Abstract: A shape-molding structure of a memory card comprises a circuit substrate, at least one chip, and an encapsulant covering. The upper and lower surfaces of the circuit substrate have a circuit layer and a plurality of electric contacts, respectively. The chip is located on the upper surface of the circuit substrate and electrically connected with the circuit layer. The encapsulant covering is formed by using a mold to press encapsulant entering at least one encapsulant inlet provided on at least one side surface of the circuit substrate. The encapsulant covering encapsulates all the above components with only the electric contacts exposed. A trace mark of the encapsulant inlet remaining on the encapsulant covering is then cut to obtain a shape-molding structure of memory card with an smooth and intact outer appearance.

Abstract: A shape-molding structure of a memory card comprises a circuit substrate, at least one chip, and an encapsulant covering. The upper and lower surfaces of the circuit substrate have a circuit layer and a plurality of electric contacts, respectively. The chip is located on the upper surface of the circuit substrate and electrically connected with the circuit layer. The encapsulant covering is formed by using a mold to press encapsulant entering at least one encapsulant inlet provided on at least one side surface of the circuit substrate. The encapsulant covering encapsulates all the above components with only the electric contacts exposed. A trace mark of the encapsulant inlet remaining on the encapsulant covering is then cut to obtain a shape-molding structure of memory card with an smooth and intact outer appearance.

Abstract: A shape-molding structure of a memory card comprises a circuit substrate, at least one chip, and an encapsulant covering. The upper and lower surfaces of the circuit substrate have a circuit layer and a plurality of electric contacts, respectively. The chip is located on the upper surface of the circuit substrate and electrically connected with the circuit layer. The encapsulant covering is formed by using a mold to press encapsulant entering at least one encapsulant inlet provided on at least one side surface of the circuit substrate. The encapsulant covering encapsulates all the above components with only the electric contacts exposed. A trace mark of the encapsulant inlet remaining on the encapsulant covering is then cut to obtain a shape-molding structure of memory card with an smooth and intact outer appearance.

Abstract: A package for the storage and display of products such as video game cartridges and compact disks. The package consists of an elongated strip of transparent flexible plastic or similar material having a series of pockets or pouches attached to the the strip. The package may be hung from a hole at one end of the strip to display the contents of each of the pockets, the pockets all opening upwards towards the end of the strip from which the package is hung. The strip includes hinging portions between the pockets so that the cartridges or disks in the pockets can be folded together, in a zig-zag or accordion fashion to form a compact stack.

Abstract: An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppm/.degree.C.

Abstract: An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppm/.degree.C.