Abstract: A soft-switching power converter includes a main switch, an energy-releasing switch, and an inductive coupled unit. The main switch is a controllable switch. The energy-releasing switch is coupled to the main switch. The inductive coupled unit is coupled to the main switch and the energy-releasing switch. The inductive coupled unit includes a first inductance, a second inductance coupled to the first inductance, and an auxiliary switch unit. The auxiliary switch unit is coupled to the second inductance to form a closed loop. The main switch and the energy-releasing switch are alternately turned on and turned off. The auxiliary switch unit is controlled to start turning on before the main switch is turned on so as to provide at least one current path.

Abstract: A soft-switching power converter includes a main switch, an energy-releasing switch, and an inductive coupled unit. The main switch is a controllable switch. The energy-releasing switch is coupled to the main switch. The inductive coupled unit is coupled to the main switch and the energy-releasing switch. The inductive coupled unit includes a first inductance, a second inductance coupled to the first inductance, and an auxiliary switch unit. The auxiliary switch unit is coupled to the second inductance to form a closed loop. The main switch and the energy-releasing switch are alternately turned on and turned off. The auxiliary switch unit is controlled to start turning on before the main switch is turned on so as to provide at least one current path.

Abstract: Embodiments of present invention provide a magnetic tunnel junction (MTJ) structure. The MTJ structure includes a MTJ stack, the MTJ stack including a tunnel barrier layer on a reference layer and a free layer on the tunnel barrier layer, wherein the free layer includes multiple sub free layers, the multiple sub free layers being multiple ferromagnetic strips placed parallel to each other on the tunnel barrier layer, the multiple ferromagnetic strips having respective first ends connected to a first electrode and respective second ends connected to a second electrode. A method of forming the MTJ structure is also provided.

Abstract: An integrated circuit includes a field effect transistor (FET) and a phase change memory (PCM) cell. The PCM cell includes a heater, wherein a bottom surface of the heater is at or below a top surface of the FET.

Abstract: A method for power saving and encryption during analysis of media captured by an information capture device using a partitioned neural network includes replicating, by an information capture device, an artificial neural network (ANN) from a computer server to the information capture device. The ANN on the computer server and a replicated ANN, both, include M layers. The method further includes, in response to captured data being input to be processed, partially processing, by the information capture device, the captured data by executing a first k layers using the replicated ANN, wherein only the k layers are selected to execute on the information capture device. The method further includes transmitting, by the information capture device, an output of the k-th layer to the computer server, which partially processes the captured data by executing the remainder of the M layers using the ANN and the output of the k-th layer.

Abstract: A semiconductor integrated circuit device includes: an active bridge; a first chiplet and a second chiplet mounted onto the active bridge; and a short-to-long converter circuit (SLCC) that has analog and digital portions. The active bridge includes at least the analog portion of the SLCC, which is electrically connected to at least the first chiplet; and a short-reach physical layer that electrically connects the first chiplet and the second chiplet. The first chiplet includes a first logic core; a first chiplet interface that is electrically connected between the first logic core and the SLCC; and a second chiplet interface that is electrically connected between the first logic core and the second chiplet. The second chiplet includes a second logic core; and a third chiplet interface that is electrically connected between the second logic core and the second chiplet interface. The active bridge also can include a built-in-self-test (BIST) circuit.

Abstract: An identity certificate may be issued to a blockchain node. The issuance may include issuing a first identity certificate to a first terminal and receiving a second identity certificate issuance request that is from the first terminal. A second identity certificate may be issued to the first terminal, and a third identity certificate issuance request is received from the second terminal. A third identity certificate is issued to the second terminal, so that the second terminal forwards the third identity certificate to the third terminal.

Abstract: A structure including alternating layers of phase change material layers and dielectric encapsulated heater element layers, the alternating layers of phase change material layers and the dielectric encapsulated heater element layers are sandwiched between a first electrode and a second electrode. A structure including horizontally aligned alternating layers of phase change material layers and dielectric encapsulated heater element layers, the alternating layers of phase change material layers and the dielectric encapsulated heater element layers are sandwiched between a first electrode and a second electrode. A method including forming alternating layers of phase change material layers and dielectric encapsulated heater element layers, the alternating layers of phase change material layers and the dielectric encapsulated heater element layers are sandwiched between a first electrode and a second electrode.

Abstract: A memory device and method of forming a projection liner under a mushroom phase change memory device with sidewall electrode process scheme to provide self-aligned patterning of resistive projection liner during sidewall electrode formation.

Abstract: A phase change memory cell for a semiconductor device that includes a heater element on a first conductive layer with a spacer surrounding sides of the heater element. The phase change memory cell includes a first dielectric layer on the conductive layer and on a bottom portion of the spacer surrounding the heater element and a second dielectric layer on the first dielectric layer surrounding a top portion of the heater element. The phase change memory cell includes a phase change material on a top surface of the heater element and on the second dielectric material.

