Patents by Inventor Jin On Kim

Jin On Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020082477
    Abstract: A disposable protective sleeve used for covering laryngoscope handles that is integrally formed of a flexible material. The sheath defines a hollow cavity adapted to enclose a laryngoscope handle. After use, the sleeve is disposed of and the laryngoscope handle is covered with a new sleeve before being used again.
    Type: Application
    Filed: December 21, 2000
    Publication date: June 27, 2002
    Inventor: Yong Jin Kim
  • Publication number: 20020083198
    Abstract: A method of automatically generating IPv6 unicast addresses in IPv6-based next-generation Internet communication environments using a telephone number of a E.164 format allocated to a telephone terminal, and a method of looking up 32-bit IPv4 addresses or 128-bit IPv6 addresses, which are previously allocated to name addresses consisted of E. 164 telephone numbers, from a DNS. An automatic creation relates to a method in which an Internet host as a sender of an IP packet creates an IP address and a search from the DNS indicates a process of looking up an IP address of a receiver. The method automatically generates an IP address of a sender based on a telephone number and a search of an IP address of a receiver using DNS.
    Type: Application
    Filed: July 2, 2001
    Publication date: June 27, 2002
    Inventors: Yong-Woon Kim, Jung-Soo Park, Myung-Ki Shin, Seung-Yun Lee, Yong-Jin Kim, Ki-Shik Park, Chee-Hang Park
  • Publication number: 20020080906
    Abstract: Method for controlling erosion and cracking in a metal component of a nuclear reactor, particularly in the highly concentrated primary and secondary systems of a PWR, comprising creating a catalytic surface on the component; and generating a stoichiometric excess of reductant the water of the reactor to reduce the oxidant concentration at the surface to substantially zero.
    Type: Application
    Filed: December 21, 2000
    Publication date: June 27, 2002
    Inventors: Peter L. Andresen, Young Jin Kim, Robert L. Cowan, Robert J. Law, Samson N. M. N. Hettiarachchi
  • Publication number: 20020081024
    Abstract: An apparatus and method for searching color and shape of image data based on a natural language with Fuzzy concept is disclosed.
    Type: Application
    Filed: December 26, 2001
    Publication date: June 27, 2002
    Inventors: Sung Hee Park, Hyun Jin Kim, Soo Jun Park, Myung Gil Jang
  • Patent number: 6411667
    Abstract: An ECP sensor includes a tubular ceramic probe having a closed tip at one end packed with a metal and metal oxide powder. A metal support tube receives an opposite end of the probe, and is joined thereto by a braze joint therewith. An electrical conductor extends through the support tube and probe, and has an end buried in the powder for electrical contact therewith. A ceramic band bridges the probe and tube at the joint for sealing thereof.
    Type: Grant
    Filed: October 9, 2001
    Date of Patent: June 25, 2002
    Assignee: General Electric Company
    Inventors: Young Jin Kim, Eric Moran, Donald Allan Hale
  • Publication number: 20020071488
    Abstract: An encoding apparatus and method for an orientation interpolator node are provided. The encoding apparatus for an orientation interpolator node, which provides information on the rotation of an object in a 3-dimensional space, includes a field data input unit for extracting field data to be encoded at present from a key which indicates information on a position on a time axis where a change of a rotational movement on a time axis occurs and key values which indicate rotation information corresponding to the position information, by parsing the orientation interpolator node; an adaptive differential pulse code modulation (ADPCM) processing unit for converting the key value data into a quaternion, and then ADPCM processing the quaternion using a rotation differential converting matrix, and differential pulse code modulation (DPCM) processing the key data; and a quantizing unit for quantizing the key data and key value data and outputting the quantized data.
    Type: Application
    Filed: October 19, 2001
    Publication date: June 13, 2002
    Inventors: Sung-jin Kim, Do-kyoon Kim, Seok-yoon Jung, Sang-oak Woo
  • Publication number: 20020070818
    Abstract: An encoding/decoding apparatus and method for an orientation interpolator node are provided. The encoding/decoding apparatus for an orientation interpolator node, which provides rotational information of an object in a 3-dimensional space, is formed of “key information” which indicates a time when a rotational movement occurs and “key value information” which indicates a rotational posture corresponding to the time. A predictive coding apparatus is used in the encoding process for compressing the information of the key and key value information. Therefore, in encoding an input orientation interpolator node in an information compression method of a predictive encoding method, the efficiency of encoding is improved and an reverse rotation due to an encoding error from lossy coding can be corrected.
    Type: Application
    Filed: October 19, 2001
    Publication date: June 13, 2002
    Inventors: Sung-Jin Kim, Do-Kyoon Kim, Seok-Yoon Jung, Sang-Oak Woo
  • Publication number: 20020072156
    Abstract: The present invention relates a method of forming a gate electrode in semiconductor devices by which given regions of the hard mask layer, the tungsten film and the tungsten nitride film, and a given thickness of the polysilicon film are etched to form the spacer at the sidewall of the first pattern, a spacer is formed at the sidewall of the first pattern and the remaining polysilicon film and gate oxide film are etched using the first pattern at the sidewall of which the spacer is formed as a mask to form a dual gate electrode. Therefore. the present invention can prevent oxidization of a tungsten film without implementing a selective oxidization process. Further, the present invention can prevent intrusion of boron ions implanted into a polysilicon film into a gate oxide film by not performing the selective oxidization process.
