Abstract: A silicon-etchant composition according to an embodiment may include quaternary alkyl ammonium hydroxide, an amine-based compound, and two or more types of nonionic surfactants represented by Chemical Formula 1 and having different lengths of a hydrophilic group. Accordingly, the silicon-etchant composition having improved etch rate and etching selectivity is provided.

Abstract: The present invention relates to a composition comprising, as an active ingredient, a stem cell-derived exosome having an improved skin regeneration, whitening, or antioxidation function. More specifically, the present invention relates to a cosmetic composition or pharmaceutical composition for skin regeneration, whitening, antioxidation, or wound treatment, comprising urine-derived stem cell-derived exosome as an active ingredient.

Abstract: A reticle assembly includes a reticle plate; a reticle pattern provided on the reticle plate; and a pellicle member provided on the reticle pattern and the reticle plate. The pellicle member includes: a pellicle provided on the reticle pattern; and a pellicle frame provided on the reticle plate and surrounding the reticle pattern, and supporting the pellicle to be space apart from the reticle pattern and the reticle plate.

Abstract: A phase shift mask includes a substrate, a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern, and a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern.

Abstract: A phase shift mask includes a substrate, a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern, and a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern.

Abstract: A phase shift mask includes a substrate, a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern, and a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern.

Abstract: A phase shift mask includes a substrate, a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern, and a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern.