Abstract: A method of manufacturing a silicon carbide (SiC) sintered body and a SiC sintered body obtained by the method are provided. The method includes: preparing a composite powder by subjecting a SiC raw material and a sintering aid raw material to mechanical alloying; and sintering the composite powder, wherein the sintering aid is at least one selected from the group consisting of an Al—C-based material, an Al—B—C-based material, and a B—C-based material. Accordingly, a SiC sintered body that can be sintered at low temperature, can be densified, and has high strength and high electrical conductivity can be prepared.

Abstract: Disclosed herein is a vehicle brake control apparatus, and a brake control method thereof.

Abstract: The present invention discloses a conductive plasma-resistant member including an yttrium oxide. The plasma-resistant member of the present invention includes an yttrium compound which includes a matrix phase consisting of yttrium oxides, and a conductive dispersed phase. According to the present invention, the present invention provides a semiconductor-grade yttria composite which may be used as a plasma-resistant member requiring conductivity like a focus ring.

Abstract: A MIMO antenna for improving isolation is disclosed. The disclosed antenna includes a dielectric feature; a ground plane included in a first layer of the dielectric feature; a first radiator, which is electromagnetically joined with a first feed point, configured to radiate a first RF signal, and joined with the ground plane; a second radiator, which is electromagnetically joined with a second feed point, configured to radiate a second RF signal, and joined with the ground plane; and a connector line, which is joined with a particular point of the first radiator and with a particular point of the second radiator to connect the first radiator with the second radiator. The disclosed antenna can improve isolation properties between multiple antennas and can ensure adequate isolation properties even when the distances between multiple antennas are set to be relatively small.

Abstract: A power device having fast switching characteristic, while keeping EMI noise to a minimum and a method of fabricating the same are provided. The power device includes a first field stop layer having a first conductivity type, a first drift region formed on the first field stop layer and having a first conductivity type in an impurity concentration that is lower than the first field stop layer, a buried region formed on the first drift region and having the first conductivity type in an impurity concentration that is higher than the first drift region, a second drift region formed on the buried region, a power device cell formed at an upper portion of the second drift region, and a collector region formed below the first field stop layer.

Abstract: Disclosed herein is a method of stabilizing alpha-sialon phosphor, including the steps of: mixing raw powder including Si3N4, AlN, a rare-earth metal oxide and calcium nitride (Ca3N2) as a calcium source; heat-treating the raw powder to convert the calcium source into Ca—Al—Si—N based compound comprising CaAlSiN3 or CaAl2Si4N8; and sintering the heat-treated raw powder thereby forming alpha-sialon phosphor. This method is advantageous in that a reliable alpha-sialon phosphor having high photoluminescence intensity can be manufactured regardless of weather, season, environment and the like.