Abstract: A phase change memory (PCM) cell comprises a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, a first phase change layer positioned between the first electrode and the second electrode and being comprised of a first phase change material, and a second phase change layer positioned between the first electrode and the second electrode and being comprised of a second phase change material. The first phase change material has a first resistivity, the second phase change material has a second resistivity, and wherein the first resistivity is at least two times the second resistivity.

Abstract: Memory cells and methods of forming the same include forming a hole in an interlayer dielectric to expose an end of a conductive top electrode. A phase change material is conformally deposited on surfaces of the hole. A remaining portion of the hole is filled with a dielectric material after conformally depositing the phase change material.

Abstract: A structure comprising a top electrode and a bottom electrode. The structure further comprises a multilayer stack disposed between the top electrode and the bottom electrode, where the multilayer stack comprises alternating confinement layers and phase-change material layers, and where at least two of the phase-change material layers have different doping concentrations of at least one dopant.

Abstract: A structure including an inner electrode and an outer electrode on a substrate and a phase change material layer, the phase change material layer vertically aligned above both the inner electrode and the outer electrode. A structure including an inner electrode and an outer electrode on a substrate and a phase change material layer, the phase change material layer vertically aligned above both the inner electrode and the outer electrode, where the inner electrode and the outer electrode are on the same horizontal plane. A method including forming an inner electrode and an outer electrode simultaneously on a substrate, forming a phase change material layer above both the inner electrode and the outer electrode.

Abstract: A first phase change material layer vertically aligned above a bottom electrode, a dielectric layer vertically aligned above the first phase change material layer, a second phase change material layer vertically aligned above the dielectric layer, an inner electrode physically and electrically connected to the first phase change material layer and the second phase change material layer, the inner electrode surrounded by the dielectric layer, a top electrode vertically aligned above the second phase change material layer. A first phase change material layer vertically aligned above a bottom electrode, a filament layer vertically aligned above the first phase change material layer, a second phase change material layer vertically aligned above the filament layer, an inner break in the filament layer connecting the first phase change material layer and the second phase change material layer, a top electrode vertically aligned above the second phase change material layer.

Abstract: A phase change memory (PCM) cell comprises a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, a first phase change layer positioned between the first electrode and the second electrode and being comprised of a first phase change material, and a second phase change layer positioned between the first electrode and the second electrode and being comprised of a second phase change material. The first phase change material has a first resistivity, the second phase change material has a second resistivity, and wherein the first resistivity is at least two times the second resistivity.

Abstract: A phase change memory (PCM) cell comprises a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, a first phase change layer positioned between the first electrode and the second electrode and being comprised of a first phase change material, and a second phase change layer positioned between the first electrode and the second electrode and being comprised of a second phase change material. The first phase change material has a first resistivity, the second phase change material has a second resistivity, and wherein the first resistivity is at least two times the second resistivity.

Abstract: A heater, a system, and a method for linearly changing the resistance of the phase change memory through a graded heater. The system may include a phase change memory. The phase change memory may include a dielectric. The phase change memory may also include a heater patterned on the dielectric, the heater including: an outside conductive heating layer that has a higher resistance than other layers of the heater, and an inside conductive heating layer that has a lower resistance than the outside conductive heating layer, where the outside conductive heating layer is at an outside area of the heater and the inside conductive heating layer is at an inside area of the heater. The phase change memory may also include a phase change material proximately connected to the heater. The phase change memory may also include a top electrode proximately connected to the phase change material.

Abstract: A phase change memory cell for a semiconductor device that includes a heater element on a first conductive layer with a spacer surrounding sides of the heater element. The phase change memory cell includes a first dielectric layer on the conductive layer and on a bottom portion of the spacer surrounding the heater element and a second dielectric layer on the first dielectric layer surrounding a top portion of the heater element. The phase change memory cell includes a phase change material on a top surface of the heater element and on the second dielectric material.

Abstract: A method in an aircraft for activating functions on external equipment is provided. The method includes: encoding, in an optical code, information pertaining to an aircraft alert message displayed on a cockpit display; causing a graphical element to be displayed that indicates that the optical code is available for display; receiving the selection of the graphical element; causing the optical code to be displayed responsive to the selection of the graphical element; capturing, by a mobile device, a visual image of the optical code displayed on the cockpit display; decoding, by the mobile device using the visual image, the optical code to identify information pertaining to the displayed aircraft alert message; retrieving, by the mobile device, a checklist containing instructions for responding in view of the information pertaining to the displayed aircraft alert message; and causing the retrieved checklist to be displayed on a display on the mobile device.