    Type: Application
    Filed: December 3, 2001
    Publication date: June 13, 2002
    Applicant: Hynix Semiconductor Inc.
    Inventors: Seung Chul Lee, Dong Jin Kim
  • Publication number: 20020068004
    Abstract: The present invention relates to a method of controlling the microstructures of Cu—Cr-based contact materials for vacuum interrupters, in which a heat-resistant element is added to the Cu—Cr-based contact materials to obtain an excellent current interrupting characteristic and voltage withstanding capability, and contact materials manufactured thereby. The method of controlling the microstructures of Cu—Cr-based contact materials includes the steps of mixing a copper powder used as a matrix material, a chromium powder improving an electrical characteristic of the contact material and a heat-resistant element powder making the chromium particles in the matrix material fine to thereby obtain mixed powder, and subjecting the mixed powder to one treatment selected from sintering, infiltration and hot pressing to thereby obtain a sintered product.
    Type: Application
    Filed: April 10, 2001
    Publication date: June 6, 2002
    Inventors: Jung Mann Doh, Jong Ku Park, Mi Jin Kim
  • Publication number: 20020066918
    Abstract: A cylindrical storage electrode in a semiconductor device is manufactured by forming a contact hole in a poly oxide film and by forming a first thin film on the film and in the hole. Next, a core oxide film and an anti-reflective coating film are formed on the first thin film to determine the height of the cylinder. A pattern is then formed by etching the anti-reflective coating film, core oxide film and the first thin film such that the poly oxide film is exposed. A second thin film is formed on the overall resultant structure, and a tungsten silicide layer is formed on the second thin film. Inner and outer walls of the cylinder are then formed by blanket-etching the tungsten silicide film and the second thin film such that the core oxide film is exposed. After the core oxide film is removed, a selective metastable polysilicon (SMPS) process is performed so that different grain growths are generated at the inner and outer walls of the cylinder. A storage electrode is then formed by annealing the cylinder.
    Type: Application
    Filed: January 11, 2002
    Publication date: June 6, 2002
    Applicant: Hynix Semiconductor Inc.
    Inventors: Cha Deok Dong, Seung Cheol Lee, Sang Wook Park, Dong Jin Kim
  • Publication number: 20020066533
    Abstract: The invention provides method of etching and cleaning objects contained in a vessel, including: etching the objects by providing etching solution into the vessel; exiting the etching solution from the vessel by providing pressurized gas into the vessel; cleaning the objects by providing cleaning solution into the vessel; and draining the cleaning solution from the vessel. By exiting the etching with pressurized gas such as nitrogen gas, there is no density difference of the etching solution through out the objects, leading to uniform etching of the objects.
    Type: Application
    Filed: December 4, 2000
    Publication date: June 6, 2002
    Inventors: Jeong-Jin Kim, I1-Ryong Park, Hae-Joo Choi
  • Patent number: 6399165
    Abstract: A liquid crystal display device comprises first and second substrates, an alignment layer including a pyranose polymer or a furanose polymer on at least one of the first and second substrates, and a liquid crystal layer between the first and second substrates. The liquid crystal display device is characterized by excellent thermostability, superior anchoring energy and uniform alignment of the liquid crystal achieved in a reduced treatment time without creating any flowing effect in the liquid crystal.
    Type: Grant
    Filed: November 16, 1998
    Date of Patent: June 4, 2002
    Assignee: LG. Philips LCD Co., Ltd.
    Inventors: Soon Bum Kwon, Kyeong Jin Kim, Young Seok Choi, Gerus Igor Iranovich, Andrey Dyadyusha, Yuriy A. Reznikov
  • Publication number: 20020064371
    Abstract: The present invention relates to a method and apparatus of recording a directly-received digital television broadcast signal. This method demodulates a received high definition digital television broadcast signal, extracts transport stream belonging to a chosen channel among the demodulated data stream, analyzes data of the transport stream, extracts and creates data stream- and/or recording-related information, and writes the data stream- and/or recording-related information and the extracted transport stream to a recording medium in a format suitable to the extracted and created information. According to the present method and apparatus, it is possible to record a high definition digital television broadcast signal without any intermediary set top box to a high-density recording medium in the appropriate recording format as well as to conduct a trick play for recorded television broadcast signal smoothly with such recorded format and the data stream- and/or recording-related information.
    Type: Application
    Filed: June 1, 2001
    Publication date: May 30, 2002
    Applicant: LG Electronics Inc.
