Abstract: A recycled polishing pad includes an upper layer pad and a supplementary pad. The upper layer pad includes a first surface and a second surface opposite to the first surface. The first surface has a plurality of first grooves and the second surface has a plurality of second grooves. The upper layer pad further includes a connecting body connecting the first grooves and the second grooves. The supplementary pad is in contact with the second surface of the upper layer pad. A depth of each of the first grooves is less than a depth of each of the second grooves.

Abstract: A recycled polishing pad includes an upper layer pad and a supplementary pad. The upper layer pad includes a first surface and a second surface opposite to the first surface. The first surface has a plurality of first grooves and the second surface has a plurality of second grooves. The upper layer pad further includes a connecting body connecting the first grooves and the second grooves. The supplementary pad is in contact with the second surface of the upper layer pad. A depth of each of the first grooves is less than a depth of each of the second grooves.

Abstract: An apparatus for polishing chemically and mechanically a wafer includes a membrane supporter and a membrane. The membrane has a pressure portion that is divided into a plurality of regions, and a partition portion extending from the border between the plurality regions. The partition portion of the membrane is fixed to a slider that can move up and down in a guide groove formed in the membrane supporter.

Abstract: An apparatus for polishing chemically and mechanically a wafer includes a membrane supporter and a membrane. The membrane has a pressure portion that is divided into a plurality of regions, and a partition portion extending from the border between the plurality regions. The partition portion of the membrane is fixed to a slider that can move up and down in a guide groove formed in the membrane supporter.

Abstract: A multi characterized CMP (Chemical Mechanical Polishing) pad structure includes a lower pad and an upper pad. The lower pad includes a lower central soft pad region and a lower peripheral soft pad region formed outwardly of the lower central soft pad region, with both the lower central soft pad region and the lower peripheral soft pad region being located in a same plane of the lower pad. The upper pad is disposed on the lower pad, and includes an upper central hard pad region and an upper peripheral soft pad region formed outwardly of the upper central hard pad region, both the upper central hard pad region and the upper peripheral soft pad region being located in the same plane of the upper pad. The lower peripheral soft pad region has a lower hardness factor relative to the lower central soft pad region, and the upper peripheral soft pad region has substantially the same hardness factor as the lower central soft pad region.

Abstract: A multi characterized CMP (Chemical Mechanical Polishing) pad structure includes a lower pad and an upper pad. The lower pad includes a lower central soft pad region and a lower peripheral soft pad region formed outwardly of the lower central soft pad region, with both the lower central soft pad region and the lower peripheral soft pad region being located in a same plane of the lower pad. The upper pad is disposed on the lower pad, and includes an upper central hard pad region and an upper peripheral soft pad region formed outwardly of the upper central hard pad region, both the upper central hard pad region and the upper peripheral soft pad region being located in the same plane of the upper pad. The lower peripheral soft pad region has a lower hardness factor relative to the lower central soft pad region, and the upper peripheral soft pad region has substantially the same hardness factor as the lower central soft pad region.

Abstract: A chemical mechanical polishing apparatus includes a polishing pad, a wafer carrier, a first ring, a second ring, a pad conditioning unit and at least one cleaning solution supply pipe. The first ring surrounds the semiconductor wafer and the edge of the wafer carrier. The second ring surrounds the first ring. The cleaning solution supply pipes are connected to the second ring and/or to the pad conditioning unit to supply the cleaning solution into the gaps between the rings, the wafer carrier and portions of the pad conditioning unit to remove solidified slurry from the gaps.