Abstract: Provided herein are a method for producing a hydrocarbon adsorption catalyst includes dealuminated zeolite by heat-treating a zeolite in moisture-containing air at a first temperature to remove a portion of aluminum included in the zeolite, and supporting a metal on a carrier including the zeolite after the heat-treating and a hydrocarbon adsorption catalyst prepared using the same method. The metal-supported support may be additionally heat-treated in moisture-containing air at a second temperature that is higher than the first temperature.

Abstract: A semiconductor device includes a substrate with a conductive pattern. A semiconductor die is electrically connected to the substrate and both the semiconductor die and the substrate are at least partially covered by a package body. In some examples, through-mold vias are formed in the package body to provide electrical signal paths from an exterior surface thereof to the conductive pattern of the substrate. In some examples, through-mold vias are included in the package body to provide electrical signal paths between the semiconductor die and an exterior surface of the package body. In some examples, an interposer is electrically connected to the through-mold vias and may be covered by the package body and/or disposed in spaced relation thereto. In some examples, the interposer may not be electrically connected to the through-mold vias but may have one or more semiconductor dies of the semiconductor device electrically connected thereto.

Abstract: An apparatus for providing brain lesion information based on an image includes a magnetic resonance angiography (MRA) provider configured to provide an environment capable of displaying 3D time-of-flight magnetic resonance angiography (3D TOF MRA) using user input, a brain lesion input unit configured to generate and manage a brain lesion image, a maximum intensity projection (MIP) converter configured to configure MIP image data including at least one image frame corresponding to a projection position of the brain lesion image, a noise remover configured to remove noise of brain lesion information and to configure corrected MIP image data, from which the noise is removed, and an MRA reconfiguration unit configured to reconfigure a corrected brain lesion image by back-projecting the corrected MIP image data.

Abstract: A reference voltage generator includes a mirroring circuit generating a first sub-voltage and a second sub-voltage that are constant, a first voltage generator including a first switch generating a first voltage based on the first sub-voltage, and a second voltage generator including a second switch generating a second voltage that is lower than the first voltage based on the second sub-voltage, wherein the second switch has a threshold voltage that is lower than the first switch to keep a voltage difference between the first voltage and the second voltage as a first reference voltage.

Abstract: Provided herein are a voltage regulator, a memory system having the same and an operation method thereof. The memory system includes a memory device configured to store data, a controller configured to control the memory device, and a voltage regulator configured to supply a pump-out voltage to the memory device or the controller so that the memory device or the controller is operated in the following manner: until a level of the pump-out voltage is increased to a second reference voltage lower than a first reference voltage, the pump-out voltage is output using a clock having a first frequency; when the pump-out voltage exceeds the second reference voltage and does not exceed the first reference voltage, the pump-out voltage is output using a clock having a second frequency lower than the first frequency; and when the pump-out voltage exceeds the first reference voltage, the pump-out voltage is output using the clock having the first frequency.

Abstract: Provided herein are a voltage regulator, a memory system having the same and an operation method thereof. The memory system includes a memory device configured to store data, a controller configured to control the memory device, and a voltage regulator configured to supply a pump-out voltage to the memory device or the controller so that the memory device or the controller is operated in the following manner: until a level of the pump-out voltage is increased to a second reference voltage lower than a first reference voltage, the pump-out voltage is output using a clock having a first frequency; when the pump-out voltage exceeds the second reference voltage and does not exceed the first reference voltage, the pump-out voltage is output using a clock having a second frequency lower than the first frequency; and when the pump-out voltage exceeds the first reference voltage, the pump-out voltage is output using the clock having the first frequency.

Abstract: Provided herein are a voltage regulator, a memory system having the same and an operation method thereof. The memory system includes a memory device configured to store data, a controller configured to control the memory device, and a voltage regulator configured to supply a pump-out voltage to the memory device or the controller so that the memory device or the controller is operated in the following manner: until a level of the pump-out voltage is increased to a second reference voltage lower than a first reference voltage, the pump-out voltage is output using a clock having a first frequency; when the pump-out voltage exceeds the second reference voltage and does not exceed the first reference voltage, the pump-out voltage is output using a clock having a second frequency lower than the first frequency; and when the pump-out voltage exceeds the first reference voltage, the pump-out voltage is output using the clock having the first frequency.

Abstract: Provided herein are a voltage regulator, a memory system having the same and an operation method thereof. The memory system includes a memory device configured to store data, a controller configured to control the memory device, and a voltage regulator configured to supply a pump-out voltage to the memory device or the controller so that the memory device or the controller is operated in the following manner: until a level of the pump-out voltage is increased to a second reference voltage lower than a first reference voltage, the pump-out voltage is output using a clock having a first frequency; when the pump-out voltage exceeds the second reference voltage and does not exceed the first reference voltage, the pump-out voltage is output using a clock having a second frequency lower than the first frequency; and when the pump-out voltage exceeds the first reference voltage, the pump-out voltage is output using the clock having the first frequency.

Abstract: A reference voltage generator includes a mirroring circuit generating a first sub-voltage and a second sub-voltage that are constant, a first voltage generator including a first switch generating a first voltage based on the first sub-voltage, and a second voltage generator including a second switch generating a second voltage that is lower than the first voltage based on the second sub-voltage, wherein the second switch has a threshold voltage that is lower than the first switch to keep a voltage difference between the first voltage and the second voltage as a first reference voltage.