    Inventors: Kang Soo Seo, Jea Yong Yoo, Byung Jin Kim, Hyung Sun Kim
  • Publication number: 20020063334
    Abstract: An integrated circuit device includes a substrate that has a pattern formed thereon. The pattern may have two or more mesa regions. A spin on glass insulation layer is disposed between the pair of mesa regions and a second insulation layer is disposed on the spin on glass insulation layer, at least partially in the gap between the mesas, to form a composite insulation layer. The second insulation layer may be SiO2, SiN, and/or SiON. The spin on glass may be polysilazane, hydro silsesquioxane, silicate, and/or methyl silsesquioxane.
    Type: Application
    Filed: November 5, 2001
    Publication date: May 30, 2002
    Inventors: Hong-Jae Shin, Won-Jin Kim
  • Publication number: 20020065210
    Abstract: A TNFR homolog, identified as DcR3, is provided. Nucleic acid molecules encoding DcR3, chimeric molecules and antibodies to DcR3 are also provided.
    Type: Application
    Filed: June 28, 2001
    Publication date: May 30, 2002
    Applicant: Genentech, Inc.
    Inventors: Avi J. Ashkenazi, David Botstein, Kelly H. Dodge, Audrey Goddard, Austin L. Gurney, Kyung Jin Kim, David A. Lawrence, Robert Pitti, Margaret A. Roy, Daniel B. Tumas, William I. Wood
  • Publication number: 20020065045
    Abstract: There is provided an information sharing method by Bluetooth™ wireless communication. To share information with a slave by Bluetooth™ wireless communication protocol, a portable cellular phone equipped with a Bluetooth™ module acting as a master in a piconet or scatternet receives data from a mobile communication system and stores the received data. The portable phone determines whether to transmit the data to the slave by Bluetooth™ wireless communication. If the data is to be transmitted to the slave, the portable phone converts the data to a data packet for Bluetooth™ communication and determines whether the portable phone is connected to the slave by an ACL (Asynchronous ConnectionLess) link or an SCO (Synchronous Connection-Oriented) link. If the ACL link is connected between the portable phone and the slave, another ACL link is established and the portable phone transmits the data packet to the slave on the established ACL link.
    Type: Application
    Filed: November 5, 2001
    Publication date: May 30, 2002
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Sung-Jin Kim
  • Publication number: 20020064968
    Abstract: Methods are provided for forming integrated circuit devices. A spin on glass (SOG) insulating layer is formed on an integrated circuit substrate. The SOG insulating layer includes sidewalls that define contact holes therein and spacers are formed on the sidewalls of the SOG insulating layer. Integrated circuit devices are also provided. The integrated circuit devices include an integrated circuit substrate, a spin on glass (SOG) insulating layer on the integrated circuit substrate. The SOG insulating layer includes sidewalls that define contact holes therein and spacers are provided on sidewalls of the SOG insulating layer.
    Type: Application
    Filed: October 30, 2001
    Publication date: May 30, 2002
    Inventors: Won-Jin Kim, Jin-Gi Hong
  • Patent number: 6395427
    Abstract: A negative active material for a rechargeable lithium battery which exhibits good discharge capacity and charge and discharge efficiency, and enables the use of all types of electrolytes. The active material includes a crystalline carbon core and a semi-crystalline carbon shell. The semi-crystalline carbon shell includes at least one element or a compound of at least two different types of elements, and has a turbostratic or half onion-sheath. The compound includes only element. The element serves graphitization catalyst and causes a change in a structure of surrounding carbon. In particular, the negative active material includes metal boride.
    Type: Grant
    Filed: August 29, 2000
    Date of Patent: May 28, 2002
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Kyou-Yoon Sheem, Sang-Young Yoon, Wan-Uk Choi, Jae-Yul Ryu, Sang-Jin Kim
  • Patent number: 6395947
    Abstract: A method for preparing diarylethane is disclosed. Alkylation is carried out in a continuous type process at 100-300° C. under a pressure of 1-45 kg/cm2 G in the presence of a solid acid catalyst while a reactant mixture comprising alpha-methylbenzylalcohol and at least one aromatic hydrocarbon at a volume ratio of 1:1-10, is fed at a weight hourly space velocity of 0.1-10 h−1. The alpha-methylbenzylalcohol acts as an ailylating agent. Diarylethane can be prepared at a low cost, but a high production yield by the method.
    Type: Grant
    Filed: July 11, 2000
    Date of Patent: May 28, 2002
    Assignee: SK Corporation
    Inventors: Byong Sung Kwak, Seung Gweon Hong, Tae Jin Kim
  • Publication number: 20020061559
    Abstract: A TNFR homolog, identified as DcR3, is provided. Nucleic acid molecules encoding DcR3, chimeric molecules and antibodies to DcR3 are also provided.
    Type: Application
    Filed: June 28, 2001
    Publication date: May 23, 2002
    Applicant: Genentech, Inc.
    Inventors: Avi J. Ashkenazi, David Botstein, Kelly H. Dodge, Audrey Goddard, Austin L. Gurney, Kyung Jin Kim, David A. Lawrence, Robert Pitti, Margaret A. Roy, Daniel B. Tumas, William I. Wood