Abstract: A semiconductor memory device comprises a substrate including a first source/drain region and a second source/drain region, a trench between the first source/drain region and the second source/drain region and formed in the substrate, a cell gate insulating layer on sidewalls and a bottom surface of the trench, a cell gate electrode on the cell gate insulating layer, a work function control pattern on the cell gate electrode, including N-type impurities and a cell gate capping pattern on the work function control pattern. The work function control pattern includes a semiconductor material. The work function control pattern includes a first region and a second region between the first region and the cell gate electrode. A concentration of the N-type impurities in the first region is greater than a concentration of the N-type impurities in the second region.

Abstract: The present invention relates to a feed additive composition having a high content of L-methionine, and an animal feed composition comprising the feed additive composition. More specifically, the present invention relates to a feed additive composition comprising 60 to 99.9 wt % of L-methionine together with L-phenylalanine and L-tyrosine, and to an animal feed composition comprising the feed additive composition.