Abstract: The present disclosure relates to a method for managing an object, an apparatus for the same, a computer program for the same, and a recording medium storing computer program thereof. A method for managing an object using a trace-identifier (T-ID) according to the present disclosure may comprise: updating T-ID information for the object at a timepoint at which the object is saved after the object is opened at an endpoint; writing the updated T-ID information as metadata of the object; and transmitting the metadata including the T-ID information to a server.

Abstract: The present invention relates to a composition comprising, as an active ingredient, a stem cell-derived exosome having an improved skin regeneration, whitening, or antioxidation function. More specifically, the present invention relates to a cosmetic composition or pharmaceutical composition for skin regeneration, whitening, antioxidation, or wound treatment, comprising urine-derived stem cell-derived exosome as an active ingredient.

Abstract: A reticle assembly includes a reticle plate; a reticle pattern provided on the reticle plate; and a pellicle member provided on the reticle pattern and the reticle plate. The pellicle member includes: a pellicle provided on the reticle pattern; and a pellicle frame provided on the reticle plate and surrounding the reticle pattern, and supporting the pellicle to be space apart from the reticle pattern and the reticle plate.

Abstract: A phase shift mask includes a substrate, a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern, and a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern.

Abstract: A phase shift mask includes a substrate, a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern, and a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern.

Abstract: A phase shift mask includes a substrate, a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern, and a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern.

Abstract: A phase shift mask includes a substrate, a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern, and a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern.