Abstract: An apparatus and method for executing code are provided. The apparatus includes a memory manager that allocates a stack in memory to store processed data that needs to be retained; a loop generator that divides program code programmed to be processed in parallel into regions based on a barrier function, transforms a region that includes the processed data that needs to be retained in the stack into a first coalescing loop, and transforms a region that uses the processed data stored in the stack into a second coalescing loop such that the transformed program code may be serially processed; and a loop changer that reverses a processing order of the second coalescing loop in comparison to a processing order of the first coalescing loop.

Abstract: A method and apparatus for translating a multithread program code are provided. The method includes: dividing a multithread program code into a plurality of statements according to a synchronization point; generating at least one loop group by combining one or more adjacent statements based on a number of instructions included in the plurality of statements; expanding or renaming variables in each of the plurality of statements so that each statement included in the at least one loop group is executed with respect to a work item of a different work group; and enclosing each of the generated at least one loop group respectively with a work item coalescing loop.

Abstract: Disclosed is an apparatus for preparing silicon nanoparticles. The apparatus includes a corona discharge section charging silicon nanoparticles to exhibit unipolarity in order to prevent agglomeration of the silicon nanoparticles after the silicon nanoparticles are generated from an injected gas by plasma reaction of an inductively coupled plasma (ICP) coil. The apparatus may facilitate grain size control of silicon nanoparticles while improving discharge performance of a mesh filter for collection of generated nanoparticles by preventing agglomeration of the silicon nanoparticles generated by plasma reaction using inductively coupled plasma (ICP), and may permit replacement of the mesh filter even during operation of the apparatus, thereby improving productivity while reducing manufacturing costs.

Abstract: A debugging apparatus and method are provided. The debugging apparatus may include a breakpoint setting unit configured to store a first instruction corresponding to a breakpoint in a table, stop a program currently being executed, and insert a breakpoint instruction including current location information of the first instruction into the breakpoint; and an instruction execution unit configured to selectively execute one of the breakpoint instruction and the first instruction according to a value of a status bit.

Abstract: An apparatus and method for generating vector code are provided. The apparatus and method generate vector code using scalar-type kernel code, without user's changing a code type or modifying data layout, thereby enhancing user's convenience of use and retaining the portability of OpenCL.

Abstract: An apparatus and method for dynamically determining the execution mode of a reconfigurable array are provided. Performance information of a loop may be obtained before and/or during the execution of the loop. The performance information may be used to determine whether to operate the apparatus in a very long instruction word (VLIW) mode or in a coarse grained array (CGA) mode.

Abstract: A method of manufacturing a flip chip package includes: providing a board including a conductive pad disposed inside a mounting region of the board on which the electronic device is to be mounted, and a connection pad disposed outside the mounting region; forming a resin layer on the board; forming a trench by removing a part of the resin layer or forming an uneven portion at a portion of a surface of the resin layer; forming, on the trench or uneven portion, a dam member preventing leakage of an underfill between the mounting region and the connection pad; and mounting the electronic device on the mounting region.

Abstract: A guide thimble plug for a nuclear fuel assembly is provided, in which an internal threaded hole is formed through a main body so that the main body is coupled to a bottom nozzle by a screw coupling. An upper insert part is formed in the upper end of the main body. The upper insert part is inserted into a shock absorption tube. A thermal deformation prevention part is formed on the main body below the upper insert part and is recessed inward from the outer surface of the main body such that, when the main body is coupled to the guide thimble, a gap is defined between the thermal deformation prevention part and the guide thimble. The guide thimble and the shock absorption tube can be reliably fastened to the bottom nozzle, and thermal deformation of the guide thimble can be minimized.

Abstract: A fusing apparatus to fuse a toner image transferred to a printing medium by applying heat and pressure. The fusing apparatus includes a separation member that is rotatably mounted on a rotation axis to separate the printing medium from one of a heating roller and a pressing roller. The separation member includes a hollow portion into which the rotation axis is inserted, and a separation portion that contacts an outer circumference of the heating roller. The separation member is installed so as to be pitched around the rotation axis and a pitching axis having an inclination angle within a range of ±10° with respect to a line that connects a contact point between the separation portion and the outer circumference of the roller from which the printing medium is to be separated and a center of the roller from which the printing medium is to be separated.

Abstract: Apparatus and method for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber maintaining a vacuum atmosphere; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit placed on a first electron beam-irradiating region corresponding to the first electron gun and in which powdery raw silicon is placed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun and connected to the silicon melting unit via a runner. The unidirectional solidification unit is formed at a lower part thereof with a cooling channel and is provided therein with a start block driven in a downward direction.

