Patents by Inventor Jin-Seog Choi

Jin-Seog Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a semiconductor device having a multilayer structure including a dual-layer silicide
    Patent number: 6774023
    Abstract: A semiconductor device which includes a silicon substrate, an oxide layer formed on the silicon substrate, a polysilicon layer formed on the oxide layer, a first metal silicide layer formed on the polysilicon layer, and a second metal silicide layer formed on the first metal silicide layer, and a method for fabricating the same. The first metal silicide layer is preferably comprised of a metal silicide, such as molybdenum, tungsten, or tantalum silicide, having a melting point which is higher than that of the second metal silicide layer. The second metal silicide layer is preferably comprised of titanium silicide. In an embodiment, the method comprises forming the polysilicon layer on the oxide layer, depositing a tantalum layer on the polysilicon layer, rapidly annealing the resulting structure.
    Type: Grant
    Filed: May 28, 1993
    Date of Patent: August 10, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Su-Hyon Paek, Jin-Seog Choi