Abstract: The present invention relates to a method for preparing composites of substrate-molecular sieve, in particular, to a method for preparing a composite of substrate-molecular sieve, which comprises applying a physical pressure to molecular sieve crystals against a substrate to form a chemical bond between the molecular sieve crystal and the substrate. The present invention requiring no solvents, reactors and other equipments enables molecular sieve crystals to be stably attached to the surface of substrates through various chemical bonds, particularly ionic present invention ensures the synthesis of substrate-molecular sieve composites with enhanced attachment rate, degree of lateral close packing (DCP) and attachment strength in more time-saving and energy-saving manners. The present method works well for molecular sieve crystals with lager sizes (e.g., more than 3 ?m) with no generation of parasitic crystals.

Abstract: A processing apparatus includes a loading chamber; a buffer chamber connected to the loading chamber; a first process chamber connected to the buffer chamber; and an unloading chamber connected to the first process chamber, wherein a processing path through the processing apparatus is a forward in-line path in a direction through the loading chamber, the buffer chamber, the first process chamber, and the unloading chamber.

Abstract: An image forming apparatus includes a heat roller heated to a preset temperature; a pressure roller for having conductivity and forming a nip by pressure-contacting with the heat roller; a power supply unit to apply a bias voltage to the pressure roller; and a controller to, when a printing paper enters the nip, control the power supply unit to apply the bias voltage to the pressure roller. When a time interval is longer than a preset time, the controller can control the power supply unit not to apply the bias voltage when the printing paper is not placed in the nip, and when the time interval is shorter than the preset time, the controller can control the power supply unit to apply the bias voltage when the printing paper is not placed in the nip.

Abstract: A liquid crystal display device includes an array substrate and a color filter substrate, a plurality of gate lines and a plurality of data lines formed on the array substrate such that the gate lines and the data lines intersect each other to define a plurality of pixel regions, a plurality of thin film transistors formed at respective intersections of the gate lines and the data lines, a liquid crystal layer interposed between the array and color filter substrates, and a plurality of repair patterns formed on the first substrate. Each of the plurality of the repair patterns crosses a corresponding one of the data lines, and is along and adjacent to a corresponding one of the gate lines, such that the repair pattern includes protruding ends that protrude from the corresponding data line to repair a defect on the pixel regions.

Abstract: A method of manufacturing a flip chip package includes: providing a board including a conductive pad disposed inside a mounting region of the board on which the electronic device is to be mounted, and a connection pad disposed outside the mounting region; forming a resin layer on the board; forming a trench by removing a part of the resin layer or forming an uneven portion at a portion of a surface of the resin layer; forming, on the trench or uneven portion, a dam member preventing leakage of an underfill between the mounting region and the connection pad; and mounting the electronic device on the mounting region.

Abstract: A liquid crystal display device includes an array substrate and a color filter substrate, a plurality of gate lines and a plurality of data lines formed on the array substrate such that the gate lines and the data lines intersect each other to define a plurality of pixel regions, a plurality of thin film transistors formed at respective intersections of the gate lines and the data lines, a liquid crystal layer interposed between the array and color filter substrates, and a plurality of repair patterns formed on the first substrate. Each of the plurality of the repair patterns crosses a corresponding one of the data lines, and is along and adjacent to a corresponding one of the gate lines, such that the repair pattern includes protruding ends that protrude from the corresponding data line to repair a defect on the pixel regions.

Abstract: The present disclosure provides a method of producing high purity SiOx nanoparticles with excellent volatility and an apparatus for producing the same, which enables mass production of SiOx nanoparticles by melting silicon through induction heating and injecting gas to a surface of the molten silicon. The apparatus includes a vacuum chamber, a graphite crucible into which raw silicon is charged, the graphite crucible being mounted inside the vacuum chamber, an induction melting part which forms molten silicon by induction heating of the silicon material received in the graphite crucible, a gas injector which injects a gas into the graphite crucible to be brought into direct contact with a surface of the molten silicon, and a collector disposed above the graphite crucible and collecting SiOx vapor produced by reaction between the molten silicon and the injected gas.

Abstract: Apparatus and method for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber maintaining a vacuum atmosphere; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit placed on a first electron beam-irradiating region corresponding to the first electron gun and in which powdery raw silicon is placed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun and connected to the silicon melting unit via a runner. The unidirectional solidification unit is formed at a lower part thereof with a cooling channel and is provided therein with a start block driven in a downward direction.

Abstract: Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar.

Abstract: An organic light emitting device having an organic light emitting diode (OLED) panel that displays an image corresponding to a data signal, a data driver that receives image data and a gamma voltage and generates the data signal, and a gamma voltage generator that generates a gamma voltage corresponding to one selected from a plurality of gamma sets corresponding to a plurality of coordinates on the color coordinate system, wherein when a first gamma set corresponding to a first coordinate on the color coordinate system and the image data corresponds to the first coordinate, and the OLED panel displays an image corresponding to a second coordinate different from the first coordinate, the gamma voltage generator generates the gamma voltage corresponding to a second gamma set corresponding to a third coordinate symmetrical to the second coordinate with respect to the first coordinate.